RF2480PCBA

RF2480Direct Quadrature Modulator RF2480 DIRECT QUADRATURE MODULATOR RoHS Compliant & Pb-Free Product Package Style: SOIC-16 Features Typical Carrier Suppression>35dBc over temperature with highly linear operation Single 5V Power Supply Integrated RF quadrature network Digitally controlled Power Down mode 800MHz to 2500MHz operation I REF Q REF GND2 GND2 GND2 LO VCC1 PD 1 2 3 4 5 6 7 8 POWER CONTROL 16 15 14 I SIG Q SIG GND1 GND1 GND1 VCC2 GND1 RF OUT Σ 13 12 11 10 9 -45° +45° Applications Dual-Band CDMA Base Stations TDMA/TDMA-EDGE Base Stations GSM-EDGE/EGSM Base Stations W-CDMA Base Stations WLAN and WLL Systems TETRA Systems Functional Block Diagram Product Description The RF2480 is a monolithic integrated quadrature modulator IC capable of universal direct modulation for high-frequency AM, PM, or compound carriers. This low-cost IC features excellent linearity, noise floor, and over-temperature carrier suppression performance. The device implements differential amplifiers for the modulation inputs, 90° carrier phase shift network, carrier limiting amplifiers, two matched double-balanced mixers, summing amplifier, and an output RF amplifier which will drive 50 Ω from 800MHz to 2500MHz. Component matching is used to obtain excellent amplitude balance and phase accuracy. Ordering Information RF2480 RF2480 PCBA Direct Quadrature Modulator Fully Assembled Evaluation Board Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Rev A4 DS060329 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 8 RF2480 Absolute Maximum Ratings Parameter Supply Voltage Input LO and RF Levels Operating Ambient Temperature Storage Temperature Rating -0.5 to +7.5 +10 -40 to +85 -40 to +150 Unit VDC dBm °C °C Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Parameter Carrier Input Frequency Range Power Level Input VSWR Min. 800 -6 Specification Typ. Max. 2500 +6 Unit MHz dBm Condition T=25°C, VCC =5V 4.5:1 2:1 2:1 At 900MHz unmatched At 1800MHz unmatched At 2500MHz unmatched 250 MHz V VREF ±1.0 V dB ° kΩ 40 μA LO=800MHz, -5dBm; SSB dBm dBm dBc dBm dBc dBc dBc dBc dBc -145 dBm/Hz TETRA I&Q Amplitude=2VPP Over operating temperature. TETRA I&Q Amplitude=1.1VPP with an ACPR of -47dBc. Over operating temperature. TETRA modulation applied with POUT =-5dBm. Over operating temperature. Over operating temperature. 2kHz offset (9kHz, 11kHz) at -6dBm/tone. Over operating temperature. 2kHz offset (9kHz, 11kHz) at -6dBm/tone. Over operating temperature. 2kHz offset (9kHz, 11kHz) at -6dBm/tone. Over operating temperature. Unadjusted performance. Unadjusted performance. 26MHz offset with TETRA signal applied POUT =-5dBm. Modulation Input Frequency Range Reference Voltage (VREF) Maximum Modulation (I&Q) Gain Asymmetry Quadrature Phase Error Input Resistance Input Bias Current 0.2 3 30 DC 3.0 RF Output (~800MHz) Maximum Output Power High-Linearity Output Power Adjacent Channel Power Rejection Output P1dB IM3 Suppression IM5 Suppression IM7 Suppression Carrier Suppression Sideband Suppression Broadband Noise Floor -3 -6 -47 +2 -39 -49 -49 -25 -25 0 -5 -52 +3 -40 -59 -71 -30 -30 -150 +2 2 of 8 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A4 DS060329 RF2480 Parameter RF Output (~900MHz) Maximum Output Power High-Linearity Output Power Carrier Suppression 50 35 0 +4 -11 dBm dBm dB dB Min. Specification Typ. Max. Unit Condition LO=880MHz, -5dBm; SSB I&Q Amplitude=2VPP I&Q Amplitude=0.325VPP T=25°C; POUT =-11dBm (meets CDMA base station requirements); optimized I,Q DC offsets Over Temperature (Temperature cycled from 40°C to +85°C after optimization at T=25°C; POUT =-11dBm) T=25°C; POUT =-11dBm; optimized I,Q DC offsets Over Temperature (Temperature cycled from 40°C to +85°C after optimization at T=25°C; POUT =-11dBm) At 20MHz offset, VCC =5V; Tied to VREF: ISIG, QSIG, IREF, and QREF. LO=2000MHz, -5dBm; SSB I&Q Amplitude=2VPP I&Q Amplitude=0.325VPP T=25°C; POUT =-17dBm; optimized I,Q DC offsets Temperature cycled from -40°C to +85°C after optimization at T=25°C; POUT =-17dBm T=25°C; POUT =-17dBm; optimized I,Q DC offsets Temperature cycled from -40°C to +85°C after optimization at T=25°C; POUT =-17dBm At 20MHz offset, VCC =5V; Tied to VREF: ISIG, QSIG, IREF, and QREF. Sideband Suppression 50 35 dB dB Output Impedance Broadband Noise Floor 13-j:25 -153.0 Ω dBm/Hz RF Output (~2000MHz) Maximum Output Power High-Linearity Output Power Carrier Suppression 50 35 Sideband Suppression 50 40 Output Impedance Broadband Noise Floor 58-j11 -158.0 -7 -3 -17 dBm dBm dB dB dB dB Ω dBm/Hz Power Down Turn On/Off Time PD Input Resistance Power Control “ON” Power Control “OFF” 1.0 1.2 5 4.5 Current 50 25 6.0 50 2.8 100 ns kΩ V V V V mA μA Threshold voltage Threshold voltage Specifications Operating Limits Operating Power Down Power Supply Voltage Rev A4 DS060329 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 3 of 8 RF2480 Pin 1 Function I REF Description Reference voltage for the I mixer. This voltage