Preliminary
RF2325
3V GENERAL PURPOSE AMPLIFIER
4
Typical Applications
• Broadband Gain Blocks • Final PA for Low-Power Applications • IF or RF Buffer Amplifiers
• Driver Stage for Power Amplifiers • Oscillator Loop Amplifiers
Product Description
The RF2325 is a general purpose, low-cost silicon amplifier designed for operation from a 3V supply. The Darlington circuit configuration with resistive feedback allows for broadband cascadable amplification. The device is unconditionally stable and internally matched to 50 Ω. The only external components required for specified performance are bypass and DC blocking capacitors and two bias elements (as shown in application schematic). The RF2325 is available in a very small industry-standard SOT-23 5-lead surface mount package, enabling compact designs which conserve board space.
1.60 + 0.01 0.400
1
4
GENERAL PURPOSE AMPLIFIERS
0.15 0.05
2.90 + 0.10
0.950
2.80 + 0.20 3° MAX 0° MIN 0.45 + 0.10 0.127
1.44 1.04
Dimensions in mm.
Optimum Technology Matching® Applied
ü
Package Style: SOT 5-Lead
Si BJT Si Bi-CMOS
GaAs HBT SiGe HBT
GaAs MESFET Si CMOS
Features
• DC to >2000MHz Operation • 2.7V to 3.3V Single Supply • +17dBm Output IP3 • 16dB Gain at 900MHz
GND 1 GND 2 RF IN 3
5 RF OUT
• 12dB Gain at 1900MHz • Internally 50 Ω Matched Input and Output
4 GND
Ordering Information
RF2325 RF2325 PCBA 3V General Purpose Amplifier Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA
Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com
Rev A4 010720
4-121
RF2325
Absolute Maximum Ratings Parameter
Supply Voltage Operating Ambient Temperature Storage Temperature
Preliminary
Rating
4.0 -40 to +85 -55 to +150
Unit
V °C °C Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
Parameter
Min.
Specification Typ. Max.
DC to >2000 20 5.0 18 8 15 18 23 19 5.0 18 7 12 23 22
Unit
MHz
Condition
T=27 °C, VCC =3.0V T=27 °C, VCC =3.0V
4
GENERAL PURPOSE AMPLIFIERS
Overall
Frequency Range
100MHz Performance
Gain Noise Figure Output IP3 Output P1dB Input Return Loss Output Return Loss Isolation dB dB dBm dBm dB dB dB
500MHz Performance
Gain Noise Figure Output IP3 Output P1dB Input Return Loss Output Return Loss Isolation dB dB dBm dBm dB dB dB
T=27 °C, VCC =3.0V
900MHz Performance
Gain Noise Figure Output IP3 Output P1dB Input Return Loss Output Return Loss Isolation 15.3 16 5.0 17 7 10 20 22 16 5.0 17 7 10 19 22 12 5.4 16 6 10 17 19 3.0±10% 27 17.3 dB dB dBm dBm dB dB dB
T=27 °C, VCC =3.0V
1000MHz Performance
Gain Noise Figure Output IP3 Output P1dB Input Return Loss Output Return Loss Isolation dB dB dBm dBm dB dB dB
T=27 °C, VCC =3.0V
2000MHz Performance
Gain Noise Figure Output IP3 Output P1dB Input Return Loss Output Return Loss Isolation dB dB dBm dBm dB dB dB V mA
T=27 °C, VCC =3.0V
Power Supply
Operating Voltage Operating Current 23.5 29.5 VCC =3.0V
4-122
Rev A4 010720
Preliminary
Pin 1 2 3 Function GND GND RF IN Description
Ground connection. Keep traces physically short and connect immediately to ground plane for best performance. Same as pin 1. RF input pin. This pin is not externally DC blocked and thus requires an external blocking capacitor suitable for the frequency of operation. The input impedance of this pin is internally matched to 50 Ω using resistive feedback.
RF IN
RF2325
Interface Schematic
RF OUT
4
4 5 GND RF OUT
Same as pin 1. RF output and bias pin. The input impedance of this pin is internally matched to 50 Ω using resistive feedback. Bias should be supplied to this pin through an external series resistor and RF choke inductor. Because DC biasing is present on this pin, a DC blocking capacitor should be used in most applications (see application schematic). The supply side of the bias network should be well-bypassed. See pin 3 schematic. GENERAL PURPOSE AMPLIFIERS
Application Schematic
VCC
39 Ω
1 nF
220 nH 1 2 100 pF RF IN 3 4 5 100 pF RF OUT
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
P1 P1-1 1 2 NC 3 1 C1 100 pF 2 3 4 5 C2 100 pF VCC GND L2 220 nH 50 Ω µ strip R1 39 Ω C5 1 nF P1-1
RF OUT J2
RF IN J1
50 Ω µ strip
Rev A4 010720
4-123
RF2325
Evaluation Board Layout 1” x 1”
Preliminary
4
GENERAL PURPOSE AMPLIFIERS
4-124
Rev A4 010720
Preliminary
RF2325 S21, Vcc=2.7 V
22 20 18 16 14 22 20 18 16 14
RF2325
RF2325 S21, Vcc=2.7 V
Gain (dB)
12 10 8 6 4 2 0 0.1 1.1 2.1 3.1
Temp = 25°C Temp = 80°C Temp = -40°C
Gain (dB)
12 10 8 6 4 2 0 0.1 1.1 2.1 3.1
Temp = 25°C Temp = 80°C Temp = -40°C
Frequency (GHz)
Frequency (GHz)
4
GENERAL PURPOSE AMPLIFIERS
RF2325 Input VSWR, Vcc = 2.7 V
3
Temp = 25°C Temp = 80°C
RF2325 Output VSWR, Vcc = 2.7 V
4
Temp = 25°C
3
2.5
Temp = -40°C
Temp = 80°C Temp = -40°C
VSWR
2
VSWR 0.1 1.1 Frequency (GHz) 2.1 3.1
2
1.5
1
1
0 0.1 1.1 2.1 3.1
Frequency (GHz)
RF2325 S11, Vcc = 2.7 V, Temp = 25°C
1.0
0.6
RF2325 S22, Vcc = 2.7 V, Temp= 25°C
1.0
0.6
Swp Max 3.1GHz
2. 0
Swp Max 3.1GHz
2. 0
0.8
0 3.
