Preliminary 4
Typical Applications • GSM Handsets • CDMA Handsets • TDMA Handsets • IF or RF Buffer Amplifiers
RF2371
3V LOW NOISE AMPLIFIER
• Driver Stage for Power Amplifiers • Oscillator Loop Amplifiers
Product Description
The RF2371 is a general purpose, low-cost, high performance low noise amplifier designed for operation from a 2.7V to 4V supply with low current consumption. The attenuation of the device is controlled when in power down mode, providing a known gain step. The RF2371 is available in a small industry-standard SOT23-8 surface mount package, enabling compact designs which conserve board space. The design features a highly accurate PTAT (Proportional To Absolute Temperature) biasing scheme using bandgap cells.
1.59 1.61 0.365 0.15 0.05
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GENERAL PURPOSE AMPLIFIERS
0.127
TEXT*
2.80 3.00
0.650 2.60 3.00 *When Pin 1 is in upper left, text reads downward (as shown). 3°MAX 0°MIN 1.44 1.04
0.35 0.55
Optimum Technology Matching® Applied
Package Style: SOT23-8
üSi Bi-CMOS
Si BJT
GaAs HBT SiGe HBT
GaAs MESFET Si CMOS
Features • 700MHz to 2000MHz Operation • 2.7V to 3.6V Single Supply • +5dBm Input IP3 at 3.0mA • 12dB Gain at 1950MHz • 1.8dB Noise Figure at 1950MHz • 17dB Gain Step
RF IN
1
8 7 6 Bias Circuits 5
RF OUT ISET VCC ENABLE
GND1 2 GND2 3 IPSET 4
Ordering Information
RF2371 RF2371 PCBA 3V Low Noise Amplifier Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA
Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com
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RF2371
Absolute Maximum Ratings Parameter
Supply Voltage Supply Current Operating Ambient Temperature Storage Temperature
Preliminary
Rating
4.0 20 -40 to +85 -40 to +150
Unit
V mA °C °C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
Parameter
Specification Min. Typ. Max.
Unit
Condition
T=27° C, VCC =2.7V, VISELECT =0V, VENABLE =2.7V
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GENERAL PURPOSE AMPLIFIERS
Overall
Frequency Range 700 to 2000 10.5 +4 12.5 1.6 +6 -14 5:1 1.5:1 -5.0 17 1.6 0 CMOS Low CMOS High 1 CMOS High CMOS Low 1 2.7 to 3.6 2.9 MHz
LNA Performance
Gain Noise Figure Input IP3 Input P1dB Input VSWR Output VSWR Off Mode Gain Gain Noise Figure Input IP3 dB dB dBm dBm dB dB dB dB dB dBm V V µA V V µA V mA µA
Freq=1.95GHz
At 2.9mA (Noise match) VENABLE =0V Freq=836MHz
Current Control
Internal Current Setting “ON” External Current Setting “ON” Current into ISELECT Voltage on ISELECT Voltage on ISELECT VISELECT =2.7V Voltage on ENABLE Voltage on ENABLE VENABLE =2.7V
Power Control
Power “ON” Voltage Power “OFF” Voltage Current into ENABLE
Power Supply
Operating Voltage Operating Current Leakage Current 5 1 VCC =2.7V, Internal current setting VENABLE =0V
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Preliminary
Pin 1 2 3 4 5 6 7 8 Function RF IN GND1 GND2 IPSET ENABLE VCC ISET RF OUT Description
RF input pin. This pin is not internally DC blocked and requires an external blocking capacitor. Ground connection for the LNA. Keep traces physically short and connect immediately to ground plane for best performance. Ground connection for the bias circuits. This pin selects the internal current setting when CMOS level “low”, and the external current setting when this pin is CMOS level “high”. Power down control. This is a CMOS input. When this pin is CMOS “high” the device is enabled. When the level is CMOS “low” the device is shut off and a controlled attenuator is turned on. Power supply for the bias circuits. This pin sets the current for the device. RF output pin. Bias for the LNA is provided through this pin, hence it should be connected to VCC through an inductor.
RF2371
Interface Schematic
4
GENERAL PURPOSE AMPLIFIERS
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RF2371
Application Information
Preliminary
The RF2371 may be configured to use either the internal current setting or the external current setting. This choice is made by asserting IPSET, pin 4, to CMOS level “low” for the internal current setting or CMOS level “high” for the external current setting. Internal Current Setting When IPSET is set to CMOS “low”, the internal current settings are chosen. This current draw is typically 2.9mA. In this mode, the resistorR1 may be removed from the evaluation board schematic and ISET left floating. The condition for optimal IP3 is to use the internal current setting option and leave the ISET pin open (no connect).
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GENERAL PURPOSE AMPLIFIERS
External Current Setting The external current setting is configured by using the series resistor between ISET, pin7, and ground (refer to resistor R1 in evaluation board schematic). The value of the resistor may be changed to permit various operating currents up to a maximum allowable current of 20mA. The table below gives approximate minimum R1 values to allow the 20mA maximum current draw at various operating voltages.
Note: When the internal current setting was selected, the part tested drew 4.4mA, which is higher than typical (2.9mA). Thus values of R1 given vary from part to part. VCC (V) Resistor R1 (Ω) Current Draw (mA) 2.7 2.4k 20.1 3.0 2.7k 20.1 3.3 3.0k 20.0 3.6 3.3k 19.8
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Preliminary
Application Schematic 1.95GHz
VCC
RF2371
22 nF RF IN 10 nF 1 2 3 Bias Circuits IPSET 4 5 8
3.3 nH
1.5 pF RF OUT 1k Ω
7 VCC 6 ENABLE
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GENERAL PURPOSE AMPLIFIERS
Application Schematic 836MHz
VCC
22 nF RF IN 82 nH 1 2 3 Bias Circuits IPSET 4 5 8
18 nH
1 pF RF OUT 1k Ω
7 VCC 6 ENABLE
Rev A2 010205
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RF2371
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
Preliminary
VCC
J2 LNA INPUT
C1 22 nF 1 L2 10 nH 2 3 Bias Circuits 8 7 6 5
L1 3.9 nH
C2 1.5 pF
J1 LNA OUTPU
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GENERAL PURPOSE AMPLIFIERS
IPSET
R1 Ω 1k
VCC ENABLE
4
2371400-
IPSET
ENABLE
VCC
P1 1 2
VCC ENABLE IPSET
+ ENVCC -
2.6 V
C3 1 nF
C4 1 uF
+
C5 22 nF
+ VCC 2.7 V
3
GND 4 CON4
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Preliminary
Evaluation Board Layout Board Size 0.833” x 1.009”
Board Thickness 0.031”, Board Material FR-4
RF2371
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GENERAL PURPOSE AMPLIFIERS
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RF2371
Preliminary
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GENERAL PURPOSE AMPLIFIERS
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