RF2196_06

RF2196 0 RoHS Compliant & Pb-Free Product Typical Applications • 3V CDMA PCS Handsets • 3V CDMA KPCS Handsets • 3V TDMA/GAIT PCS Handsets Product Description The RF2196 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide process, and has been designed for use as the final RF amplifier in 3V CDMA and CDMA2000 handsets as well as other applications in the 1750MHz to 1910MHz band. The RF2196 has a low power mode to extend battery life under low output power conditions. The package is an ultra small 4mmx4mm, 16-pin QFN plastic package with backside ground. 0.10 C B -B- 3V PCS LINEAR POWER AMPLIFIER • 3V CDMA 2000 PCS Handsets • Spread-Spectrum Systems • Portable Battery-Powered Equipment 4.00 0.10 C B 2 PLCS 3.75 2 PLCS 2.00 0.80 TYP 2 A 1.60 2 PLCS 3.75 0.75 0.50 INDEX AREA Dimensions in mm. 1.50 SQ. 4.00 0.10 C A 2 PLCS 0.45 0.28 3.20 2 PLCS 2.00 0.10 C A 2 PLCS Shaded pin is lead 1. 12° MAX 0.05 0.00 0.10 M C A B 1.00 0.90 0.75 0.65 C 0.05 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS Package Style: QFN, 16-Pin, 4x4 Features • Single 3V Supply • 29dBm Linear Output Power • 35% Linear Efficiency RF IN GND NC NC NC • Low Power Mode (Up to 20dBm) • 55mA Idle Current 1 VPD1 2 MODE 3 VPD2 4 5 GND 16 15 14 13 12 VCC1 11 VCC1 10 VCC Ordering Information 6 NC 7 RF OUT 8 RF OUT 9 GND RF2196 3V PCS Linear Power Amplifier RF2196PCBA-41X Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A2 060918 2-345 RF2196 Absolute Maximum Ratings Parameter Supply Voltage (RF off) Supply Voltage (POUT ≤ 31dBm) Mode Voltage (VMODE) Control Voltage (VREG) Input RF Power Operating Case Temperature Storage Temperature Rating +8.0 +5.2 +4.2 +3.0 +10 -30 to +110 -30 to +150 Unit VDC VDC VDC VDC dBm °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. RoHS marking based on EUDirective2002/95/EC (at time of this printing). However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter High Power State (VMODE Low) Frequency Range Linear Gain Second Harmonic Third Harmonic Maximum Linear Output Power (CDMA Modulation) Total Linear Efficiency Adjacent Channel Power Rejection Input VSWR Output VSWR Noise Power Specification Min. Typ. Max. Unit Condition Case T=25°C, VCC =3.4V, VREG =2.85V, VMODE =0V to 0.5V, Freq=1850MHz to 1910MHz (unless otherwise specified) 1850 25 1910 27 -50 -63 29 35 -46 -62 -70dBc At 80MHz offset. Case T=25°C, VCC =3.4V, VREG =2.85V, VMODE =2V to 3V, Freq=1850MHz to 1910MHz (unless otherwise specified) -44 -56 10:1 6:1 -141 dBm/Hz Low Power State (VMODE High) Frequency Range Linear Gain Second Harmonic Third Harmonic Maximum Linear Output Power (CDMA Modulation) Max ICC Adjacent Channel Power Rejection Input VSWR Output VSWR 1850 16 1910 20 -45 -60 20 160