RF2361
3V LOW NOISE AMPLIFIER/ 3V PA DRIVER AMPLIFIER
Package Style: SOT 5-Lead
Features
Low Noise and High Intercept Point Adjustable Bias Current Power Down Control Single 2.5V to 6.0V Power Supply 150MHz to 2500MHz Operation Extremely Small SOT 5-Lead Package
RF IN 1 5 GND2
GND1
2
VPD
3
4
RF OUT
Applications
TDMA/CDMA/FM Cellular PCS LNA Low Noise Transmit Driver Amplifier General Purpose Amplification Commercial and Consumer Systems
Functional Block Diagram
Product Description
The RF2361 is a low noise amplifier with a very high dynamic range designed for digital cellular applications. The device functions as an outstanding front end low noise amplifier or power amplifier driver amplifier in the transmit chain of digital subscriber units where low transmit noise power is a concern. When used as an LNA, the bias current can be set externally. When used as a PA driver, the IC can operate directly from a single cell Li-ion battery and includes a power down feature that can be used to completely turn off the device. The IC is featured in a standard SOT 5-lead plastic package. NOTE: The RF2361 is a non-Pb-free product. If a Pb-free product with the same functionality and package is desired, please see the RF2878.
Ordering Information
RF2361 RF2361 PCBA-D RF2361 PCBA-L 3V Low Noise Amplifier/ 3V PA Driver Amplifier Fully Assembled Evaluation Board (Driver) Fully Assembled Evaluation Board (LNA)
Optimum Technology Matching® Applied
GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A10 DS070731
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RF2361
Absolute Maximum Ratings Parameter
Supply Voltage, VCC Power Down Voltage, VPD Input RF Level Operating Ambient Temperature Storage Temperature
Rating
-0.5 to +8.0 < VCC +10 -40 to +85 -40 to +150
Unit
VDC VDC dBm °C °C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
Parameter
Overall
RF Frequency Range
Min.
Specification Typ.
150 to 2500
Max.
Unit
MHz
Condition
Low Noise Amplifier 881MHz Performance
Gain Noise Figure Input IP3 19.5 19.5 20 20 1.4 1.4 +6.0 +5.5 1.6 1.6 dB dB dB dB dBm dBm
Schematic per LNA Application; T=25°C, RF=881MHz, VPD =2.8V, R1=1k Ω VCC =3.0V, ICC =7.6mA VCC =2.7V, ICC =7.5mA VCC =3.0V, ICC =7.6mA VCC =2.7V, ICC =7.5mA VCC =3.0V, ICC =7.6mA VCC =2.7V, ICC =7.5mA Schematic per LNA Application; T=25°C, RF=1950MHz, VPD =2.8V, R1=1k Ω 12.5 12.5 13 13 1.3 1.3 +16.5 +16.0 1.5 1.5 dB dB dB dB dBm dBm VCC =3.0V, ICC =6.4mA VCC =2.7V, ICC =6.3mA VCC =3.0V, ICC =6.4mA VCC =2.7V, ICC =6.3mA VCC =3.0V, ICC =6.4mA VCC =2.7V, ICC =6.3mA Schematic per Driver Amplifier Application; T=25°C, RF=836MHz, VPD =2.8V 19.5 19.5 19.5 20.5 20.5 20.5 +32.0 +29.0 +27.8 21.5 21.5 21.5 35 dB dB dB dBm dBm dBm 2.0 2.0 2.0 dB dB dB dB dB dB 2.0:1 VCC =3.5V VCC =3.0V VCC =2.7V VCC =3.5V VCC =3.0V VCC =2.7V VCC =3.5V VCC =3.0V VCC =2.7V VCC =3.5V VCC =3.0V VCC =2.7V
Low Noise Amplifier 1950MHz Performance
Gain Noise Figure Input IP3
Driver Amplifier 836MHz Performance
Gain
Output IP3
25
Noise Figure
1.9 1.85 1.8
Reverse Isolation
25 25 25
Input VSWR
1.8:1
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Rev A10 DS070731
RF2361
Parameter
Driver Amplifier 836MHz Performance, cont.
