0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
RF2321

RF2321

  • 厂商:

    RFMD(威讯)

  • 封装:

  • 描述:

    RF2321 - 3V GENERAL PURPOSE AMPLIFIER - RF Micro Devices

  • 详情介绍
  • 数据手册
  • 价格&库存
RF2321 数据手册
Preliminary  RF2321             • Broadband Gain Blocks • Final PA for Low-Power Applications • IF or RF Buffer Amplifiers • Driver Stage for Power Amplifiers • Oscillator Loop Amplifiers     The RF2321 is a general purpose, low-cost silicon amplifier designed for operation from a 3V supply. The circuit configuration with resistive feedback allows for broadband cascadable amplification. Capacitive compensation extends the bandwidth of the amplifier and input stage design optimizes noise figure. The device is unconditionally stable and internally matched to 50 Ω. The only external components required for specified performance are bypass and DC blocking capacitors (as shown in application schematic). The RF2321 is available in a very small industry-standard SOT-23 5-lead surface mount package, enabling compact designs which conserve board space. .071 .059 .020 .014 .122 .106 1 4 .004 .000 .083 .067 .118 .102 .051 .039 .008 MIN .010 .004               !" # Si BJT Si Bi-CMOS GaAs HBT SiGe HBT GaAs MESFET Si CMOS   • DC to >2000MHz Operation • 2.7V to 3.3V Single Supply • +3dBm Output IP3 • 12dB Gain at 900MHz • 12dB Gain at 1900MHz • High Isolation (36dB at 900MHz) GND 1 GND 2 RF IN 3 5 RF OUT 4 VCC      RF2321 RF2321 PCBA 3V General Purpose Amplifier Fully Assembled Evaluation Board        RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A3 000713 4-91 GENERAL PURPOSE AMPLIFIERS RF2321 Absolute Maximum Ratings Parameter Supply Voltage Operating Ambient Temperature Storage Temperature Preliminary Rating 4.0 -40 to +85 -40 to +150 Unit V °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter Min. Specification Typ. Max. DC to >2000 12 3.6 4 -8 15 11 52 12 3.8 4 -8 15 11 42 12 3.7 3 -7 13 9 36 12 3.7 3 -8 13 9 35 12 4.5 2 -8 8 9 25 3.0±10% 7.7 Unit MHz Condition T=27 °C, VCC =3.0V T=27 °C, VCC =3.0V 4 GENERAL PURPOSE AMPLIFIERS Overall Frequency Range 100MHz Performance Gain Noise Figure Output IP3 Output P1dB Input Return Loss Output Return Loss Isolation dB dB dBm dBm dB dB dB 500MHz Performance Gain Noise Figure Output IP3 Output P1dB Input Return Loss Output Return Loss Isolation dB dB dBm dBm dB dB dB T=27 °C, VCC =3.0V 900MHz Performance Gain Noise Figure Output IP3 Output P1dB Input Return Loss Output Return Loss Isolation dB dB dBm dBm dB dB dB T=27 °C, VCC =3.0V 1000MHz Performance Gain Noise Figure Output IP3 Output P1dB Input Return Loss Output Return Loss Isolation dB dB dBm dBm dB dB dB T=27 °C, VCC =3.0V 2000MHz Performance Gain Noise Figure Output IP3 Output P1dB Input Return Loss Output Return Loss Isolation dB dB dBm dBm dB dB dB V mA T=27 °C, VCC =3.0V Power Supply Operating Voltage Operating Current VCC =3.0V 4-92 Rev A3 000713 Preliminary Pin 1 2 3 Function GND GND RF IN Description Ground connection. Keep traces physically short and connect immediately to ground plane for best performance. Same as pin 1. RF input pin. This pin is not internally DC blocked and thus requires an external blocking capacitor suitable for the frequency of operation. The input impedance of this pin is internally matched to 50 Ω using resistive feedback. RF2321 Interface Schematic VCC RF OUT RF IN 4 4 5 VCC RF OUT Supply connection. This pin should be bypassed with a suitable capacitor(s). RF output and bias pin. The output impedance of this pin is internally See pin 3 schematic. matched to 50 Ω using resistive feedback. Because DC biasing is present on