RF2175

Preliminary RF2175 3V 400MHZ LINEAR AMPLIFIER 2 Typical Applications • 3V TETRA Cellular Handsets • 3V CDMA Cellular Handsets • Portable Battery-Powered Equipment 2 POWER AMPLIFIERS EXPOSED HEATSINK Product Description The RF2175 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in TETRA hand-held digital cellular equipment, spread-spectrum systems, and other applications in the 380MHz to 512MHz band. The RF2175 has an analog bias control voltage to maximize efficiency. The device is self-contained with 50 Ω input, and the output can be easily matched to obtain optimum power, efficiency, and linearity characteristics. The package is a small SSOP-16 plastic with backside ground. -A0.154 0.012 0.008 0.004 0.002 Note 3 Exposed Heat Sink 0.196 0.189 0.025 0.123 0.107 0.237 0.063 0.057 0.087 0.071 8° MAX 0° MIN NOTES: 1. Shaded lead in Pin 1. 2. Lead coplanarity - 0.003 with respect to datum "A". 3. Lead standoff is specified from the lowest point on the package underside. 0.035 0.016 0.010 0.007 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ü Package Style: SSOP-16 Slug GaAs HBT SiGe HBT GaAs MESFET Si CMOS Features • Single 3V Supply • 31.8dBm Linear Output Power • 37.5dB Linear Gain • 30% Linear Efficiency • On-Board Power Down Mode • 380MHz to 512MHz Operation VCC LTUNE NC Q1C GND1 RF IN 1 2 3 4 5 6 7 Bias 16 15 14 13 12 11 10 9 VBIAS RF OUT RF OUT RF OUT Ordering Information RF2175 RF2175 PCBA 3V 400MHz Linear Amplifier Fully Assembled Evaluation Board VREG 8 Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A6 010718 2-243 RF2175 Absolute Maximum Ratings Parameter Supply Voltage (RF Off) Supply Voltage (RF Applied) Mode Voltage (VBIAS) Preliminary Rating +8.0 +4.5 +5.0 +5.0 +5 6:1 20:1 -30 to +100 -40 to +120 JEDEC Level 5 * Unit VDC VDC VDC VDC dBm Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). 2 POWER AMPLIFIERS Control Voltage (VREG) Input RF Power (Avg.) Output VSWR - Inband Output VSWR - Out of Band Operating Ambient Temperature Storage Temperature Moisture Sensitivity °C °C Parameter Overall Usable Frequency Range Typical Frequency Range Linear Gain Harmonic P3dB Output Power Linear Output Power (TETRA Modulation) Total Linear Efficiency Adjacent Channel Power Rejection Specification Min. Typ. Max. Unit Condition T=25°C, VCC =3.6V, Freq=410MHz to 420MHz unless otherwise specified, 25% duty cycle. POUT =31.8dBm 380 35.0 34 31.8 25 -35 -45 30 410 to 420 37.5 512 39.0 -30 MHz MHz dB dBc dBm dBm % dBc dBc ACPR @25kHz, TETRA modulation ACPR @50kHz, TETRA modulation Power Supply Power Supply Voltage Idle Current VCC Current VREG Current VBIAS Current Turn On/Off Time 3.0 3.6 230 4.5 300 1650 13 3