RF2192PCBA-41X

RF2192 0 Typical Applications • 3V CDMA/AMPS Cellular Handsets • 3V JCDMA Cellular Handsets • 3V CDMA2000 Cellular Handsets Product Description The RF2192 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CDMA/AMPS and CDMA2000 handheld digital cellular equipment, spread-spectrum systems, and other applications in the 800MHz to 960MHz band. The RF2192 has a low power mode to extend battery life under low output power conditions. The device is packaged in a 16-pin, 4mmx4mm QFN. 0.10 C B -B- 3V 900MHz LINEAR POWER AMPLIFIER RoHS Compliant & Pb-Free Product • 3V TDMA/GAIT Cellular Handsets • 3V CDMA 450MHz Band Handsets • Portable Battery-Powered Equipment 4.00 0.10 C B 2 PLCS 3.75 2 PLCS 2.00 0.80 TYP 2 A 1.60 2 PLCS 3.75 0.75 0.50 INDEX AREA Dimensions in mm. 1.50 SQ. 4.00 0.10 C A 2 PLCS 0.45 0.28 3.20 2 PLCS 2.00 0.10 C A 2 PLCS Shaded pin is lead 1. 12° MAX 0.05 0.00 0.10 M C A B 1.00 0.90 0.75 0.65 C 0.05 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS Package Style: QFN, 16-Pin, 4x4 Features • Single 3V Supply • 29dBm Linear Output Power VCC BIAS VCC1 VCC1 • 37% Linear Efficiency 2F0 GND • Low Power Mode • 45 mA idle current • 47% Peak Efficiency 31dBm Output 1 GND 2 GND 3 RF IN 4 5 VREG1 16 15 14 13 12 RF OUT 11 RF OUT 10 RF OUT Ordering Information RF2192 3V 900MHz Linear Power Amplifier RF2192PCBA-41X Fully Assembled Evaluation Board 6 VMODE 7 VREG2 8 BIAS GND 9 GND Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A8 060918 2-327 RF2192 Absolute Maximum Ratings Parameter Supply Voltage (RF off) Supply Voltage (POUT ≤ 31dBm) Mode Voltage (VMODE) Control Voltage (VREG) Input RF Power Operating Case Temperature Storage Temperature Rating +8.0 +5.2 +4.2 +3.0 +10 -30 to +110 -40 to +150 Unit VDC VDC VDC VDC dBm °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. RoHS marking based on EUDirective2002/95/EC (at time of this printing). However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter Usable Frequency Range High Power StateUS-CDMA (VMODE Low) Frequency Range Linear Gain Second Harmonic Third Harmonic Maximum Linear Output Power (CDMA Modulation) Total Linear Efficiency Adjacent Channel Power Rejection Input VSWR Output VSWR Noise Power Specification Min. Typ. Max. 400 960 Unit MHz Condition Case T=25°C, VCC =3.4V, VREG = 2.85V, VMODE =0V to 0.5V, Freq=824MHz to 849MHz (unless otherwise specified) 824 27 849 30 -33 -70dBc At 45MHz offset Case T=25°C, VCC =3.4V, VREG =2.85V, VMODE =1.8V to 3V, Freq=824MHz to 849MHz (unless otherwise specified) -44 -56 10:1 6:1 -133 dBm/Hz Low Power StateUS-CDMA (VMODE High) Frequency Range Linear Gain Second Harmonic Third Harmonic Maximum Linear Output Power (CDMA Modulation) Max ICC Adjacent Channel Power Rejection Input VSWR Output VSWR 824 19 849 22 -33