RF2174

RF2174 0 RoHS Compliant & Pb-Free Product Typical Applications • 3V DCS1800 (PCN) Cellular Handsets • 3V DCS1900 (PCS) Cellular Handsets • 3V Dual-Band/Triple-Band Handsets Product Description The RF2174 is a high power, high efficiency power amplifier module offering high performance in GSM or GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in DCS1800/1900 hand-held digital cellular equipment and other applications in the 1700MHz to 2000MHz band. On-board power control provides over 65dB of control range with an analog voltage input, and provides power down with a logic “low” for standby operation. The device is self-contained with 50 Ω input and the output can be easily matched to obtain optimum power and efficiency characteristics. The RF2174 can be used together with the RF2173 for dual-band operation. The device is packaged in an ultra-small plastic package, minimizing the required board space. Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS 0.10 C B -B- 3V DCS POWER AMPLIFIER • Commercial and Consumer Systems • Portable Battery-Powered Equipment • GPRS Compatible 4.00 0.10 C B 2 PLCS 3.75 2 PLCS 2.00 0.80 TYP 2 A 1.60 2 PLCS 3.75 0.75 0.50 INDEX AREA Dimensions in mm. 1.50 SQ. 4.00 0.10 C A 2 PLCS 0.45 0.28 3.20 2 PLCS 2.00 0.10 C A 2 PLCS Shaded pin is lead 1. 12° MAX 0.05 0.00 0.10 M C A B 1.00 0.90 0.75 0.65 C 0.05 Package Style: QFN, 16-Pin, 4x4 Features • Single 2.7V to 4.8V Supply Voltage • +33dBm Output Power at 3.5V VCC2 VCC2 VCC2 GND 2F0 • 27dB Gain with Analog Gain Control • 51% Efficiency • 1700MHz to 1950MHz Operation • Supports DCS1800 and PCS1900 1 AT_EN 2 RF IN 3 GND1 4 5 VCC1 16 15 14 13 12 RF OUT 11 RF OUT 10 RF OUT Ordering Information RF2174 3V DCS Power Amplifier RF2174PCBA-41X Fully Assembled Evaluation Board 6 APC1 7 APC2 8 VCC 9 GND Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A8 060918 2-275 RF2174 Absolute Maximum Ratings Parameter Supply Voltage Power Control Voltage (VAPC) Enable Voltage (VAT_EN) DC Supply Current Input RF Power Duty Cycle at Max Power Output Load VSWR Operating Case Temperature Storage Temperature Rating -0.5 to +6.0 -0.5 to +3.0 -0.5 to +3.0 1500 +13 50 10:1 -40 to +85 -55 to +150 Unit VDC V V mA dBm % °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. RoHS marking based on EUDirective2002/95/EC (at time of this printing). However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter Overall Operating Frequency Range Usable Frequency Range Maximum Output Power Specification Min. Typ. Max. Unit Condition Temp=25 °C, VCC =3.2V, VAPC =2.7V, PIN =+6dBm, Freq=1710MHz to 1910MHz, 25% Duty Cycle, pulse width=1154 μs See application schematic for tuning details. A different tuning is required. Temp=25 °C, VCC =3.5V, VAPC =2.7V Temp=+25 °C, VCC =3.2V, VAPC =2.7V Temp=+85 °C, VCC =3.2V, VAPC =2.7V Temp=25 °C, VCC =2.7V, VAPC =2.7V Temp=+85 °C, VCC =2.7V, VAPC =2.7V At POUT,MAX, VCC =3.2V, Freq=1710MHz to 1785MHz At POUT,MAX, VCC =3.2V, Freq=1850MHz to 1910MHz POUT =+20dBm POUT =+10dBm +32 +31.5 Total Efficiency +29.5 45 42 1710 to 1785 1850 to 1910 1700 to 2000 +33 +32.8 +31.5 +31 +30 51 51 15 10 +7 MHz MHz MHz dBm dBm dBm dBm dBm % % % % dBm dBm Recommended Input Power Range Output Noise Power +5 +9 -79 Forward Isolation -37 -37 -40 -60 -65 -30 -30 -35 -45 -50 -36 dBm dBm dBm dBc dBc dBm Ω Second Harmonic Third Harmonic All Other Non-Harmonic Spurious Input Impedance Input VSWR Output Load VSWR Output Load Impedance 10:1 RBW=100kHz, 1805MHz to 1880MHz and 1930MHz to 1990MHz, POUT,MIN