RF2173

RF2173 2 Typical Applications • 3V GSM Cellular Handsets • 3V Dual-Band/Triple-Band Handsets • GPRS Compatible • Commercial and Consumer Systems • Portable Battery-Powered Equipment 3V GSM POWER AMPLIFIER 2 POWER AMPLIFIERS Product Description The RF2173 is a high power, high efficiency power amplifier module offering high performance in GSM or GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM hand-held digital cellular equipment and other applications in the 800MHz to 950MHz band. On-board power control provides over 70dB of control range with an analog voltage input, and provides power down with a logic "low" for standby operation. The device is self-contained with 50 Ω input and the output can be easily matched to obtain optimum power and efficiency characteristics. The RF2173 can be used together with the RF2174 for dual-band operation. The device is packaged in an ultra-small plastic package, minimizing the required board space. Optimum Technology Matching® Applied Si BJT Si Bi-CMOS 2 3.75 0.75 0.50 0.45 0.28 0.80 TYP 1 1 3.75 + 1.60 4.00 12° 1.50 SQ INDEX AREA 3 3.20 4.00 1.00 0.90 0.75 0.65 NOTES: 1 Shaded Pin is Lead 1. 2 Dimension applies to plated terminal and is measured between 0.10 mm and 0.25 mm from terminal tip. 0.05 0.00 Dimensions in mm. The terminal #1 identifier and terminal numbering convention 3 shall conform to JESD 95-1 SPP-012. Details of terminal #1 identifier are optional, but must be located within the zone indicated. The identifier may be either a mold or marked feature. 4 5 Pins 1 and 9 are fused. Package Warpage: 0.05 max. ü Package Style: LCC, 16-Pin, 4x4 GaAs HBT SiGe HBT GaAs MESFET Si CMOS Features • Single 2.7V to 4.8V Supply Voltage • +36dBm Output Power at 3.5V • 32dB Gain with Analog Gain Control • 56% Efficiency VCC2 VCC2 GND 1 GND2 RF IN GND1 2 3 4 5 VCC1 16 15 14 13 12 11 10 RF OUT 2F0 NC • 800MHz to 950MHz Operation RF OUT RF OUT • Supports GSM and E-GSM 6 APC1 7 APC2 8 VCC 9 GND Ordering Information RF2173 RF2173 PCBA 3V GSM Power Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A4 010914 2-221 RF2173 Absolute Maximum Ratings Parameter Supply Voltage Power Control Voltage (VAPC1,2) DC Supply Current Input RF Power Duty Cycle at Max Power Output Load VSWR Operating Case Temperature Storage Temperature Rating -0.5 to +6.0 -0.5 to +3.0 2400 +13 50 10:1 -40 to +85 -55 to +150 Unit VDC V mA dBm % °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). 2 POWER AMPLIFIERS Parameter Overall Operating Frequency Range Usable Frequency Range Maximum Output Power Specification Min. Typ. Max. Unit Condition Temp=25°C, VCC =3.5V, VAPC1,2 =2.6V, PIN =+6dBm, Freq=880MHz to 915MHz, 25% Duty Cycle, pulse width=1154 µs See evaluation board schematic. Temp=25°C, VCC =3.5V, VAPC1,2 =2.6V Temp=+25°C, VCC =3.2V, VAPC1,2 =2.6V Temp=+85°C, VCC =3.2V, VAPC1,2 =2.6V Temp=25°C, VCC =2.7V, VAPC1,2 =2.6V Temp=+85°C, VCC =2.7V, VAPC1,2 =2.6V At POUT,MAX, VCC =3.2V At POUT,MAX, VCC =3.0V POUT =+20dBm POUT =+10dBm RBW=100kHz, 925MHz to 935MHz, POUT,MIN