RF2162PCBA

Preliminary RF2162 3V 900MHZ LINEAR AMPLIFIER 2 Typical Applications • 3V CDMA/AMPS Cellular Handsets • 3V JCDMA/TACS Cellular Handsets • 3V TDMA/AMPS Cellular Handsets • Spread-Spectrum Systems • CDPD Portable Data Cards • Portable Battery-Powered Equipment 2 POWER AMPLIFIERS Product Description 3.75 2 0.45 0.28 0.75 0.50 0.80 TYP 1 1 The RF2162 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CDMA/AMPS hand-held digital cellular equipment, spread-spectrum systems, and other applications in the 800MHz to 960MHz band. The RF2162 has an analog bias control voltage to maximize efficiency. The device is self-contained with 50 Ω input and the output can be easily matched to obtain optimum power, efficiency, and linearity characteristics. The device is packaged in a compact 4mmx4mm, 16-pin, leadless chip carrier. 3.75 + 1.60 4.00 12° 1.50 SQ INDEX AREA 3 3.20 4.00 1.00 0.90 0.75 0.65 NOTES: 1 Shaded Pin is Lead 1. 2 Dimension applies to plated terminal and is measured between 0.10 mm and 0.25 mm from terminal tip. 0.05 0.00 Dimensions in mm. The terminal #1 identifier and terminal numbering convention 3 shall conform to JESD 95-1 SPP-012. Details of terminal #1 identifier are optional, but must be located within the zone indicated. The identifier may be either a mold or marked feature. 4 5 Pins 1 and 9 are fused. Package Warpage: 0.05 max. Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ü Package Style: LCC, 16-Pin, 4x4 GaAs HBT SiGe HBT VCC BIAS GaAs MESFET Si CMOS Features • Single 3V Supply • 29dBm Linear Output Power • 29dB Linear Gain • 35% Linear Efficiency • On-board Power Down Mode • 800MHz to 960MHz Operation VCC1 VCC1 GND 1 GND GND RFIN 2 3 4 5 VREG1 16 15 14 13 12 11 10 RF OUT RF OUT RF OUT 6 VMODE 7 VREG2 8 BIAS GND 9 GND 2F0 Ordering Information RF2162 RF2162 PCBA 3V 900MHz Linear Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A17 011011 2-205 RF2162 Absolute Maximum Ratings Parameter Supply Voltage (RF off) Supply Voltage (POUT ≤ 31dBm) Mode Voltage (VMODE) Preliminary Rating +8.0 +4.5 +3.0 Unit VDC VDC VDC VDC dBm °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). 2 POWER AMPLIFIERS Control Voltage (VPD) Input RF Power Operating Case Temperature Storage Temperature Moisture Sensitivity +3.0 +12 -30 to +110 -30 to +150 Modified JEDEC Level 2 Parameter Overall Usable Frequency Range Typical Frequency Range Linear Gain Second Harmonic (including second harmonic trap) Max CW Output Power Total Efficiency (AMPS mode) Maximum Linear Output Power (CDMA Modulation) Total Linear Efficiency Adjacent Channel Power Rejection Noise Power Maximum Linear Output Power (CDMA Modulation) Total Efficiency (AMPS mode) Max CW Output Power Total Linear Efficiency Adjacent Channel Power Rejection Input VSWR Output Load VSWR Specification Min. Typ. Max. 800 28 824-849 29 -30 31.5 50 29 30 35 -46 -58 -90 29 50 30.5 36 -46 -58