RF2301

RF2301 4 Typical Applications • Local Oscillator Buffer Amplifiers • FDD and TDD Communication Systems • Commercial and Consumer Systems • Portable Battery-Powered Equipment • Wireless LAN • ISM Band Applications HIGH ISOLATION BUFFER AMPLIFIER Product Description The RF2301 is a high reverse isolation buffer amplifier. The device is manufactured on a low-cost Gallium Arsenide MESFET process, and has been designed for use as a general purpose buffer in high-end communication systems operating at frequencies from less than 300MHz to higher than 2500MHz. With +5dBm output power, it may also be used as a driver in transmitter applications. The device is packaged in an 8-lead plastic package. The product is self-contained, requiring just a resistor and blocking capacitors to operate. The output power, combined with 50dB reverse isolation at 900MHz allows excellent buffering of LO sources to impedance changes. The device can be used in 3V battery applications. The unit has a total gain of 17dB with only 14mA current from a 3V supply. Optimum Technology Matching® Applied Si BJT Si Bi-CMOS GaAs HBT SiGe HBT 0.008 0.004 0.018 0.014 -A- 4 GENERAL PURPOSE AMPLIFIERS 0.196 0.189 0.050 0.157 0.150 0.244 0.229 Dimensions in mm 0.068 0.053 8° MAX 0° MIN 0.034 0.016 0.009 0.007 NOTES: 1. Shaded lead is Pin 1. 2. All dimensions are excluding mold flash. 3. Lead coplanarity 0.005 with respect to datum "A". ü Package Style: SOIC-8 GaAs MESFET Si CMOS Features • Single 2.7V to 6.0V Supply • +4dBm Output Power • 21dB Small Signal Gain • 50dB Reverse Isolation at 900MHz • Low DC Current Consumption of 14mA • 300MHz to 2500MHz Operation GND 1 GND 2 RF IN 3 GND 4 8 VDD1 7 VDD2 6 RF OUT 5 GND Ordering Information RF2301 RF2301 PCBA High Isolation Buffer Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A8 010717 4-37 RF2301 Absolute Maximum Ratings Parameter Supply Voltage (VDD) DC Supply Current Input RF Power Operating Ambient Temperature Storage Temperature Rating -0.5 to +6.5 60 +10 -40 to +85 -40 to +150 Unit VDC mA dBm °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter Specification Min. Typ. Max. 300 to 2500 -8 8