Preliminary
RF2189
3V, 2.5GHZ LINEAR POWER AMPLIFIER
2
Typical Applications
• 2.5GHz ISM Band Applications • PCS Communication Systems • Wireless LAN Systems
• Commercial and Consumer Systems • Portable Battery-Powered Equipment • Broadband Spread-Spectrum Systems
2
POWER AMPLIFIERS
Product Description
2 1 0.80 TYP 1
The RF2189 is a linear, medium-power, high-efficiency amplifier IC designed specifically for low voltage operation. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz spread-spectrum transmitters. The device is provided in a 16-pin leadless chip carrier with a backside ground and is self-contained with the exception of the output matching network and power supply feed line.
3.75 0.75 0.50
0.45 0.28
3.75
+
1.60 4.00
12° 1.50 SQ INDEX AREA 3 3.20 4.00 1.00 0.90
0.75 0.65
NOTES:
1 Shaded Pin is Lead 1. 2 Dimension applies to plated terminal and is measured between 0.10 mm and 0.25 mm from terminal tip.
0.05 0.00
Dimensions in mm.
The terminal #1 identifier and terminal numbering convention 3 shall conform to JESD 95-1 SPP-012. Details of terminal #1 identifier are optional, but must be located within the zone indicated. The identifier may be either a mold or marked feature. 4 5 Pins 1 and 9 are fused. Package Warpage: 0.05 max.
Optimum Technology Matching® Applied
Si BJT Si Bi-CMOS
ü
Package Style: LCC, 16-Pin, 4x4
GaAs HBT SiGe HBT
GaAs MESFET Si CMOS
Features
• Single 3.3V Power Supply • +25dBm Saturated Output Power • 20dB Small Signal Gain • High Power Added Efficiency
VCC2
VCC2
VCC1 14
GND
1 GND GND NC 2 3 4 5 NC
16
15
13 12 11 10 RF OUT
Bias Circuits
NC
• Power Down Mode
RF OUT NC
• 1800MHz to 2500MHz Frequency Range
6 RF IN
7 NC
8 VPC
9 GND
Ordering Information
RF2189 RF2189 PCBA 3V, 2.5GHz Linear Power Amplifier Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA
Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com
Rev A4 010424
2-249
RF2189
Absolute Maximum Ratings Parameter
Supply Voltage Power Control Voltage (VPC) DC Supply Current Input RF Power Operating Ambient Temperature Storage Temperature Moisture sensitivity
Preliminary
Refer to “Handling of PSOP and PSSOP Products” on page 16-15 for special handling information.
Rating
-0.5 to +6.0 -0.5 to 3.3 350 +12 -40 to +85 -40 to +150 JEDEC Level 3
Unit
VDC V mA dBm °C °C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
2
POWER AMPLIFIERS
Parameter
Overall
Frequency Range Maximum Saturated Output Power Efficiency at Max Output Power Small Signal Gain Reverse Isolation Second Harmonic IM3 IM5 IM7 Isolation Input Impedance Input VSWR Noise Figure
Specification Min. Typ. Max.
1800 to 2500 +24 42 20 30 30 -50 -30 -35 -48 -30 50 2:1 7 -23 -30 -35
Unit
Condition
T=25 °C, VCC =3.3V, VPC =3.0V, PIN =0dBm, Freq=2450MHz
+23
+26
MHz dBm % dB dB dB dBc dBm dBm dBm dBm Ω dB
PIN =+6dBm
19
-20
In “ON” state In “OFF” state Including second harmonic trap, see application circuit POUT =+17dBm in each tone POUT =+17dBm in each tone POUT =+17dBm in each tone In “OFF” state, PIN =0dBm
Power Down
Power Control “ON” Power Control “OFF” PC Input Impedance 5 3.0 to 5.0 260 150 100
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