RF2364

RF2364 0 Typical Applications • CDMA PCS LNA • TDMA PCS LNA • W-CDMA/CDMA2000 LNA Product Description The RF2364 is a low noise amplifier with a high dynamic range designed for CDMA and TDMA PCS, as well as W-CDMA/CDMA2000 applications. The device functions as an outstanding front end low noise amplifier and the bias current can be set externally. The IC includes a power down feature used to completely turn-off the device and is featured in a standard SOT 5-lead plastic package. 1.60 + 0.01 0.400 1 3V PCS LOW NOISE AMPLIFIER • General Purpose Amplification • Commercial and Consumer Systems 0.15 0.05 2.90 + 0.10 0.950 2.80 + 0.20 3° MAX 0° MIN 0.45 + 0.10 0.127 1.44 1.04 Dimensions in mm. Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS Package Style: SOT 5-Lead Features • Low Noise and High Intercept Point • 18dB Gain • Power Down Control • Single 3.0V Power Supply • PCS and W-CDMA Band Operation • 1.8GHz to 2.5GHz Operation RF IN 1 5 RF OUT GND1 2 VPD 3 4 GND2 Ordering Information RF2364 RF2364 PCBA 3V PCS Low Noise Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A5 020827 4-357 RF2364 Absolute Maximum Ratings Parameter Supply Voltage Input RF Level Storage Temperature Rating -0.5 to +8.0 +10 -40 to +150 Unit VDC dBm °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter Operating Range Overall Frequency Range Supply Voltage (VCC) Power Down Voltage (VPD) Current Consumption Power Down Current Operating Ambient Temperature Input Impedance Output Impedance Specification Min. Typ. Max. 1930 2.7 2.7 1990 3.3 2.9 0.9 23.5 10 +85 Unit MHz V V V mA μA oC Condition 3.0 17.0 -40 50 50 For normal operation For power down operation VCC =3.0V, Values reflect ICC +IPD VCC =3.0V, VPD < 0.9V Ω Ω T=25oC Low Noise Amplifier Performance Power Gain Noise Figure Input IP3 Input VSWR Output VSWR Input P1dB 18 1.8 +5 21 dB dB dBm VCC =3.0V, ICC =17mA VCC =3.0V With external matching components. 2:1 2:1 -8.5 dBm 4-358 Rev A5 020827 RF2364 Pin 1 Function RF IN Description RF input pin. This pin is DC coupled and matched to 50 Ω. Interface Schematic To Bias Circuit RF OUT RF IN 2 3 GND1 VPD Ground connection. Keep traces physically short and connect immediately to ground plane for best performance. For low noise amplifier applications, this pin is used to control the bias current. See plots for bias current settings. An external resistor (R1) can be used to set the bias current for any VPD voltage (See Application Note). For driver amplifier applications, this is the Power Down pin for the IC. VPD =2.8V + 0.1V is required for proper operation. VPD< 0.9V turns off the Part. External RF bypassing is required. The trace length between the pin and the bypass capacitors should be minimized. The ground side of the bypass capacitors should connect immediately to ground plane. Nominal current required for VPD =2.8V is 2.0mA typical and 3.0mA Max (@ VPD =2.9V). Ground connection. Keep traces physically short and connect immediately to ground plane for best performance. Amplifier Output pin. This pin is an open-collector output. It must be biased to either VCC or pin 4 through a choke or matching inductor. This pin is typically matched to 50 Ω with a shunt bias/matching inductor and series blocking/matching capacitor. Refer to application schematics. PD 4 5 GND2 RF OUT Rev A5 020827 4-359 RF2364 Application Notes Power Down Pin Resistor The Power Down pin (pin 3) of the RF2364 3V Low Noise Amplifier should be maintained at 2.7V to 2.9V for proper operation. This voltage range ensures the correct bias current will be present at the Power Down pin of the device. However, an external series resistor may be used to allow various operating voltages at this pin (see