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RF2352PCBA

RF2352PCBA

  • 厂商:

    RFMD(威讯)

  • 封装:

  • 描述:

    RF2352PCBA - 3V CDMA DRIVER AMPLIFIER - RF Micro Devices

  • 数据手册
  • 价格&库存
RF2352PCBA 数据手册
Preliminary RF2352 3V CDMA DRIVER AMPLIFIER 4 Typical Applications • TDMA/CDMA/FM Driver Amplifier • Low Noise Transmit Driver Amplifier • General Purpose Amplification • Commercial and Consumer Systems Product Description 3.75 2 0.45 0.28 0.75 0.50 0.80 TYP 1 1 4 GENERAL PURPOSE AMPLIFIERS The RF2352 is a low noise driver amplifier for 900MHz CDMA/AMPS applications. The device is designed for operation from 2.7V to 3.6V, and features selectable high and low gain modes. In high gain mode, the device will provide about 19dB of gain, and the linearity and current drain are set with an external resistor, allowing the designer to select the optimum performance for a given application. In the low gain, or “bypass” mode, the gain is controlled by an external attenuator network, and the device draws essentially no current. The part is fabricated using a high performance silicon BiCMOS process, and is packaged in a 4mmx4mm, 16-pin, leadless chip carrier. 3.75 + 1.60 4.00 12° 1.50 SQ INDEX AREA 3 3.20 4.00 1.00 0.90 0.75 0.65 NOTES: 1 Shaded Pin is Lead 1. 2 Dimension applies to plated terminal and is measured between 0.10 mm and 0.25 mm from terminal tip. 0.05 0.00 The terminal #1 identifier and terminal numbering convention 3 shall conform to JESD 95-1 SPP-012. Details of terminal #1 identifier are optional, but must be located within the zone indicated. The identifier may be either a mold or marked feature. 4 5 Pins 1 and 9 are fused. Package Warpage: 0.05 max. Optimum Technology Matching® Applied Package Style: LCC, 16-Pin, 4x4 üSi Bi-CMOS GND Si BJT GaAs HBT SiGe HBT RF GND GaAs MESFET Si CMOS Features • Low Noise and High Intercept Point • Power Down Control • Gain Control • Single 2.7V to 3.6V Power Supply • Extremely Small MLF16 Package NC NC 14 1 RF IN NC VREF 2 3 4 5 PD 16 15 13 12 11 10 RF OUT VCC ATT OUT2 6 ATT OUT1 7 NC 8 ATT IN NC 9 GND Ordering Information RF2352 RF2352 PCBA 3V CDMA Driver Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A4 010720 4-177 RF2352 Absolute Maximum Ratings Parameter Supply Voltage Input RF Level Operating Ambient Temperature Storage Temperature Preliminary Rating -0.5 to +4.5 0 -40 to +85 -40 to +150 Unit VDC dBm °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter Specification Min. Typ. Max. Unit Condition VCC =3.0V, T=25°C, External Matching Components Required. VPD =2.8V, POUT =+4dBm, ICC =15mA At 824MHz 4 GENERAL PURPOSE AMPLIFIERS Overall High Gain Mode Gain Noise Figure Input VSWR Output VSWR Adjacent Channel Power Rejection (ACPR1) Alternate Channel Power Rejection (ACPR2) Gain Noise Figure Input VSWR Output VSWR Adjacent Channel Power Rejection (ACPR1) Alternate Channel Power Rejection (ACPR2) Gain Noise Figure Input VSWR Output VSWR Adjacent Channel Power Rejection (ACPR1) Alternate Channel Power Rejection (ACPR2) 18 20 1.9 1.3 1.6 60 80 19 2.0 1.6 1.5 60 77 18.5 2.2 1.8 1.4 60 77 20.5 3.2 2.0 1.6 21 3.0 1.8 1.7 22 2.9 1.5 1.8 dB dB 57 78 17 dBc dBc dB dB 900kHz offset 1.98MHz offset At 874MHz 58 76 16.5 dBc dBc dB dB 900kHz offset 1.98MHz offset At 925MHz 57 76 dBc dBc 900kHz offset 1.98MHz offset VPD =0V, Pins 6 and 8 shorted. At 824MHz Bypass (Low Gain) Mode Gain Noise Figure Input VSWR Output VSWR Gain Noise Figure Input VSWR Output VSWR Gain Noise Figure Input VSWR Output VSWR -4.2 4.2 1.2 1.4 -3.7 3.7 1.4 1.3 -4.7 4.7 1.5 1.4 2.7 3.0 15.0 dB dB 1.4 1.6 dB dB 1.6 1.5 dB dB 1.7 1.6 3.6 10 V mA µA At 874MHz At 925MHz Power Supply Power Supply Range (VCC) Current Drain (ICC) Current Drain (ICC) VPD =2.8V (High Gain Mode) VPD =0V (Bypass Mode) 4-178 Rev A4 010720 Preliminary Pin 1 2 Function GND RF IN Description Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. RF input pin. It is DC-coupled and looks like 50 Ω from 824MHz to 925MHz. RF2352 Interface Schematic RF OUT Bias RF IN 3 4 NC VREF Not connected. Provides the bias voltage for controlling the RF amplifier current drain. This pin is typically connected through a resistor to an external regulated power supply. It may be connected to the same power supply as the VCC pin. However, if more bias control is desired, it may be connected to a separate supply. With a series external resistor of 1500 Ω