this pin, a DC blocking capacitor should be used in most applications (see application schematic). GENERAL PURPOSE AMPLIFIERS    1 2 100 pF RF IN 3 5 100 pF RF OUT VCC 4 1 nF      (Download Bill of Materials from www.rfmd.com.) P1 P1-1 1 2 NC 3 1 C1 100 pF 2 3 4 C3 1 nF 5 C2 100 pF VCC GND 50 Ω µstrip RF OUT J2 RF IN J1 50 Ω µstrip P1-1 Rev A3 000713 4-93 RF2321         Preliminary 4 GENERAL PURPOSE AMPLIFIERS 4-94 Rev A3 000713 Preliminary RF2321 S21, Vcc= 2.7 V 16 14 12 10 8 6 4 2 0 0.1 1.1 2.1 3.1 Temp = 25°C Temp = 80°C Temp = -40°C RF2321 RF2321 S12, Vcc = 2.7 V -20 Temp = 25°C Temp = 80°C -30 Temp = -40°C Gain (dB) S12 (dB) -40 -50 -60 0.1 1.1 2.1 3.1 Frequency (GHz) Frequency (GHz) 4 GENERAL PURPOSE AMPLIFIERS RF2321 Input VSWR, Vcc = 2.7 V 3 Temp = 80°C 4 RF2321 Output VSWR, Vcc = 2.7 V Temp = 25°C Temp = -40°C 2.5 Temp = 25°C 3 Temp = -40°C Temp = 80°C VSWR 2 VSWR 0.1 1.1 Frequency (GHz) 2.1 3.1 2 1.5 1 1 0 0.1 1.1 2.1 3.1 Frequency (GHz) RF2321 S11, Vcc = 2.7 V, Temp = 25°C Swp Max 3.1GHz 1.0 0.8 RF2321 S22, Vcc = 2.7 V, Temp= 25°C Swp Max 3.1GHz 0.6 2. 0 0.6 0.8 1.0 3.0 2. 0 3.0 10.0 10.0 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 100MHz -10.0 3.1GHz -1 -10.0 3.1GHz -0.2 .4 -0 .4 -0 .0 -2 -0. 6 -0.8 -0. 6 -1.0 -0.8 Swp Min 0.1GHz -1.0 .0 -2 Swp Min 0.1GHz Rev A3 000713 -4. 0 -5 -5.0 -0.2 4.0 5.0 0 0 -3 . .0 0.2 . 4.0 5.0 0. .4 -4. 0 -5.0 -3 .0 0. 4 0.2 4.0 5.0 10.0 100MHz 4-95 RF2321 RF2321 S21, Vcc= 3.0 V 16 14 12 10 8 6 4 2 Temp = 25°C Temp = 80°C Temp = -40°C Preliminary RF2321 S12, Vcc = 3.0 V -20 Temp = 25°C Temp = 80°C -30 Temp = -40°C Gain (dB) S12 (dB) 0.1 1.1 2.1 3.1 -40 -50 4 GENERAL PURPOSE AMPLIFIERS 0 -60 0.1 1.1 2.1 3.1 Frequency (GHz) Frequency (GHz) RF2321 Input VSWR, Vcc = 3.0 V 3 Temp = 80°C 4 RF2321 Output VSWR, Vcc = 3.0 V Temp = 25°C Temp = -40°C 2.5 Temp = 25°C 3 Temp = -40°C Temp = 80°C VSWR 2 VSWR 0.1 1.1 Frequency (GHz) 2.1 3.1 2 1.5 1 1 0 0.1 1.1 2.1 3.1 Frequency (GHz) RF2321 S11, Vcc = 3.0 V, Temp = 25°C Swp Max 3.1GHz 1.0 0.8 RF2321 S22, Vcc = 3.0 V, Temp= 25°C Swp Max 3.1GHz 0.6 2. 0 0.6 0.8 1.0 3.0 2. 0 3.0 10.0 10.0 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 100MHz -0.2 3.1GHz -10.0 -10.0 3.1GHz .4 -0 .4 -0 .0 -2 -0. 6 -0.8 -0. 6 -1.0 -0.8 Swp Min 0.1GHz -1.0 .0 -2 Swp Min 0.1GHz 4-96 Rev A3 000713 -4. 0 -5.0 -0.2 4.0 5.0 0 0 -3 .0 0.2 4.0 5.0 0. 4 -4. 0 -5.0 -3 .0 0. 4 0.2 4.0 5.0 10.0 100MHz Preliminary RF2321 S21, Vcc= 3.3 V 16 14 12 10 8 6 4 2 0 0.1 1.1 2.1 3.1 Temp = 25°C Temp = 80°C Temp = -40°C RF2321 RF2321 S12, Vcc = 3.3 V -20 Temp = 25°C Temp = 80°C -30 Temp = -40°C Gain (dB) S12 (dB) -40 -50 -60 0.1 1.1 2.1 3.1 Frequency (GHz) Frequency (GHz) 4 GENERAL PURPOSE AMPLIFIERS RF2321 Input VSWR, Vcc = 3.3 V 4 Temp = 80°C 4 RF2321 Output VSWR, Vcc = 3.3 V Temp = 25°C Temp = -40°C Temp = 25°C 3 Temp = -40°C Temp = 80°C 3 VSWR VSWR 2 1 2 1 0.1 1.1 Frequency (GHz) 2.1 3.1 0 0.1 1.1 2.1 3.1 Frequency (GHz) RF2321 S11, Vcc = 3.3 V, Temp = 25°C Swp Max 3.1GHz 1.0 0.8 RF2321 S22, Vcc = 3.3 V, Temp= 25°C Swp Max 3.1GHz 0.6 2. 0 0.6 0.8 1.0 3.0 2. 0 3.0 10.0 10.0 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 100MHz 3.1GHz -0.2 3.1GHz -10.0 -10.0 .4 -0 .4 -0 .0 -2 -0. 6 -0.8 -0. 6 -1.0 -0.8 Swp Min 0.1GHz -1.0 .0 -2 Swp Min 0.1GHz Rev A3 000713 -4. 0 -5.0 -0.2 4.0 5.0 0 0 -3 .0 0.2 4.0 5.0 0. 4 -4. 0 -5.0 -3 .0 0. 4 0.2 4.0 5.0 10.0 100MHz 4-97 RF2321 Preliminary 4 GENERAL PURPOSE AMPLIFIERS 4-98 Rev A3 000713
RF2321
1. 物料型号: - 型号:RF2321 - 制造商:RF Micro Devices, Inc - 地址:7625 Thorndike Road Greensboro, NC 27409, USA - 联系方式:Tel (336)6641233 Fax (336)6640454 - 官网:[http://w.rimd.com](http://w.rimd.com)