Output VSWR P1dB 13 12 10.5 1.25:1 14.4 12.5 11.5 2.5 to 6.0 2.7 12.5 2.8 21.5 2.9 27 2.0:1 dBm dBm dBm V V mA VCC =3.5V; VPD =2.8V; VPD +VCC - Current Consumption from VPD is 2.0mA Typ. @ VPD =2.8V and 3.0mA Max @ VPD =2.9 V VCC =3.5V; VPD =2.7V; VPD + VCC VCC =3.5V; VPD =2.9V; VPD + VCC VCC =3.5V; VPD ≤ 0.9 V Schematic per Driver Amplifier Application; T=25°C, RF=1880MHz, VPD =2.8V 13.0 13.0 13.0 Output IP3 27 14.0 14.0 14.0 +35.0 +31.0 +28.8 Noise Figure 1.85 1.8 1.75 Reverse Isolation 19 19 19 Input VSWR Output VSWR P1dB 14 13 12 1.6:1 1.6:1 15.6 14.1 13.1 2.0:1 2.0:1 dBm dBm dBm Using External LC network used on evaluation board. VCC =3.5V VCC =3.0V VCC =2.7V 2.0 2.0 2.0 14.5 14.5 14.5 38 dB dB dB dBm dBm dBm dB dB dB dB dB dB VCC =3.5V VCC =3.0V VCC =2.7V VCC =3.5V VCC =3.0V VCC =2.7V VCC =3.5V VCC =3.0V VCC =2.7V VCC =3.5V VCC =3.0V VCC =2.7V Using External LC network used on evaluation board. VCC =3.5V VCC =3.0V VCC =2.7V T = 25 °C
Min.
Specification Typ.
Max.
Unit
Condition
Power Supply
Voltage (VCC) Voltage (VPD) Current Consumption Driver Amplifier
18 19 Power Down
20 23
22 29 10
mA mA μA
Driver Amplifier 1880MHz Performance
Gain
Rev A10 DS070731
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RF2361
Parameter
Power Supply
Voltage (VCC) Voltage (VPD) Current Consumption Driver Amplifier 2.7 11.5 2.5 to 6.0 2.8 19.5 2.9 25.5 V V mA VCC =3.5V; VPD =2.8V; VPD +VCC - Current Consumption from VPD is 2.0mA Typ.@ VPD =2.8V and 3.0mA Max @ VPD =2.9 V VCC =3.5V; VPD =2.7V; VPD + VCC VCC =3.5V; VPD =2.9V; VPD + VCC VCC =3.5V; VPD ≤ 0.9 V
Min.
Specification Typ.
Max.
Unit
T = 25 °C
Condition
16 18 Power Down
18 20.5
20 27 10
mA mA μA
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Rev A10 DS070731
RF2361
Pin 1 Function RF IN Description
RF input pin. This pin is DC coupled and matched to 50 Ω at 836 MHz.
Interface Schematic
To Bias Circuit RF OUT RF IN
2 3
GND1 VPD
Ground connection. Keep traces physically short and connect immediately to ground plane for best performance. For low noise amplifier applications, this pin is used to control the bias current. See plots for bias current settings. An external resistor (R1) can be used to set the bias current for any VPD voltage. For driver amplifier applications, this is the Power Down pin for the IC. VPD =2.8V +/- 0.1V is required for proper operation. VPD< 0.9V turns off the Part. External RF bypassing is required. The trace length between the pin and the bypass capacitors should be minimized. The ground side of the bypass capacitors should connect immediately to ground plane. Nominal current required for VPD =2.8V is 2.0mA typical and 3.0mA Max (@ VPD =2.9V).
PD
4
RF OUT
5
GND2
Amplifier Output pin. This pin is an open-collector output. It must be biased to either VCC or pin 4 through a choke or matching inductor. This pin is typically matched to 50 Ω with a shunt bias/matching inductor and series blocking/matching capacitor. Refer to application schematics. Ground connection. Keep traces physically short and connect immediately to ground plane for best performance.
Package Drawing
1.60 + 0.01 0.400
1
0.15 0.05
2.90 + 0.10
0.950
2.80 + 0.20 3° MAX 0° MIN 0.45 + 0.10 0.127
1.44 1.04
Dimensions in mm.