R1 in Application Schematics). The required value for this resistor may be roughly calculated by using the operating input voltage to the Power Down pin, the desired voltage at the device, and the typical current consumption for the Power Down pin, along with Ohms law. For example, assume the design will supply 3.3V to the Power Down pin of the device, but the biasing circuitry internal to the RF2364 requires 2.8V, and the power down bias current is known to typically be 5.5mA, then the required value from R1 would be found from: 3.3 V – 2.8 V ---------------------------- = 90.9 Ω 5.5 mA 4-360 Rev A5 020827 RF2364 Application Schematic PCS Band VCC 10 nF 15 nF RF IN 1 5 4.7 nH RF OUT 1.5 pF 2 1.5 pF R1 VPD Optional See Application Notes 8.2 nH 3 10 nF 4 3.3 nH Application Schematic W-CDMA Band VCC 10 nF 47 pF RF IN 1 5 4.7 nH RF OUT 1 pF 2 R1 VPD Optional See Application Notes 8.2 nH 3 10 nF 4 Rev A5 020827 4-361 RF2364 Evaluation Board Schematic - PCS Band (Download Bill of Materials from www.rfmd.com.) P1 1 P1-2 2 GND VCC P2-2 P2 1 2 GND VPD VCC C2 10 nF C1 15 nF 1 5 C3 1.5 pF 2 L1 8.2 nH VPD C5 10 nF 2364400- J1 RF IN 50 Ω μstrip L2 4.7 nH C4 1.5 pF 50 Ω μstrip J2 RF OUT 3 4 L3 3.3 nH 4-362 Rev A5 020827 RF2364 Evaluation Board Layout Board Size 1” x 1” Board Thickness 0.031”; Board Material FR-4 Rev A5 020827 4-363 RF2364 Gain versus VCC 19.0 IIP3 versus VCC 6.5 VPD=2.8V, Frequency=1960MHz VPD=2.8V, Frequency=1960MHz 18.5 6.0 18.0 5.5 17.5 IIP3 (dBm) Gain (dB) 5.0 17.0 Gain, -30º Gain, 25º 4.5 16.5 Gain, 85º 4.0 16.0 3.5 IIP3, -30º IIP3, 25º IIP3, 85º 2.7 2.8 2.9 3.0 3.1 3.2 3.3 15.5 15.0 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.0 VCC (V) VCC (V) Noise Figure versus VCC 2.3 2.1 1.9 1.7 Input P1dB versus VCC -7.9 -8.0 -8.1 -8.2 VPD=2.8V, Frequency=1960MHz VPD=2.8V, Frequency=1960MHz Input P1dB (dBm) -8.3 -8.4 -8.5 -8.6 P1dB, -30º P1dB, 25º P1dB, 85º NF (dB) 1.5 1.3 1.1 0.9 NF, -30º 0.7 0.5 2.7 2.8 2.9 3.0 3.1 3.2 3.3 NF, 25º NF, 85º -8.7 -8.8 -8.9 2.7 2.8 2.9 3.0 3.1 3.2 3.3 VCC (V) VCC (V) ICC versus VCC 9.2 Gain versus VPD 19.00 VPD=2.8V, Frequency=1960MHz VCC=3.0V, Frequency=1960MHz 9.0 18.50 8.8 18.00 8.6 Gain (dB) ICC (mA) 17.50 Gain, -30º 17.00 Gain, 25º Gain, 85º 16.50 8.4 Icc, -30º 8.2 Icc, 25º Icc, 85º 8.0 7.8 16.00 7.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 15.50 2.70 2.75 2.80 2.85 2.90 VCC (V) VPD (V) 4-364 Rev A5 020827 RF2364 IIP3 versus VPD 6.00 5.80 2.00 5.60 5.40 1.80 NF, -30º NF, 25º NF, 85º Noise Figure versus VPD 2.20 VCC=3.0V, Frequency=1960MHz VCC=3.0V, Frequency=1960MHz IIP3 (dBm) 5.20 NF (dB) IIP3, -30º IIP3, 25º IIP3, 85º 2.75 2.80 2.85 2.90 5.00 4.80 1.60 1.40 4.60 4.40 1.20 4.20 4.00 2.70 1.00 2.70 2.75 2.80 2.85 2.90 VPD (V) VPD (V) P1dB versus VPD -7.40 -7.60 -7.80 -8.00 IPD versus VPD 6.00 5.80 5.60 5.40 5.20 VCC=3.0V, Frequency=1960MHz VCC=3.0V, Frequency=1960MHz Input P1dB (dBm) -8.20 -8.40 -8.60 -8.80 -9.00 -9.20 -9.40 2.70 2.75 2.80 2.85 2.90 P1dB, -30º P1dB, 25º P1dB, 85º IPD (mA) 5.00 4.80 4.60 4.40 4.20 4.00 2.70 2.75 2.80 2.85 2.90 Ipd, -30º Ipd, 25º Ipd, 85º VPD (V) VPD (V) Gain versus Frequency 19.0 Input Impedance versus Frequency 1.85 VCC=3.0V, VPD=2.8V VCC=3.0V, VPD=2.8V 18.5 1.80 18.0 1.75 17.5 Gain, -30º 17.0 Gain, 25º Gain, 85º Input VSWR Gain (dB) 1.70 1.65 S11, -30º 16.5 1.60 S11, 25º S11, 85º 16.0 1930.0 1940.0 1950.0 1960.0 1970.0 1980.0 1990.0 1.55 1930.00 1940.00 1950.00 1960.00 1970.00 1980.00 1990.00 Frequency (MHz) Frequency (MHz) Rev A5 020827 4-365 RF2364 Output Impedance versus Frequency 1.55 VCC=3.0V, VPD=2.8V 1.50 S22, -30º Output VSWR 1.45 S22, 25º S22, 85º 1.40 1.35 1.30 1930.00 1940.00 1950.00 1960.00 1970.00 1980.00 1990.00 Frequency (MHz) 4-366 Rev A5 020827