4.0 5.0
0.8
100MHz
10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0
10.0
3.0GHz
-4. 0 -5.0 -4. 0 -5.0
-0.2 -0.2
-10.0 -10.0
.0
-2
-0. 6
-0.8
-0. 6
Swp Min 0.1GHz
-0.8
-2
.0
-1.0
Rev A4 010720
-1.0
-3
-3
.4 -0
.4 -0
10.0
.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0 5.0
0
0. 4
0.2
.0
0. 4
0 3.
4.0 5.0
0.2
100MHz 3.0GHz
10.0
Swp Min 0.1GHz
4-125
RF2325
RF2325 S21, Vcc=3.0 V
22 20 18 16 -16 -14
Temp = 25°C Temp = 80°C Temp = -40°C
Preliminary
RF2325 S12, Vcc = 3.0 V
Gain (dB)
14 12 10 8 6 4 2
Temp = 25°C Temp = 80°C Temp = -40°C
S12 (dB)
0.1 1.1 2.1 3.1
-18
-20
-22
4
GENERAL PURPOSE AMPLIFIERS
0
-24 0.1 1.1 2.1 3.1
Frequency (GHz)
Frequency (GHz)
RF2325 Input VSWR, Vcc = 3.0 V
3
Temp = 25°C Temp = 80°C
4
RF2325 Output VSWR, Vcc = 3.0 V
Temp = 25°C
3
2.5
Temp = -40°C
Temp = 80°C Temp = -40°C
VSWR
2
VSWR 0.1 1.1 Frequency (GHz) 2.1 3.1
2
1.5
1
1
0 0.1 1.1 2.1 3.1
Frequency (GHz)
RF2325 S11, Vcc = 3.0 V, Temp = 25°C
1.0
0.6
RF2325 S22, Vcc = 3.0 V, Temp= 25°C
1.0
0.6
Swp Max 3.07GHz
2. 0
Swp Max 3.07GHz
2. 0
0.8
0 3.
4.0 5.0
0.8
100MHz
10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0
10.0
3.0GHz
-4. 0 -5.0 -4. 0 -5.0
-0.2 -0.2
-10.0 -10.0
.0
-2
-0. 6
-0.8
-0. 6
Swp Min 0.1GHz
-0.8
-2
.0
-1.0
4-126
-1.0
Rev A4 010720
-3
-3
.4 -0
.4 -0
10.0
.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0 5.0
0
0. 4
0.2
.0
0. 4
0 3.
4.0 5.0
0.2
100MHz 3.0GHz
10.0
Swp Min 0.1GHz
Preliminary
RF2325 S21, Vcc=3.3 V
22 20 18 16 -16 -14
Temp = 25°C Temp = 80°C Temp = -40°C
RF2325
RF2325 S12, Vcc = 3.3 V
Gain (dB)
14 12 10 8 6 4 2 0 0.1 1.1 2.1 3.1
Temp = 25°C Temp = 80°C Temp = -40°C
S12 (dB)
-18
-20
-22
-24 0.1 1.1 2.1 3.1
Frequency (GHz)
Frequency (GHz)
4
GENERAL PURPOSE AMPLIFIERS
RF2325 Input VSWR, Vcc = 3.3 V
3
Temp = 25°C Temp = 80°C
4
RF2325 Output VSWR, Vcc = 3.3 V
Temp = 25°C
3
2.5
Temp = -40°C
Temp = 80°C Temp = -40°C
VSWR
2
VSWR 0.1 1.1 Frequency (GHz) 2.1 3.1
2
1.5
1
1
0 0.1 1.1 2.1 3.1
Frequency (GHz)
RF2325 S11, Vcc = 3.3 V, Temp = 25°C
0.6
RF2325 S22, Vcc = 3.3 V, Temp= 25°C
0.6
Swp Max 3.1GHz
2. 0
Swp Max 3.1GHz
2. 0
1.0
0.8
0 3.
4.0 5.0
0.8
1.0
100MHz
10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0
10.0
3.0GHz
-0.2 -0.2
-10.0 -10.0
.0
-2
-0. 6
-0.8
-0. 6
Swp Min 0.1GHz
-0.8
-2
.0
-1.0
Rev A4 010720
-1.0
-3
-3
.4 -0
.4 -0
Swp Min 0.1GHz
-4. 0 -5.0
10.0
.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0 5.0
0
0
0. 4
0.2
-4. 0 -5.0
.0
0. 4
0 3.
4.0 5.0
0.2
100MHz
10.0
3.0GHz
4-127
RF2325
Preliminary
4
GENERAL PURPOSE AMPLIFIERS
4-128
Rev A4 010720
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