and power supply of 3V applied, the amplifier current drain should be around 14mA. By increasing the resistor, the amplifier current drain may be dropped. Conversely, by decreasing the resistor, the amplifier current may be increased to a maximum of 30mA. Power down function. When 0V to 0.5V is applied, the device is in Bypass Mode: the amplifier is shut off and the MOSFET switches are activated. There is no DC current dissipation in this state. When 1.5V to 3V is applied, the device is switched to High Gain Mode: the amplifier is activated and the MOSFET switches are opened. This is the normal operating mode. Output of the first MOSFET switch. DC-coupled. When the PD pin is grounded (Bypass Mode), the MOSFET switches are shorted, sending any signals at the RF IN pin through the first MOSFET and off the chip. In cases where minimum RF attenuation is desired, this pin should be shorted with 50 Ω microstrip to the ATT IN pin. This setup will yield approximately 4dB of insertion loss. If more attenuation is desired, a resistive pad between the ATT OUT1 and ATT IN pins can be added to the PC board. Not connected. Input to the second MOSFET switch. DC-coupled. When the PD pin is grounded (Bypass Mode), the MOSFET switches are shorted. See the ATT OUT1 pin description for setup options. VREF 4 GENERAL PURPOSE AMPLIFIERS ATT OUT1 ATT OUT2 5 PD PD 6 ATT OUT1 RF IN 7 8 NC ATT IN ATT IN 9 10 11 12 13 14 15 16 Pkg Base GND ATT OUT2 VCC RF OUT NC NC RF GND NC GND Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. Output of the second MOSFET switch. DC-coupled. When the PD pin is grounded (Bypass Mode), the MOSFET switches are shorted. This pin should be shorted with 50 Ω microstrip to the amplifier load. Provides the power supply to the logic circuitry on the IC. Amplifier output pin. An open collector output that needs VCC applied to it through an inductor. Typically, a shunt inductor, series capacitor matching network is used to provide a 50 Ω output match. Not connected. Not connected. Amplifier ground. For best performance, keep traces physically short and connect immediately to ground plane. Not connected. Ground connection for die flag. The backside of the package should be soldered to a top side ground pad which is connected to the ground plane with multiple vias. Rev A4 010720 4-179 RF2352 Application Schematic VCC 1 nF Preliminary 10 nH 4 pF 50 Ω µstrip RF OUT VCC 1 22 nF RF IN 2 3 1500 Ω 4 1 nF 5 1 nF 16 15 14 13 12 1 nF 11 50 Ω µstrip 10 4 GENERAL PURPOSE AMPLIFIERS VCC 6 7 8 9 MODE SELECT Package base serves as die flag ground. The vias connecting the backside of the board should be large in diameter to allow for easier soldering. Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) VCC L1 10 nH 1 2 3 4 C2 1 nF C3 1 nF 5 6 7 8 16 15 14 13 12 11 10 9 2352400- C6 1 nF C5 4 pF C4 1 nF 50 Ω µstrip J2 RF OUT VCC J1 RF IN 50 Ω µstrip C1 22 nF R1 1500 Ω VREF 50 Ω µstrip PD R2* 0Ω 50 Ω µstrip R3* * R4* 0Ω P1 1 2 PD GND VREF P2 1 2 3 CON3 NC GND VCC * R2, R3 and R4 form a "Tee" attenuator network which determines the gain in the bypass mode. Evaluation boards are shipped with R2 and R4 as 0 Ω jumpers, and R3 omitted. This configuration provides the maximum gain (about -4 dB) available in bypass mode. Package base serves as die flag ground. The vias connecting the backside of the board should be large in diameter to allow for easier soldering. OMIT 3 CON3 4-180 Rev A4 010720 Preliminary Evaluation Board Layout Board Size 2.0" x 2.0" Board Thickness 0.031”; Board Material FR-4 RF2352 4 GENERAL PURPOSE AMPLIFIERS Rev A4 010720 4-181 RF2352 ACPR1 versus ICC -50.0 -52.0 -54.0 -56.0 Preliminary ACPR2 versus ICC -70.0 -72.0 -74.0 -76.0 VCC=3V, VPD=2.8V, Temperature=26°C, POUT=4dBm 824 MHz 874 MHz 925MHz VCC=3V, VPD=2.8V, Temperature=26°C, POUT=4dBm 824 MHz 874 MHz 925 MHz ACPR1 (dB) -60.0 -62.0 -64.0 -66.0 -68.0 -70.0 10.0 ACPR2 (dB) 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 28.0 -58.0 -78.0 -80.0 -82.0 -84.0 -86.0 -88.0 -90.0 10.0 4 GENERAL PURPOSE AMPLIFIERS 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 28.0 ICC (mA) ICC (mA) Gain versus VCC 25.0 24.0 23.0 22.0 21.0 20.0 19.0 18.0 17.0 16.0 15.0 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 ICC=15mA, VPD=2.8V, Temperature=25°C, POUT=4dBm 824 MHz 874 MHz 925 MHz Gain (dB) VCC (V) 4-182 Rev A4 010720
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