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RF2365

RF2365

  • 厂商:

    RFMD(威讯)

  • 封装:

  • 描述:

    RF2365 - 3V LOW NOISE AMPLIFIER - RF Micro Devices

  • 数据手册
  • 价格&库存
RF2365 数据手册
RF2365 4 Typical Applications • DCS GSM • PCS CDMA • PCS TDMA • 2.4GHz Systems • General Purpose Amplification • Commercial and Consumer Systems 3V LOW NOISE AMPLIFIER Product Description The RF2365 is a low noise amplifier with a high dynamic range designed for the receive front end of digital cellular applications at PCS/DCS frequencies. It is designed to amplify low level signals with minimum noise contribution while operating in the harsh, interference-rich environments of newly deployed digital subscriber units. The part provides excellent performance as a LNA for 2.4GHz radio applications. The IC is featured in a standard SOT5-lead plastic package. 1.60 + 0.01 0.400 1 4 GENERAL PURPOSE AMPLIFIERS 0.15 0.05 2.90 + 0.10 0.950 2.80 + 0.20 3° MAX 0° MIN 0.45 + 0.10 0.127 1.44 1.04 Dimensions in mm. Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ! Package Style: SOT 5-Lead GaAs HBT SiGe HBT GaAs MESFET Si CMOS Features • 1.6dB Noise Figure @ 1850MHz • 1.75dB Noise Figure @ 2450MHz • 18.0dB Gain at PCS/DCS RF IN 1 5 RF OUT • 15.5dB Gain at 2.45GHz • External Bias Control • Extremely Small SOT23-5 Package GND1 2 PD 3 4 GND2 Ordering Information RF2365 RF2365 PCBA 3V Low Noise Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A4 001201 4-215 RF2365 Absolute Maximum Ratings Parameter Supply Voltage Input RF Level Operating Ambient Temperature Storage Temperature Rating -0.5 to +8.0 +10 -40 to +85 -40 to +150 Unit VDC dBm °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter Overall Specification Min. Typ. Max. 1500 2500 Unit MHz Condition 4 GENERAL PURPOSE AMPLIFIERS RF Frequency Range PCS Performance Gain Noise Figure Off Mode Gain |S12| Input IP3 16 18 1.6 -15 25 -3.5 +2.0 +4.0 Output IP3 Input VSWR Output VSWR 20.0 22.0 1.7 1.4 28.0 20 dB dB dB dB dBm dBm dBm dBm Schematic per 1.9GHz LNA Application Schematic, VPD = 3.0 VCC = 3.0V, T=25°C VCC =3.0V, ICC =8.0mA VCC =3.0V, VPD =0 VCC =3.0V, ICC =5.0mA, R1 =150 Ω (see application schematic) VCC =3.0V, ICC =6.5mA, R1 =75 Ω (see application schematic) VCC =3.0V, ICC =8.0mA, R1 =0 Ω (see application schematic) VCC =3.0V, ICC =8.0mA, R1 =0 Ω (see application schematic) 2.4GHz Performance Gain Noise Figure Input IP3 Input VSWR Output VSWR 15.5 1.75 +2.0 1.3 1.75 3 8.0 6.5 5.0 dB dB dBm Schematic per 2.4GHz LNA Application Schematic T=25°C VCC =3.0V, ICC =8.0mA VCC =3.0V, ICC =8.0mA Power