RF2311PCBA

RF2311 4 Typical Applications • General Purpose High Bandwidth Gain Blocks • IF or RF Buffer Amplifiers • Broadband Test Equipment • Final PA for Medium Power Applications • Driver Stage for Power Amplifiers GENERAL PURPOSE AMPLIFIER Product Description The RF2311 is a general purpose, low cost low power RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily cascadable 50 Ω gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 1600MHz. The gain flatness and high bandwidth make the device suitable for many other applications as well. The device is self-contained with 50 Ω input and output impedances, and no external DC biasing elements are required to operate as specified. 4 .156 .152 .017 1 .195 .191 .050 .240 .232 .056 .052 .004 MIN 5° .022 .018 .008 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ü Package Style: SOP-8 GaAs HBT SiGe HBT GaAs MESFET Si CMOS Features • DC to well over 1600MHz Operation • Internally Matched Input and Output • 14dB Small Signal Gain • 4.2dB Noise Figure • +9dBm Output Power • Single 2.7V to 6V Positive Power Supply VCC 1 GND 2 GND 3 RF IN 4 8 RF OUT 7 GND 6 GND 5 GND Ordering Information RF2311 RF2311 PCBA General Purpose Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev C3 010228 4-81 GENERAL PURPOSE AMPLIFIERS RF2311 Absolute Maximum Ratings Parameter Supply Voltage Input RF Power Operating Ambient Temperature Storage Temperature Rating -0.5 to +6 +10 -40 to +85 -40 to +150 Unit VDC dBm °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter Specification Min. Typ. Max. DC to 1600 14 13 4.2 4.0