RF2376

Preliminary 0 Typical Applications • CDMA Cellular Handsets • TDMA Cellular Handsets RF2376 CELLULAR TDMA/CDMA LINEAR VARIABLE GAIN AMPLIFIER Product Description The RF2376 is a linear variable gain amplifier suitable for use in TDMA and CDMA systems in the cellular band. The features of this device include linear gain control, high gain, and low noise figure. The IC is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process and is featured in an industry-standard miniature 6-lead plastic SOT package. 1.80 1.40 0.50 0.35 0.10 MAX. TEXT* 1.90 3.10 2.70 3.00 2.60 Shaded lead is pin 1. Dimensions in mm. 0.90 0.70 1.30 1.00 9° 1° 0.25 0.10 0.37 MIN. *When Pin 1 is in upper left, text reads downward (as shown). Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS Package Style: SOT23-6 Features • 50dB Linear Gain Control Range • 27dB Maximum Gain • Single 2.7V to 3.3V Supply • 30mA Supply Current • High Linearity RF OUT 1 GND 2 GC 3 ATTEN 6 VCC 5 GND 4 RF IN • 7dB Noise Figure Ordering Information RF2376 RF2376 PCBA Cellular TDMA/CDMA Linear Variable Gain Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A2 010829 4-423 RF2376 Absolute Maximum Ratings Parameter Supply Voltage DC Current Operating Ambient Temperature Storage Temperature Preliminary Rating 0 to +5.0 100 -20 to +85 -40 to +150 Unit VDC mA °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter Overall Operating Frequency Usable Frequency Range Maximum Small Signal Gain Linear Gain Control Range Gain Control Slope Input VSWR Output IP3 Noise Figure Maximum Average Output Power Adjacent Channel Power Rejection Alternate Channel Power Rejection Maximum Average Output Power Adjacent Channel Power Rejection Specification Min. Typ. Max. 836 800 to >1000 27 70 1.5:1 +25 7 +8 -33 -61 +10 -53 Unit MHz MHz dB dB dB/V dBm dB dBm dBc dBc dBm dBc Condition VCC =2.8V, VGC =2.0V, T=25°C 24 50 30 2.5:1 Maximum gain. Over entire gain control range Maximum gain TDMA modulation TDMA modulation; POUT =+8dBm TDMA modulation; POUT =+8dBm CDMA modulation; VCC =3.0V, maximum gain setting, ACPR< -52dBc. CDMA modulation; VCC =3.0V. For PIN >-23dBm, adjustment of PIN is required to maintain ACPR performance over gain control range. For PIN < -23dBm, ACPR performance is maintained over entire gain control range. CDMA modulation; POUT =+10dBm, VCC =3.0V. T = 25°C Specifications Operating range VCC =2.8V, VGC =2.0V VCC =3.0V, VGC =2.0V VCC =2.8V, VGC =0.4V +22 -32 -57 Alternate Channel Power Rejection -67 dBc Power Supply Supply Voltage Gain Control Voltage Supply Current 2.8 2.7 to 3.3 0 to 2.0 30 34 V V V mA mA mA mA 25 40 18 1.5 VGC Current 4-424 Rev A2 010829 Preliminary Pin 1 2 3 Function RF OUT GND GC Description RF output pin. This pin is DC coupled and requires VCC through a bias inductor sized accordingly to provide a high pass transformation with a series capacitor. Ground connection. Keep traces physically short and connect immediately to ground plane for best performance. Analog gain control pin. This pin controls the gain of the IC. Minimum gain occurs at VGC