Supply Voltage (VCC) Current Consumption 5.0 11.0 V mA mA mA µA T = 25 °C VCC =3.0V, IIP3=+4.0dBm VCC =3.0V, IIP3=+2.0dBm VCC =3.0V, IIP3=-3.5dBm VCC =3.0V; VPD ≤ 0.9V Power Down 0 1 4-216 Rev A4 001201 RF2365 Pin 1 Function RF IN Description RF input pin. This pin is DC coupled. To Bias Circuit RF IN GND1 Interface Schematic PD 2 3 GND1 PD Ground connection. See evaluation board schematic notes. Power down pin. This pin serves as the interstage for the 2-stage LNA. An inductor is required to pull pin 3 to VCC (see application schematic). If desired, this voltage can be lowered to trade off IP3 versus ICC,TOTAL. (See table below.) PD To RF Stages 4 GENERAL PURPOSE AMPLIFIERS 4 5 GND2 RF OUT Ground connection. See evaluation board schematic notes. Amplifier Output pin. This pin is an open-collector output. It must be biased to either VCC or pin 4 through a choke or matching inductor. This pin is typically matched to 50 Ω with a shunt bias/matching inductor and series blocking/matching capacitor. Refer to application schematics. To Bias Circuit GND2 R1 0Ω 75 Ω 150 Ω IIP3 +4.0dBm +2.0dBm -3.5dBm ICC 8.0mA 6.5mA 5.0mA Rev A4 001201 4-217 RF2365 Application Schematic - 1.9GHz 47 pF VCC 3.9 nH RF IN 22 nF 1 5 1 pF 2 0Ω EN 47 pF 3.3 nH 3 4 RF OUT 4 GENERAL PURPOSE AMPLIFIERS Application Schematic - 2.4GHz NOTES: * R1 is left open. 22 pF VCC 3.9 nH RF IN 22 nF 2 2.2 nH EN 22 pF R1* 3 4 1 5 1.5 pF RF OUT 4-218 Rev A4 001201 RF2365 Evaluation Board Schematic - 1.9GHz (Download Bill of Materials from www.rfmd.com.) P1 1 P 1 -2 2 GND VCC P 2 -2 C1 22 nF 1 P2 1 2 GND EN 2365400, Rev A C2 47 pF L2 3 .9 n H 5 C4 1 pF C3 10 nF VCC J1 R F IN 5 0 Ω µstrip 5 0 Ω µstrip J2 RF OUT * R1 0Ω EN C6 10 nF C5 47 pF L1 3 .3 n H 2 4 4 * 3 NOTES: *G ro u n d tra ce s o n p in s 2 a n d 4 a re e q u iva le n t to a 1 .8 n H in d u cto r. If a n in d u cto r is n o t u se d , th e d im e n sio n s a re a s fo llo w s: L e n g th = 1 4 0 m ils W id th = 2 0 m ils H e ig h t = 3 1 m ils fro m th e g o u n d p la n e . D ie le ctric is F R -4 . Evaluation Board Schematic - 2.4GHz P1 1 P 1-2 2 GND VCC P 2-2 C1 22 nF 1 P2 1 2 GND EN 2 36 54 01 , R e v - C2 22 pF L2 3.9 nH 5 C4 1.5 pF C3 10 nF VCC J1 R F IN 50 Ω µstrip 50 Ω µstrip J2 RF O UT ** L1 2.2 nH EN C6 10 nF C5 22 pF R 1* 2 3 4 N OTES: * R 1 is left o p en . **G ro u nd trace o n p in 2 is e qu iva le nt to a 1.0 n H in d ucto r. If a n in du ctor is n ot u se d, th e dim e nsio ns a re a s fo llo w s: L en g th = 8 5 m ils W idth = 2 0 m ils H eig ht = 3 1 m ils from th e go u nd p la n e. D ie le ctric is F R -4 . Rev A4 001201 4-219 GENERAL PURPOSE AMPLIFIERS RF2365 Evaluation Board Layout Board Size 1” x 1” 1.9GHz Board Thickness 0.031”; Board Material FR-4 4 GENERAL PURPOSE AMPLIFIERS 2.4GHz 4-220 Rev A4 001201 RF2365 Gain versus Frequency and VCC (Temp = +25°C, RF IN = -36 dBm) 18.80 18.60 18.40 18.20 Gain, 2.8V Gain, 3.0V Gain, 3.2V 19.20 19.00 18.80 18.60 18.40 18.20 18.00 Gain versus Frequency and Temp (VCC = 2.8 V, RF IN = -35 dBm) Gain, -40°C Gain, +25°C Gain, +85°C Gain (dB) 18.00 17.80 17.60 17.40 17.20 17.00 16.80 1805.00 1823.75 1842.50 1861.25 1880.00 Gain (dB) 17.80 17.60 17.40 17.20 17.00 16.80 16.60 16.40 16.20 16.00 1805.00 1823.75 1842.50 1861.25 1880.00 4 GENERAL PURPOSE AMPLIFIERS Frequency (MHz) Frequency (MHz) -2.20 -2.40 -2.60 -2.80 -3.00 -3.20 -3.40 -3.60 -3.80 -4.00 -4.20 -4.40 -4.60 -4.80 -5.00 -5.20 -5.40 -5.60 -5.80 -6.00 -6.20 -6.40 -6.60 -6.80 -7.00 -7.20 1805.00 Input P1dB versus Frequency and VCC (Temp = +25°C) IP1dB, 2.8V IP1dB, 3.0V IP1dB, 3.2V -2.80 -3.00 -3.20 -3.40 -3.60 -3.80 -4.00 -4.20 -4.40 -4.60 -4.80 -5.00 -5.20 -5.40 -5.60 -5.80 -6.00 -6.20 -6.40 -6.60 -6.80 -7.00 -7.20 -7.40 -7.60 -7.80 -8.00 1805.00 Input P1dB versus Frequency and Temp (VCC = 2.8 V) IP1dB, -40°C IP1dB, +25°C IP1dB, +85°C Input P1dB (dBm) 1823.75 1842.50 1861.25 1880.00 Input P1dB (dBm) 1823.75 1842.50 1861.25 1880.00 Frequency (MHz) Frequency (MHz) 7.50 7.00 6.50 6.00 5.50 5.00 IIP3 versus Frequency and VCC (Temp = +25°C) IIP3, 2.8V IIP3, 3.0V IIP3, 3.2V 4.50 4.00 3.50 3.00 2.50 2.00 1.50 1.00 0.50 1805.00 1823.75 1842.50 1861.25 1880.00 6.00 5.50 5.00 4.50 4.00 3.50 3.00 2.50 2.00 1.50 1.00 0.50 0.00 -0.50 -1.00 -1.50 -2.00 -2.50 -3.00 -3.50 -4.00 -4.50 1805.00 IIP3 versus Frequency and Temp (VCC = 2.8 V) IIP3, -40°C IIP3, +25°C IIP3, +85°C IIP3 (dBm) IIP3 (dBm) 1823.75 1842.50 1861.25 1880.00 Frequency (MHz) Frequency (MHz) Rev A4 001201 4-221 RF2365 ICC versus VCC and Temp 10.50 10.00 9.50 9.00 Icc, -40°C Icc, +25°C Icc, +85°C 1.33 1.34 Noise Figure versus Frequency and VCC (Temp = Ambient) NF, 2.8V NF, 3.0V NF, 3.2V ICC (mA) 8.00 7.50 7.00 6.50 Noise Figure (dB) 8.50 1.32 1.31 1.30 4 GENERAL PURPOSE AMPLIFIERS 6.00 5.50 5.00 4.50 2.80 3.00 3.20 1.28 1805.00 1823.75 1842.50 1861.25 1880.00 1.29 VCC Frequency (MHz) Input/Output Impedance @ 2.8 V 1.0 0.6 Swp Max 3.5GHz 2. 0 0.8 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0 -0 .4 -0. 6 .0 -2 Swp Min 0.1GHz -0.8 4-222 -1.0 -5.0 -0.2 -10.0 -4. 0 -3 .0 0. 4 0.2 3.0 4.0 5.0 10.0 S[1,1] S[2,2] Rev A4 001201
RF2365 价格&库存

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