RF2163

Preliminary 2 Typical Applications • 2.5GHz ISM Band Applications • PCS Communication Systems • Wireless LAN Systems RF2163 3V, 2.5GHZ LINEAR POWER AMPLIFIER • Commercial and Consumer Systems • Portable Battery Powered Equipment • Broadband Spread-Spectrum Systems 2 POWER AMPLIFIERS Product Description 2 1 0.80 TYP 1 The RF2163 is a linear, medium power, high efficiency amplifier IC designed specifically for low voltage operation. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz spread-spectrum transmitters. The device is provided in a 16-pin leadless chip carrier with a backside ground and is self-contained with the exception of the output matching network and power supply feed line. 3.75 0.75 0.50 0.45 0.28 3.75 + 1.60 4.00 12° 1.50 SQ INDEX AREA 3 3.20 4.00 0.75 0.65 1.00 0.90 NOTES: 1 Shaded Pin is Lead 1. 2 Dimension applies to plated terminal and is measured between 0.10 mm and 0.25 mm from terminal tip. 0.05 0.00 Dimensions in mm. The terminal #1 identifier and terminal numbering convention 3 shall conform to JESD 95-1 SPP-012. Details of terminal #1 identifier are optional, but must be located within the zone indicated. The identifier may be either a mold or marked feature. 4 5 Pins 1 and 9 are fused. Package Warpage: 0.05 max. Optimum Technology Matching® Applied Si BJT Si Bi-CMOS GND ! Package Style: LCC, 16-Pin GaAs HBT SiGe HBT VCC1 VCC1 GaAs MESFET Si CMOS Features • Single 3.3V Power Supply • +30dBm Saturated Output Power • 19dB Small Signal Gain VCC 1 RF IN BIAS GND2 PWR SEN 2 3 4 5 PWR REG 16 15 14 13 12 11 RF OUT RF OUT RF OUT NC • High Power Added Efficiency • Patent Pending Power Sense Technology • 1800MHz to 2500MHz Frequency Range Bias 10 8 BIAS GND 1 9 GND 6 VREG1 7 VREG2 Ordering Information RF2163 RF2163 PCBA 3V, 2.5GHz Linear Power Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A2 001221 2-249 RF2163 Absolute Maximum Ratings Parameter Supply Voltage Power Control Voltage (VPC) DC Supply Current Input RF Power Operating Ambient Temperature Storage Temperature Moisture sensitivity Preliminary Rating -0.5 to +6.0 -0.5 to 3.3 1000 +15 -40 to +85 -40 to +150 JEDEC Level 3 Unit VDC V mA dBm °C °C Refer to “Handling of PSOP and PSSOP Products” on page 16-15 for special handling information. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). 2 POWER AMPLIFIERS Parameter Overall Frequency Range Maximum Saturated Output Power Efficiency at Max Output Power Maximum Linear Output Power Linear Efficiency Small Signal Gain Reverse Isolation Second Harmonic Adjacent Channel Power Isolation Input Impedance Input VSWR Specification Min. Typ. Max. 1800 to 2500 +30 37 25 25 19 30 30 -35 -35 -52 TBD 50 2:1 2.4 0 0.5 Unit Condition T=25 °C, VCC =3.5V, VPC =2.4V, Freq=2450MHz +29 +32 MHz dBm % dBm % dB dB dB dBc dBc dBm Ω PIN =+13dBm With 802.11 modulation (11Mbit/s) and meeting 802.11 spectral mask. 17 In “ON” state In “OFF” state Including second harmonic trap, see application circuit POUT =25dBm POUT =25dBm In “OFF” state, PIN =TBD Power Down VREG “ON” VREG “OFF” V V Voltage supplied to control input; device is “ON” Voltage supplied to control input; device is “OFF” Power Supply Operating Voltage Current Consumption 3.0 to 5.0 650 350 150 V mA mA mA