Rev A10 DS070731
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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RF2361
Application Schematic: Low Noise Amplifier ~881MHz Operation
J1 RF IN 22 nF 1 5
2 1k Ω VPD 10 nF 100 pF 3 4 12 nH VCC 100 pF 10 nF 2 pF
J2 RF OUT
Application Schematic: Low Noise Amplifier ~1950MHz Operation
J1 RF IN 22 nF 1 5
2 1k Ω VPD 10 nF 100 pF 3 4 3.3 nH VCC 100 pF 10 nF 1 pF
J2 RF OUT
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Rev A10 DS070731
RF2361
Application Schematic: Driver Amplifier ~836MHz Operation
J1 RF IN 22 nF 1 5
2 0Ω VPD 10 nF 100 pF 3 4 12 nH VCC 100 pF 10 nF 2 pF
J2 RF OUT
Application Schematic: Driver Amplifier ~1880MHz Operation
J1 RF IN 22 nF 1 5
2 0Ω VPD 10 nF 100 pF 3 4 3.3 nH VCC 100 pF 10 nF 1 pF
J2 RF OUT
Rev A10 DS070731
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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RF2361
Evaluation Board Schematic: Low Noise Amplifier ~881MHz Operation
P1 P1-1 1 2 3 C7 4.7μ F VPD GND VCC
J1 RF IN
50 Ω μ strip
C3 22 nF 1 5
2 R1 1k Ω VPD C1 10 nF C2 220 pF
2361410 Rev-
50 Ω μ strip 3 4 L1 12 nH
C4 2 pF
50 Ω μ strip
J2 RF OUT
VCC C5 220 pF C6 10 nF
Evaluation Board Schematic: Driver Amplifier ~836MHz Operation
P1 P1-1 1 2 3 C7 4.7μ F VPD GND VCC
J1 RF IN
50 Ω μ strip
C3 22 nF 1 5
2 R1 0Ω VPD C1 10 nF C2 220 pF
2361400 Rev-
50 Ω μ strip 3 4 L1 12 nH
C4 2 pF
50 Ω μ strip
J2 RF OUT
VCC C5 220 pF C6 10 nF
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Rev A10 DS070731
RF2361
Evaluation Board Layout - 900MHz Driver Board Size 0.948” x 1.063”
Board Thickness 0.031”; Board Material FR-4
Evaluation Board Layout - 900MHz LNA
Rev A10 DS070731
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RF2361
26.0 25.5 25.0 24.5 24.0 23.5
Driver Amp 836 MHz ICC versus VPD
2.7V Icc (mA) 3.0V Icc (mA) 3.3V Icc (mA) 3.6V Icc (mA)
20.92 20.90 20.88 20.86 20.84 20.82 20.80 20.78 20.76 20.74 20.72
Driver Amp 836 MHz Gain versus VPD
2.7V Gain (dB) 3.0V Gain (dB) 3.3V Gain (dB) 3.6V Gain (dB)
ICC (mA)
23.0 22.5 22.0 21.5 21.0 20.5 20.0 19.5 19.0 2.7 2.8 2.9 3.0
Gain (dB)
2.70
2.80
2.90
3.00
VPD
VPD
33.0
Driver Amp 836 MHz OIP3 versus VPD
2.7V OIP3 (dBm) 3.0V OIP3 (dBm) 3.3V OIP3 (dBm) 3.6V OIP3 (dBm)
15.0
Driver Amp 836 MHz POUT 1dB versus VPD
14.5 2.7V P 1dB (dBm) 3.0V P 1dB (dBm) 3.3V P 1dB (dBm) 3.6V P 1dB (dBm)
32.0
14.0 31.0
POUT 1dB (dBm)
13.5
OIP3 (dBm)
30.0
13.0
12.5
29.0 12.0 28.0 11.5
27.0 2.7 2.8 2.9 3.0
11.0 2.7 2.8 2.9 3.0
VPD
VPD
2.05
Driver Amp 836 MHz Noise Figure versus VPD
2.7V NF (dB) 3.0V NF (dB) 3.3V NF (dB) 3.6V NF (dB)
2.00
1.95
NF (dB)
1.90
1.85
1.80
1.75
1.70 2.70 2.80 2.90 3.00
VPD
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Rev A10 DS070731
RF2361
19.95
Low Noise Amplifier 881 MHz Gain versus ICC
2.7V Gain (dB) 3.0V Gain (dB) 3.3V Gain (dB) 3.6V Gain (dB)
29.0 28.5 28.0 27.5
Low Noise Amplifier 881 MHz OIP3 versus ICC
2.7V OIP3 (dBm) 3.0V OIP3 (dBm) 3.3V OIP3 (dBm) 3.6V OIP3 (dBm)
19.90
19.85
19.80
19.75
OIP3 (dBm)
6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00
Gain (dB)
27.0 26.5 26.0 25.5
19.70
19.65 25.0 19.60 24.5 24.0 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0
