RF2334_03

RF2334 0 Typical Applications • Broadband, Low Noise Gain Blocks • IF or RF Buffer Amplifiers • Driver Stage for Power Amplifiers Product Description The RF2334 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 Ω gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 4000MHz. The device is self-contained with 50 Ω input and output impedances and requires only two external DC biasing elements to operate as specified. The RF2334 is available in a very small industry-standard SOT23-5 surface mount package, enabling compact designs which conserve board space. 1.60 + 0.01 0.400 1 GENERAL PURPOSE AMPLIFIER • Final PA for Low Power Applications • Broadband Test Equipment 0.15 0.05 2.90 + 0.10 0.950 2.80 + 0.20 3° MAX 0° MIN 0.45 + 0.10 0.127 1.44 1.04 Dimensions in mm. Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS Package Style: SOT23-5 Features • DC to 6000MHz Operation • Internally matched Input and Output • 16dB Small Signal Gain • 5dB Noise Figure • +18.5dBm Output Power GND 1 GND 2 RF IN 3 5 RF OUT • Single Positive Power Supply 4 GND Ordering Information RF2334 RF2334 PCBA General Purpose Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A10 030415 4-271 RF2334 Absolute Maximum Ratings Parameter Input RF Power Operating Ambient Temperature Storage Temperature Rating +13 -40 to +85 -60 to +150 Unit dBm °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter Overall Frequency Range 3dB Bandwidth Gain Specification Min. Typ. Max. DC to 6000 2.5 19.4 18 16 14 13 ±2 4.8 2.1:1 1.8:1 +33 +18.5 20.5 288 172 400 Unit MHz GHz dB dB dB dB dB dB Condition T=25°C, ICC =65mA Gain Flatness Noise Figure Input VSWR Output VSWR Output IP3 Output P1dB Reverse Isolation dBm dBm dB °C/W °C years Thermal ThetaJC Maximum Measured Junction Temperature Mean Time Between Failures Freq=100MHz Freq=1000MHz Freq=2000MHz Freq=3000MHz Freq=4000MHz 100MHz to 2000MHz Freq=2000MHz In a 50 Ω system, DC to 4000MHz In a 50 Ω system, DC to 4000MHz Freq=1000MHz±50kHz, PTONE =-10dBm Freq=1000MHz Freq=2000MHz ICC =65mA, PDISS =300mW (See Note.) TAMB =+85°C, VPIN =4.64V See Note. With 22 Ω bias resistor Device Operating Voltage 4.8 V At pin 5 with ICC =65mA Supply Voltage 6.3 V At evaluation board connector, ICC =65mA Operating Current 65 68 mA See note. Note: Because of process variations from part to part, the current resulting from a fixed bias voltage will vary. As a result, caution should be used in designing fixed voltage bias circuits to ensure the worst case bias current does not exceed 68mA over all intended operating conditions. Power Supply 4-272 Rev A10 030415 RF2334 Pin 1 2 3 Function GND GND RF IN Description Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. Same as pin 1. RF input pin. This pin is NOT internally DC-blocked. A DC-blocking capacitor, suitable for the frequency of operation, should be used in most applications. DC coupling of the input is not allowed, because this will override the internal feedback loop and cause temperature instability. Same as pin 1. RF output and bias pin. Biasing is accomplished with an external series resistor and choke inductor to VCC. The resistor is selected to set the DC current into this pin to a desired level. The resistor value is determined by the following equation: Interface Schematic 4 5 GND RF OUT RF OUT ( V SUPPLY – V DEVICE ) R = -----------------------------------------------------I CC Care should also be taken in the resistor selection to ensure that the current into the part never exceeds 68mA over the planned operating temperature. This means that