2. 器件简介: - RF2321是一款通用的、低成本的硅放大器,设计用于3V供电操作。该电路配置采用电阻反馈,允许宽带级联放大。电容补偿扩展了放大器的带宽,输入级设计优化了噪声系数。该器件无条件稳定,内部匹配至50欧姆。所需的唯一外部组件为旁路和直流阻断电容器(如应用电路图所示)。RF2321提供非常小的行业标准SOT-23 5引脚表面贴装封装,支持紧凑设计,节省板空间。

3. 引脚分配: - Pin 1: GND(地连接) - Pin 2: GND(同Pin 1) - Pin 3: RF IN(射频输入引脚,需要外部直流阻断电容器) - Pin 4: VCC(供电连接,应旁路合适的电容器) - Pin 5: RF OUT(射频输出和偏置引脚,应使用直流阻断电容器)

4. 参数特性: - 工作频率:DC至>2000MHz - 供电电压:2.7V至3.3V单供电 - 输出IP3:+3dBm - 在900MHz和1900MHz处增益为12dB - 高隔离度(900MHz处为36dB)

5. 功能详解: - 该放大器适用于宽带增益块、低功率应用的最终功率放大器、中频或射频缓冲放大器等应用场景。它采用SiBJT和SiBi-CMOS技术,具有3V通用放大器全组装评估板的功能块图。

6. 应用信息: - 评估板布局:1"x1" - 评估板原理图和物料清单可从[www.rfmd.com](http://www.rfmd.com)下载。

7. 封装信息: - 封装风格:SOT-23-5
RF2321 价格&库存

很抱歉,暂时无法提供与“RF2321”相匹配的价格&库存,您可以联系我们找货

免费人工找货