19.55 6.00
ICC
ICC (mA)
9.0 8.5 8.0 7.5
Low Noise Amplifier 881 MHz IIP3 versus ICC
2.7V IIP3 (dBm) 3.0V IIP3 (dBm) 3.3V IIP3 (dBm) 3.6V IIP3 (dBm)
13.5
Low Noise Amplifier 881 MHz POUT 1dB versus ICC
2.7V Pout 1dB (dBm) 3.0V Pout 1dB (dBm) 3.3V Pout 1dB (dBm) 3.6V Pout 1dB (dBm)
13.0
12.5
POUT 1dB (dBm)
IIP3 (dBm)
7.0 6.5 6.0 5.5
12.0
11.5
11.0
10.5 5.0 4.5 4.0 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.0
9.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0
ICC (mA)
ICC (mA)
1.42 1.41 1.40 1.39
Low Noise Amplifier 881 MHz Noise Figure versus ICC
2.7V NF (dB) 3.0V NF (dB) 3.3V NF (dB) 3.6V NF (dB)
NF (dB)
1.38 1.37 1.36 1.35 1.34 1.33 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00
ICC
Rev A10 DS070731
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RF2361
PCB Design Requirements
PCB Surface Finish The PCB surface finish used for RFMD's qualification process is electroless nickel, immersion gold. Typical thickness is 3 μinch to 8 μinch gold over 180 μinch nickel. PCB Land Pattern Recommendation PCB land patterns are based on IPC-SM-782 standards when possible. The pad pattern shown has been developed and tested for optimized assembly at RFMD; however, it may require some modifications to address company specific assembly processes. The PCB land pattern has been developed to accommodate lead and package tolerances. PCB Metal Land Pattern
A = 0.70 x 1.00 (mm) Typ.
Dimensions in mm.
Pin 1
Pin 5
A 0.95 Typ. A
A
1.90 Typ.
A
A
2.60
Figure 1. PCB Metal Land Pattern (Top View)
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Rev A10 DS070731
RF2361
PCB Solder Mask Pattern Liquid Photo-Imageable (LPI) solder mask is recommended. The solder mask footprint will match what is shown for the PCB metal land pattern with a 2mil to 3mil expansion to accommodate solder mask registration clearance around all pads. The center-grounding pad shall also have a solder mask clearance. Expansion of the pads to create solder mask clearance can be provided in the master data or requested from the PCB fabrication supplier.
A = 0.90 x 1.20 (mm) Typ.
Dimensions in mm.
Pin 1
Pin 5
A 0.95 Typ. A
A
1.90 Typ.
A
A
2.60
Figure 2. PCB Solder Mask (Top View)
RoHS* Banned Material Content
RoHS Compliant: Package total weight in gram Compliance Date Code: Bill of Materials Revision: Pb Free Category: No 0.015 N/A RevContains Pb Pa r ts Pe r Mi l l i o n (PPM) Pb 0 0 0 0 0 4753 Cd 0 0 0 0 0 0 Hg 0 0 0 0 0 0 Cr VI 0 0 0 0 0 0 PB B 0 0 0 0 0 0 PB DE 0 0 0 0 0 0
B i l l o f Ma te r i a l s Di e Mo l d i ng Co mp o und Le a d F r a m e Di e Atta ch Ep o x y Wi r e So l d e r Pl a ti ng
Thi s R o HS b a nne d ma te r i a l co nte nt de cl a r a ti o n wa s pr e p a r e d so l e l y o n i nfo r ma ti o n, i ncl ud i ng a na l y ti ca l d a ta , pr o v i de d to R F MD b y i ts sup p l i e r s, a nd a pp l i e s to the B i l l o f M a te r i a l s (B OM) r e vi si o n no te d * DIRECTIVE 2002/95/EC OF THE EUROPEAN PARLIAMENT AND OF THE COUNCIL of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
Rev A10 DS070731
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RF2361
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A10 DS070731