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RF2172PCBA410

RF2172PCBA410

  • 厂商:

    RFMD(威讯)

  • 封装:

  • 描述:

    RF2172PCBA410 - ISM BAND 3.6V, 250mW AMP WITH ANALOG GAIN CONTROL - RF Micro Devices

  • 数据手册
  • 价格&库存
RF2172PCBA410 数据手册
RF2172 0 Typical Applications • BluetoothTM PA • 2.4GHz to 2.5GHz ISM Band Systems • 902MHz to 928MHz ISM Band Systems Product Description The RF2172 is a medium-power high efficiency amplifier IC targeting 3.6V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz Bluetooth applications and frequency hopping/direct sequence spread-spectrum cordless telephones or other applications in the 902MHz to 928MHz ISM band. The device is packaged in a compact 4mmx4mm QFN. The device features analog gain control to optimize transmit power while maximizing battery life in portable equipment requiring up to 100mW transmit power at the antenna port. BLUETOOTH is a trademark owned by the Bluetooth SIG, Inc., and licensed to RF Micro Devices, Inc. 0.10 C B -B- ISM BAND 3.6V, 250mW AMP WITH ANALOG GAIN CONTROL • 3.6V Spread-Spectrum Cordless Phones • Portable Battery-Powered Equipment • Spread-Spectrum Systems 4.00 0.10 C B 2 PLCS 3.75 2 PLCS 2.00 0.80 TYP 2 A 1.60 2 PLCS 3.75 0.75 0.50 INDEX AREA Dimensions in mm. 1.50 SQ. 4.00 0.10 C A 2 PLCS 0.45 0.28 3.20 2 PLCS 2.00 0.10 C A 2 PLCS Shaded pin is lead 1. 12° MAX 0.05 0.00 0.10 M C A B 1.00 0.90 0.75 0.65 C 0.05 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS Package Style: QFN, 16-Pin, 4x4 Features • 23.5dBm Typical Output Power • 0dB to 28dB Variable Gain • 45% Efficiency at Max Output • On-Board Power Down Mode • 2.4GHz to 2.5GHz Operation • 902MHz to 928MHz Operation GND GND GND 14 1 GND 2 RF IN 3 GND 4 5 GND 16 15 13 12 RF OUT 11 RF OUT Bias 6 VPD 7 APC 8 GND GND 10 GND 9 GND VCC Ordering Information RF2172 ISM Band 3.6V, 250mW Amp with Analog Gain Control RF2172PCBA411 Fully Assembled Evaluation Board 2.4 to 2.5GHz RF2172PCBA410 Fully Assembled Evaluation Board 908 to 928MHz RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Functional Block Diagram Rev A11 030729 2-1 RF2172 Absolute Maximum Ratings Parameter Supply Voltage (RF off) APC Current (Maximum) Control Voltage (VPD) Input RF Power Operating Case Temperature Storage Temperature Rating -0.5 to +6.0 +10 -0.5 to +6.0 +10 -40 to +85 -55 to +155 Unit VDC mA VDC dBm °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter Overall Usable Frequency Range Input Impedance Input VSWR Output Load VSWR Specification Min. Typ. Max. 500 to 2500 50 1.8:1
RF2172PCBA410 价格&库存

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