Power Down “ON”, at max output power Power Down “ON”, POUT =25dBm Idle current 2-250 Rev A2 001221 Preliminary Pin 1 2 3 4 Function GND RF IN BIAS GND2 PWR SEN Description Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. RF input. This input is AC coupled, so an external blocking capacitor is not required if this pin is connected to a DC path. Ground for second stage bias circuit. For best performance, keep traces physically short and connect immediately to ground plane. The PWR SEN and PWR REF pins can be used in conjunction with an external feedback path to provide an RF power control function for the RF2163. The power control function is based on sampling the RF drive to the final stage of the RF2163. Same as pin 4. This pin requires a regulated supply to maintain the correct bias current. Same as pin 6. Ground for first stage bias circuit. For best performance connect to ground with a 10nH inductor. Same as pin 1. RF2163 Interface Schematic See pin 14. 2 POWER AMPLIFIERS RF OUT 5 6 7 8 9 10 PWR REF VREG1 VREG2 BIAS GND1 GND RF OUT 11 12 13 14 RF OUT RF OUT NC VCC1 RF output and bias for the output stage. The power supply for the output transistor needs to be supplied to this pin. This can be done through a quarter-wave length microstrip line that is RF grounded at the other end, or through an RF inductor that supports the required DC currents. Same as pin 10. See pin 10. Same as pin 10. Not connected. Power supply pin for the bias circuits. External low frequency bypass capacitors should be connected if no other low frequency decoupling is nearby. RF IN See pin 10. VCC BIAS 15 16 Pkg Base VCC1 VCC GND Same as pin 14. Same as pin 14. Ground connection. The backside of the package should be connected to the ground plane through a short path, i.e., vias under the device may be required. See pin 14. See pin 14. See pin 1 and 2. Rev A2 001221 2-251 RF2163 Application Schematic 2400MHz to 2483MHz Preliminary VCC 10 uF Part is Backside Grounded. 2 POWER AMPLIFIERS 1000 pF 1 1.5 pF RF IN 1.5 nH 3 4 5 390 Ω 1000 pF 6 Bias 2 16 15 14 1000 pF 1000 pF 6.2 pF 10 pF 13 12 3.0 pF 11 TL1 3.0 pF 10 15 nH 10 pF RF OUT TL2 1.5 pF 7 8 9 VREG1 = 2.4 V VREG2 = 2.4 V VCC = 3.5 V 10 nH 390 Ω 1000 pF 1000 pF 10 uF 10 uF WLAN 25 mil 1000 pF 1000 pF Transmission Line Length TL1 TL2 PWR SEN PWR REF 175 mil VREG1 VREG2 2-252 Rev A2 001221 Preliminary Evaluation Board Schematic 2400MHz to 2483MHz (Download Bill of Materials from www.rfmd.com.) P2-4 RF2163 Part is Backside Grounded. C11 6.2 pF C5 3.0 pF L1 15 nH C10 1000 pF C9 10 pF J1 RF IN 50 Ω µstrip C1 1.5 pF L3 1.5 nH 1 2 3 4 5 16 15 14 13 12 11 C8 10 pF TL1 TL2 C7 1.5 pF 50 Ω µstrip J2 RF OUT Bias 10 8 9 C6 3.0 pF L2 10 nH 6 7 C2 1000 pF R2 390 Ω R1 390 Ω 2163400- VREG1 = 2.4 V VREG2 = 2.4 V VCC = 3.5 V C15 1000 pF C3 1000 pF C21 10 uF C13 1000 pF C20 10 uF P1 P1-1 1 2 P1-3 3 PS REF GND PWR SENSE P2-4 P2-1 P2-2 P2 1 2 3 4 VREG2 VREG1 GND VCC P1-3 P1-1 C16 1000 pF P2-2 P2-1 Transmission Line Length WLAN TL1 25 mil TL2 175 mil Rev A2 001221 2-253 POWER AMPLIFIERS C4 1000 pF C12 1000 pF C22 10 uF 2 RF2163 Evaluation Board Layout Board Size 2.0” x 2.0” Board Thickness 0.028”, Board Material FR-4 Preliminary 2 POWER AMPLIFIERS 2-254 Rev A2 001221