RF2196PCBA-41X

RF21963V PCS Linear Power Amplifier RF2196 3V PCS LINEAR POWER AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: QFN, 16-Pin, 4 x 4 RF IN GND NC NC 14 8 RF OUT Features Single 3V Supply 29dBm Linear Output Power 35% Linear Efficiency Low Power Mode (Up to 20dBm) 55mA Idle Current VPD1 2 MODE 3 VPD2 4 1 16 15 13 12 VCC1 11 VCC1 10 VCC 5 GND 6 NC 7 RF OUT Applications 3 V CDMA PCS Handsets 3 V CDMA KPCS Handsets 3 V TDMA/GAIT PCS Handsets 3 V CDMA 2000 PCS Handsets Spread-Spectrum Systems Portable Battery-Powered Equipment Functional Block Diagram Product Description The RF2196 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide process, and has been designed for use as the final RF amplifier in 3V CDMA and CDMA2000 handsets as well as other applications in the 1750MHz to 1910MHz band. The RF2196 has a low power mode to extend battery life under low output power conditions. The package is an ultra small 4mmx4mm, 16-pin QFN plastic package with backside ground. Ordering Information RF2196 RF2196PCBA-41X 3V PCS Linear Power Amplifier Fully Assembled Evaluation Board Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Rev A3 DS070730 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. GND NC 9 1 of 12 RF2196 Absolute Maximum Ratings Parameter Supply Voltage (RF off) Supply Voltage (POUT ≤ 31dBm) Mode Voltage (VMODE) Control Voltage (VREG) Input RF Power Operating Case Temperature Storage Temperature Rating +8.0 +5.2 +4.2 +3.0 +10 -30 to +110 -30 to +150 Unit VDC VDC VDC VDC dBm °C °C Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Parameter High Power State (VMODE Low) Frequency Range Linear Gain Second Harmonic Third Harmonic Maximum Linear Output Power (CDMA Modulation) Total Linear Efficiency Adjacent Channel Power Rejection Input VSWR Output VSWR Noise Power Min. Specification Typ. Max. Unit Condition Case T=25°C, VCC =3.4V, VREG =2.85V, VMODE =0V to 0.5V, Freq=1850MHz to 1910MHz (unless otherwise specified) 1850 25 27 -50 -63 29 35 -46 -62 -70dBc dBm/Hz At 80MHz offset. Case T=25°C, VCC =3.4V, VREG =2.85V, VMODE =2V to 3V, Freq=1850MHz to 1910MHz (unless otherwise specified) -44 -56 10:1 6:1 dBc dBc -141 Low Power State (VMODE High) Frequency Range Linear Gain Second Harmonic Third Harmonic Maximum Linear Output Power (CDMA Modulation) Max ICC Adjacent Channel Power Rejection Input VSWR Output VSWR 16 1850 16 20 -45 -60 20 160