RF2196PCBA

Preliminary RF2196 3V PCS LINEAR POWER AMPLIFIER 2 Typical Applications • 3V CDMA PCS Handsets • 3V CDMA KPCS Handsets • 3V TDMA/GAIT PCS Handsets • 3 V CDMA 2000 PCS Handsets • Spread-Spectrum Systems • Portable Battery-Powered Equipment 2 POWER AMPLIFIERS Product Description 3.75 2 0.45 0.28 0.75 0.50 0.80 TYP 1 1 The RF2196 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide process, and has been designed for use as the final RF amplifier in 3V CDMA and CDMA2000 handsets as well as other applications in the 1750MHz to 1910MHz band. The RF2196 has a low power mode to extend battery life under low output power conditions. The package is an ultra small 4mmx4mm leadless plastic package with backside ground. 3.75 + 1.60 4.00 12° 1.50 SQ INDEX AREA 3 3.20 4.00 1.00 0.90 0.75 0.65 NOTES: 1 Shaded Pin is Lead 1. 2 Dimension applies to plated terminal and is measured between 0.10 mm and 0.25 mm from terminal tip. 0.05 0.00 Dimensions in mm. The terminal #1 identifier and terminal numbering convention 3 shall conform to JESD 95-1 SPP-012. Details of terminal #1 identifier are optional, but must be located within the zone indicated. The identifier may be either a mold or marked feature. 4 5 Pins 1 and 9 are fused. Package Warpage: 0.05 max. Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ü GND Package Style: LCC, 16-Pin, 4x4 GaAs HBT SiGe HBT GaAs MESFET Si CMOS Features • Single 3V Supply • 29dBm Linear Output Power • 35% Linear Efficiency • Low Power Mode (Up to 20dBm) • 55mA Idle Current RF IN NC NC 14 8 RF OUT 1 VPD1 2 MODE 3 VPD2 4 5 GND 16 15 13 12 VCC1 11 VCC1 10 VCC 6 NC 7 RF OUT GND NC 9 Ordering Information RF2196 RF2196 PCBA 3V PCS LINEAR Power Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A0 010518 2-203 RF2196 Absolute Maximum Ratings Parameter Supply Voltage (RF off) Supply Voltage (POUT ≤ 31dBm) Mode Voltage (VMODE) Preliminary Rating +8.0 +5.2 +4.2 Unit VDC VDC VDC VDC dBm °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). 2 POWER AMPLIFIERS Control Voltage (VREG) Input RF Power Operating Case Temperature Storage Temperature Moisture Sensitivity +3.0 +10 -30 to +110 -30 to +150 Modified JEDEC Level 2 Parameter High Power State (VMODE Low) Frequency Range Linear Gain Second Harmonic Third Harmonic Maximum Linear Output Power (CDMA Modulation) Total Linear Efficiency Adjacent Channel Power Rejection Input VSWR Output VSWR Noise Power Specification Min. Typ. Max. Unit Condition Case T=25°C, VCC =3.4V, VREG =2.85V, VMODE =0V to 0.5V, Freq=1850MHz to 1910MHz (unless otherwise specified) 1850 25 1910 27 -50 -63 29 35 -46 -62 -70dBc At 80MHz offset. Case T=25°C, VCC =3.4V, VREG =2.85V, VMODE =2V to 3V, Freq=1850MHz to 1910MHz (unless otherwise specified) -44 -56 10:1 6:1 -141 dBm/Hz Low Power State (VMODE High) Frequency Range Linear Gain Second Harmonic Third Harmonic Maximum Linear Output Power (CDMA Modulation) Max ICC Adjacent Channel Power Rejection Input VSWR Output VSWR 1850 16 1910 20 -45 -60 20 160