RF2480SR

RF2480 RF2480Direct Quadrature Modulator DIRECT QUADRATURE MODULATOR RoHS Compliant & Pb-Free Product Package Style: SOIC-16 1 16 I SIG Q REF 2 15 Q SIG GND2 3 14 GND1 GND2 4 13 GND1  GND2 5 12 GND1 LO 6 11 VCC2  10 GND1  9 RF OUT VCC1 PD   EW N Functional Block Diagram Product Description N The RF2480 is a monolithic integrated quadrature modulator IC capable of universal direct modulation for high-frequency AM, PM, or compound carriers. This low-cost IC features excellent linearity, noise floor, and over-temperature carrier suppression performance. The device implements differential amplifiers for the modulation inputs, 90° carrier phase shift network, carrier limiting amplifiers, two matched double-balanced mixers, summing amplifier, and an output RF amplifier which will drive 50 from 800MHz to 2500MHz. Component matching is used to obtain excellent amplitude balance and phase accuracy. N O T  8 POWER CONTROL R  7 FO  Dual-Band CDMA Base Stations TDMA/TDMA-EDGE Base Stations GSM-EDGE/EGSM Base Stations W-CDMA Base Stations WLAN and WLL Systems TETRA Systems -45° +45° Applications   ES IG  Typical Carrier Suppression>35dBc over temperature with highly linear operation Single 5V Power Supply Integrated RF quadrature network Digitally controlled Power Down mode 800MHz to 2500MHz operation D  S I REF Features Ordering Information RF2480 RF2480 PCBA GaAs HBT GaAs MESFET InGaP HBT Direct Quadrature Modulator Fully Assembled Evaluation Board Optimum Technology Matching® Applied SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. DS150909 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 8 RF2480 Input LO and RF Levels Unit -0.5 to +7.5 VDC +10 dBm Operating Ambient Temperature -40 to +85 °C Storage Temperature -40 to +150 °C Parameter Min. Specification Typ. Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Max. Carrier Input Unit S Supply Voltage Rating Condition N Absolute Maximum Ratings Parameter Frequency Range Power Level 800 2500 -6 +6 Input VSWR ES IG T=25°C, VCC =5V MHz dBm 4.5:1 At 900MHz unmatched At 1800MHz unmatched 2:1 Modulation Input DC 250 Reference Voltage (VREF) 3.0 VREF ±1.0 Maximum Modulation (I&Q) Gain Asymmetry 0.2 3 N Quadrature Phase Error 30 Input Bias Current RF Output (~800MHz) -3 O Output P1dB 0 At 2500MHz unmatched MHz V V dB ° k 40 A +2 dBm TETRA I&Q Amplitude=2VPP Over operating temperature. LO=800MHz, -5dBm; SSB -6 -5 dBm TETRA I&Q Amplitude=1.1VPP with an ACPR of -47dBc. Over operating temperature. -47 -52 dBc TETRA modulation applied with POUT =-5dBm. Over operating temperature. T High-Linearity Output Power FO Maximum Output Power R Input Resistance Adjacent Channel Power Rejection EW Frequency Range D 2:1 +2 +3 dBm Over operating temperature. -39 -40 dBc 2kHz offset (9kHz, 11kHz) at -6dBm/tone. Over operating temperature. IM5 Suppression -49 -59 dBc 2kHz offset (9kHz, 11kHz) at -6dBm/tone. Over operating temperature. IM7 Suppression -49 -71 dBc 2kHz offset (9kHz, 11kHz) at -6dBm/tone. Over operating temperature. Unadjusted performance. N IM3 Suppression Carrier Suppression -25 -30 dBc Sideband Suppression -25 -30 dBc Broadband Noise Floor 2 of 8 -150 -145 dBm/Hz Unadjusted performance. 26MHz offset with TETRA signal applied POUT =-5dBm. 