should be the same as the DC voltage supplied to the I SIG pin. A voltage of 3.0V is recommended. The SIG and REF inputs are inputs of a differential amplifier. Therefore the REF and SIG inputs are interchangeable. If swapping the I SIG and I REF pins, the Q SIG and Q REF also need to be swapped to maintain the correct phase. It is also possible to drive the SIG and REF inputs in a balanced mode. This will increase the gain. For optimum carrier suppression, the DC voltages on I REF, Q REF, I SIG and Q SIG should be adjusted slightly to compensate for inherent undesired internal DC offsets; for optimum sideband suppression, phase and signal amplitude on IREF, Q REF, I SIG and Q SIG should be adjusted slightly to compensate for inherent undesired internal offsets. See RFMD AN0001 for more detail. Reference voltage for the Q mixer. This voltage should be the same as the DC voltage supplied to the Q SIG pin. A voltage of 3.0V is recommended. See pin 1 for more details. Interface Schematic I SIG 100 Ω I REF 100 Ω 425 Ω 425 Ω 2 Q REF Q SIG 100 Ω Q REF 100 Ω 425 Ω 425 Ω 3 4 5 6 7 8 GND2 GND2 GND2 LO VCC1 PD Ground connection of the LO phase shift network. This pin should be connected directly to the ground plane. Same as pin 3. Same as pin 3. The input of the phase shifting network. This pin has an internal DC blocking capacitor. This port is voltage driven so matching at different frequencies is not required. Power supply for all circuits except the RF output stage. An external capacitor is needed if no other low frequency bypass capacitor is nearby. Power Down control. When this pin is "low", all circuits are shut off. A "low" is typically 1.2V or less at room temperature.When this pin is "high" (VCC), all circuits are operating normally. If PD is below VCC, output power and performance will be degraded. Operating in this region is not recommended, although it might be useful in some applications where power control is required. RF Output. This pin has an internal DC blocking capacitor. At some frequencies, external matching may be needed to optimize output power. L O V CC 200 Ω PD 9 RF OUT RF OUT 10 11 12 13 14 GND3 VCC2 GND1 GND1 GND1 Ground connection for the RF output stage. This pin should be connected directly to the ground plane. Power supply for the RF output amplifier. An external capacitor is needed if no other low frequency bypass capacitor is near by. Ground connection for the LO and baseband amplifiers, and for the mixers. This pin should be connected directly to the ground plane. Same as pin 12. Same as pin 12. 4 of 8 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A4 DS060329 RF2480 Pin 15 Function Q SIG Description Baseband input to the Q mixer. This pin is DC-coupled. Maximum output power is obtained when the input signal has a peak to peak amplitude of 2V; for highly linear operation, the input signal (and output power) must be reduced appropriately. The recommended DC level for this pin is 3.0V. The peak minimum voltage on this pin (VREF - peak modulation amplitude) should never drop below 2.0V. The peak maximum voltage on this pin (VREF + peak modulation amplitude) should never exceed 4.0V. See pin 1 for more details. Baseband input to the I mixer. This pin is DC-coupled. Maximum output power is obtained when the input signal has a peak to peak amplitude of 2V; for highly linear operation, the input signal (and output power) must be reduced appropriately. The recommended DC level for this pin is 3.0V. The peak minimum voltage on this pin (VREF - peak modulation amplitude) should never drop below 2.0V. The peak maximum voltage on this pin (VREF + peak modulation amplitude) should never exceed 4.0V. See pin 1 for more details. Interface Schematic Q SIG 100 Ω Q REF 100 Ω 425 Ω 425 Ω 16 I SIG I SIG 100 Ω I REF 100 Ω 425 Ω 425 Ω Package Drawing -A0.157 0.150 0.008 0.004 0.393 0.386 0.018 0.014 0.050 0.244 0.229 8° MAX 0° MIN 0.009 0.007 0.068 0.053 NOTES: 1. Shaded lead is Pin 1. 2. All dimensions are excluding mold flash. 3. Lead coplanarity - 0.005 with respect to datum "A". 0.034 0.016 Rev A4 DS060329 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 5 of 8 RF2480 Application Schematic DC-Coupled IREF 100 nF 1 2 100 nF 3 4 LO IN VCC 5 6 7 8 PD 100 nF POWER CONTROL Σ 16 15 14 13 12 11 10 9 100 nF I SIG Q SIG QREF VCC -45° +45° 100 nF RF OUT 6 of 8 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A4 DS060329 RF2480 Evaluation Board Schematic P1 P1-1 1 2 3 VCC GND NC P2-1 P2 1 2 3 REF GND NC 50 Ω μstrip P2-1 C1 100 nF 1 2 3 4 5 LO IN J1 P1-1 C2 100 nF 50 Ω μstrip 6 7 8 POWER CONTROL -45° +45° 16 15 14 Σ 13 12 11 10 50 Ω μstrip 9 50 Ω μstrip I SIG J4 Q SIG J3 C3 100 nF P1-1 RF OUT J2 2480400- Rev A4 DS060329 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 7 of 8 RF2480 Evaluation Board Layout Board Size 1.510” x 1.510” Board Thickness 0.031”, Board Material FR-4 8 of 8 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A4 DS060329