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RF2377

RF2377

  • 厂商:

    RFMD(威讯)

  • 封装:

  • 描述:

    RF2377 - PCS/CELLULAR TDMA/CDMA/W-CDMA LINEAR VARIABLE GAIN AMPLIFIER - RF Micro Devices

  • 数据手册
  • 价格&库存
RF2377 数据手册
RF2377 4 Typical Applications • CDMA PCS/Cellular Handsets • TDMA PCS/Cellular Handsets • W-CDMA Handsets PCS/CELLULAR TDMA/CDMA/W-CDMA LINEAR VARIABLE GAIN AMPLIFIER Product Description The RF2377 is a linear variable gain amplifier suitable for use in TDMA and CDMA systems in the cellular or PCS band and for W-CDMA systems. The features of this device include linear gain control, high gain, and high linearity. The IC is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process and is featured in an industry-standard miniature 6-lead plastic SOT package. 1.80 1.40 .50 .35 3.10 2.70 .10 MAX. 4 GENERAL PURPOSE AMPLIFIERS TEXT* 1.90 3.00 2.60 1.30 1.00 .90 .70 9° 1° All dimensions in mm. .25 .10 .37 MIN. *When Pin 1 is in upper left, text reads downward (as shown). Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ü Package Style: SOT23-6 GaAs HBT SiGe HBT GaAs MESFET Si CMOS Features • 50dB Linear Gain Control Range • 24dB Maximum Gain • Single 2.7V to 3.3V Supply • 45mA Supply Current RF OUT 1 GND 2 GC 3 ATT ATT 6 VCC • High Linearity 5 GND 4 RF IN Ordering Information RF2377 PCS/Cellular TDMA/CDMA/W-CDMA Linear Variable Gain Amplifier RF2377-410 PCBAFully Assembled Evaluation Board, PCS RF2377-411 PCBAFully Assembled Evaluation Board, W-CDMA Functional Block Diagram RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A9 010411 4-43 RF2377 Absolute Maximum Ratings Parameter Supply Voltage DC Current Operating Ambient Temperature Storage Temperature Rating 0 to +5.0 100 -20 to +85 -40 to +150 Unit VDC mA °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter Specification Min. Typ. Max. 800 to 2200 50 70 1880 24 1.5:1 +26 7 +8 -33 -61 Unit MHz dB dB/V Condition VCC =2.8V, VGC =2.0V, T=25°C 4 GENERAL PURPOSE AMPLIFIERS Overall Usable Frequency Range Linear Gain Control Range Gain Control Slope TDMA Operating Frequency Maximum Small Signal Gain Input VSWR Output IP3 Noise Figure Maximum Average Output Power Adjacent Channel Power Rejection Alternate Channel Power Rejection 22 +23 27 2.5:1 MHz dB VCC =2.8V, VGC =2.0V, T=25°C Over entire gain control range dBm dB dBm dBc dBc Maximum gain TDMA modulation TDMA modulation; POUT =+8dBm TDMA modulation; POUT =+8dBm VCC =2.8V, VGC =2.0V, T=25°C -32 -57 CDMA Operating Frequency Maximum Small Signal Gain Input VSWR Output IP3 Noise Figure Maximum Average Output Power Adjacent Channel Power Rejection 22 +23 1880 24 1.5:1 +26 7 +11 -53 27 2.5:1 MHz dB Over entire gain control range dBm dB dBm dBc Maximum gain CDMA modulation; VCC =3.0V, maximum gain setting, ACPR< -52dBc. CDMA modulation; VCC =3.0V. For PIN >-16dBm, adjustment of PIN is required to maintain ACPR performance over gain control range. For PIN < -16dBm, ACPR performance is maintained over entire gain control range. VCC =2.8V, T=25°C VGC =2.0V VGC =0.3V Over entire gain control range Maximum gain Minimum gain W-CDMA ACPR
RF2377 价格&库存

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