RF2192

Preliminary 2 Typical Applications • 3V CDMA/AMPS Cellular Handsets • 3V JCDMA Cellular Handsets • 3V CDMA2000 Cellular Handsets RF2192 3V 900MHZ LINEAR POWER AMPLIFIER • 3V TDMA/GAIT Cellular Handsets • Spread-Spectrum Systems • Portable Battery-Powered Equipment 2 POWER AMPLIFIERS Product Description 3.75 2 0.45 0.28 0.75 0.50 0.80 TYP 1 1 The RF2192 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CDMA/AMPS and CDMA2000 handheld digital cellular equipment, spread-spectrum systems, and other applications in the 800MHz to 960MHz band. The RF2192 has a low power mode to extend battery life under low output power conditions. The device is packaged in a 16 pin, 4mmx4mm leadless chip carrier. 3.75 + 1.60 4.00 12° 1.50 SQ 3 INDEX AREA 3.20 4.00 1.00 0.90 0.75 0.65 NOTES: 1 Shaded Pin is Lead 1. 2 Dimension applies to plated terminal and is measured 0.10 mm and 0.25 mm from terminal tip. 0.05 0.00 Dimensions in mm. The terminal #1 identifier and terminal numbering conv 3 shall conform to JESD 95-1 SPP-012. Details of termin identifier are optional, but must be located within the z indicated. The identifier may be either a mold or marke feature. 4 5 Pins 1 and 9 are fused. Package Warpage: 0.05 max. Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ü Package Style: LCC, 16-Pin, 4x4 GaAs HBT SiGe HBT VCC BIAS GaAs MESFET Si CMOS Features • Single 3V Supply • 29dBm Linear Output Power • 37% Linear Efficiency • Low Power Mode • 45 mA idle current • 47% Peak Efficiency 31dBm Output VCC1 VCC1 GND 1 GND 2 GND 3 RF IN 4 5 VREG1 16 15 14 13 12 RF OUT 11 RF OUT 10 RF OUT 6 VMODE 7 VREG2 8 BIAS GND 9 GND 2F0 Ordering Information RF2192 RF2192 PCBA 3V 900MHz Linear Power Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A1 010830 2-203 RF2192 Absolute Maximum Ratings Parameter Supply Voltage (RF off) Supply Voltage (POUT ≤ 31dBm) Mode Voltage (VMODE) Preliminary Rating +8.0 +5.2 +4.2 Unit VDC VDC VDC Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). 2 POWER AMPLIFIERS Control Voltage (VREG) Input RF Power Operating Case Temperature Storage Temperature Moisture Sensitivity +3.0 VDC +10 dBm -30 to +110 °C -30 to +150 °C Modified JEDEC Level 2 Parameter High Power State (VMODE Low) Frequency Range Linear Gain Second Harmonic Third Harmonic Maximum Linear Output Power (CDMA Modulation) Total Linear Efficiency Adjacent Channel Power Rejection Input VSWR Output VSWR Noise Power Specification Min. Typ. Max. Unit Condition Case T=25°C, VCC =3.4V, VREG = 2.85V, VMODE =0V to 0.5V, Freq=824MHz to 849MHz (unless otherwise specified) 824 27 849 30 -33 -70dBc At 45MHz offset Case T=25 °C, VCC =3.4V, VREG =2.85V, VMODE =1.8V to 3V, Freq=824MHz to 849MHz (unless otherwise specified) -44 -56 10:1 6:1 -133 dBm/Hz Low Power State (VMODE High) Frequency Range Linear Gain Second Harmonic Third Harmonic Maximum Linear Output Power (CDMA Modulation) Max ICC Adjacent Channel Power Rejection Input VSWR Output VSWR 824 19 849 22 -33