a resistor between the supply and this pin is always required, even if a supply near 4.8V is available, to provide DC feedback to prevent thermal runaway. Because DC is present on this pin, a DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. The supply side of the bias network should also be well bypassed. RF IN Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) P1 P1-1 1 2 3 VCC GND NC 1 C1 100 pF 2 3 4 233X410- VCC P1-1 R1 22 Ω L1 100 nH 5 C2 100 pF C3 100 pF C4 1 μF 50 Ω μstrip J2 RF OUT J1 RF IN 50 Ω μstrip Rev A10 030415 4-273 RF2334 Evaluation Board Layout Board Size 1.0” x 1.0” Board Thickness 0.020”, Board Material R0-4003 Rogers 4-274 Rev A10 030415 RF2334 Gain versus Frequency Across Temperature 22.0 Output P1dB versus Frequency Across Temperature 20.0 -40°C 26°C 19.0 18.0 17.0 ICC = 65 mA ICC = 65 mA -40°C 26°C 85°C 20.0 85°C Output Power (dbm) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 18.0 Gain (dB) 16.0 15.0 14.0 13.0 12.0 16.0 14.0 12.0 11.0 10.0 10.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Frequency (GHz) Frequency (GHz) Output IP3 versus Frequency Across Temperature 35.00 Noise Figure versus Frequency Across Temperature 9.00 ICC = 65 mA -40°C ICC = 65 mA 33.00 26°C 85°C 8.00 3rd Order Intercept Power (dBm) 31.00 29.00 Noise Figure (dB) 7.00 6.00 27.00 5.00 25.00 -40°C 26°C 85°C 21.00 0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00 3.00 0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00 23.00 4.00 Frequency (GHz) Frequency (GHz) Input VSWR versus Frequency Across Temperature 2.20 Output VSWR versus Frequency Across Temperature 2.20 ICC = 65 mA -40°C 26°C 85°C ICC = 65 mA -40°C 26°C 2.00 2.00 85°C 1.80 1.80 VSWR 1.60 VSWR 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00 1.60 1.40 1.40 1.20 1.20 1.00 0.10 1.00 0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00 Frequency (GHz) Frequency (GHz) Rev A10 030415 4-275 RF2334 22.00 Reverse Isolation versus Frequency Across Temperature, ICC = 65 mA -40°C Current versus Voltage at Evaluation Board Connector, 100.0 90.0 80.0 70.0 60.0 RBIAS = 22 Ω 21.00 26°C 85°C Reverse Isolation (dB) 20.00 ICC (mA) 19.00 50.0 40.0 30.0 20.0 -40C 25C 85C 18.00 17.00 16.00 10.0 15.00 0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00 0.0 5.6 5.8 6.0 6.2 6.4 6.6 6.8 Frequency (GHz) VCC (V) Current versus Voltage (At Pin 5) 100.0 90.0 0.40 80.0 70.0 60.0 0.35 0.45 Power Dissipated versus Voltage at Pin 5 (TAMBIENT = +85°C) Power Dissipated (W) -40C 25C 85C Vcc=6.3V ICC (mA) 0.30 50.0 40.0 30.0 20.0 10.0 0.0 4.6 4.7 4.8 4.9 5.0 5.1 5.2 0.25 0.20 0.15 0.10 4.64 4.66 4.68 4.70 4.72 4.74 4.76 4.78 VPIN (V) VPIN (V) Junction Temperature versus Power Dissipated 220.00 210.00 200.00 100000 MTTF versus Junction Temperature (60% Confidence Interval) 1000000 (TAMBIENT = +85°C) Junction Temperature (°C) 190.00 MTTF (Years) 180.00 170.00 160.00 150.00 140.00 130.00 120.00 0.20 0.22 0.24 0.26 0.28 0.30 0.32 0.34 0.36 0.38 0.40 10000 1000 100 10 100 125 150 175 200 Power Dissipated (W) Junction Temperature (°C) 4-276 Rev A10 030415 RF2334 De-Embedded S11, VCC S11 = 4.84V, ICC = 65mA, T = 25°C 1.0 6 0. De-Embedded S22, VCC = 4.84V, ICC = 65mA, T = 25°C S22 1.0 6 0. Swp Max 6GHz 2. 0 Swp Max 6GHz 2. 0 0 3. 0.8 0. 4 0.8 0. 4 0 3. 0 4. 0.2 0 4. 5.0 5.0 10.0 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0 0 .4 -0 . -0 4 .0 -2 -0 .6 -0.8 -0 .6 Swp Min 0.01GHz -0.8 .0 -2 Swp Min 0.01GHz -1.0 Rev A10 030415 -1.0 -5. -4 .0 0 -3 .0 -5. -4 .0 0 2 -0. 2 -0. -10.0 -10.0 -3 .0 0.2 10.0 10.0 4-277 RF2334 4-278 Rev A10 030415