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS150909 RF2480 Parameter Min. Specification Typ. 0 +4 dBm -11 dBm Max. Unit RF Output (~900MHz) LO=880MHz, -5dBm; SSB High-Linearity Output Power dB T=25°C; POUT =-11dBm (meets CDMA base station requirements); optimized I,Q DC offsets 35 dB Over Temperature (Temperature cycled from 40°C to +85°C after optimization at T=25°C; POUT =-11dBm) 50 dB T=25°C; POUT =-11dBm; optimized I,Q DC offsets 35 dB Over Temperature (Temperature cycled from 40°C to +85°C after optimization at T=25°C; POUT =-11dBm) Output Impedance 13-j:25 Broadband Noise Floor -153.0  dBm/Hz RF Output (~2000MHz) -3 High-Linearity Output Power -17 50 35 50 R 40 Output Impedance FO O Power Control “ON” T PD Input Resistance Power Control “OFF” Voltage dB T=25°C; POUT =-17dBm; optimized I,Q DC offsets dB Temperature cycled from -40°C to +85°C after optimization at T=25°C; POUT =-17dBm At 20MHz offset, VCC =5V; Tied to VREF: ISIG, QSIG, IREF, and QREF. ns k 1.2 5 6.0 50 25 DS150909 Temperature cycled from -40°C to +85°C after optimization at T=25°C; POUT =-17dBm  4.5 Current dB dBm/Hz 2.8 1.0 I&Q Amplitude=0.325VPP T=25°C; POUT =-17dBm; optimized I,Q DC offsets -158.0 100 I&Q Amplitude=2VPP dB 58-j11 50 N Power Supply N Sideband Suppression dBm EW Carrier Suppression dBm D -7 Turn On/Off Time At 20MHz offset, VCC =5V; Tied to VREF: ISIG, QSIG, IREF, and QREF. LO=2000MHz, -5dBm; SSB Maximum Output Power Power Down S Sideband Suppression I&Q Amplitude=0.325VPP 50 N Carrier Suppression I&Q Amplitude=2VPP ES IG Maximum Output Power Broadband Noise Floor Condition V Threshold voltage V Threshold voltage V Specifications V Operating Limits mA Operating A Power Down 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 3 of 8 RF2480 Pin 1 Function I REF Description Interface Schematic Reference voltage for the I mixer. This voltage should be the same as the DC voltage supplied to the I SIG pin. A voltage of 3.0V is recommended. The SIG and REF inputs are inputs of a differential amplifier. Therefore the REF and SIG inputs are interchangeable. If swapping the I SIG and I REF pins, the Q SIG and Q REF also need to be swapped to maintain the correct phase. It is also possible to drive the SIG and REF inputs in a balanced mode. This will increase the gain. I SIG I REF 100  100  Q REF Q SIG N 2 IG 100  8 PD Same as pin 3. The input of the phase shifting network. This pin has an internal DC blocking capacitor. This port is voltage driven so matching at different frequencies is not required. Power supply for all circuits except the RF output stage. An external capacitor is needed if no other low frequency bypass capacitor is nearby. Power Down control. When this pin is "low", all circuits are shut off. A "low" is typically 1.2V or less at room temperature.When this pin is "high" (VCC), all circuits are operating normally. If PD is below VCC, output power and performance will be degraded. Operating in this region is not recommended, although it might be useful in some applications where power control is required. RF Output. This pin has an internal DC blocking capacitor. At some frequencies, external matching may be needed to optimize output power. LO RF OUT V CC 2 0 0  PD N O T 9 ES VCC1 D 7 Ground connection of the LO phase shift network. This pin should be connected directly to the ground plane. Same as pin 3. EW GND2 GND2 LO 425  N 4 5 6 Q REF 100  425  R GND2 FO 3 425  S 425  For optimum carrier suppression, the DC voltages on I REF, Q REF, I SIG and Q SIG should be adjusted slightly to compensate for inherent undesired internal DC offsets; for optimum sideband suppression, phase and signal amplitude on IREF, Q REF, I SIG and Q SIG should be adjusted slightly to compensate for inherent undesired internal offsets. See RFMD AN0001 for more detail. Reference voltage for the Q mixer. This voltage should be the same as the DC voltage supplied to the Q SIG pin. A voltage of 3.0V is recommended. See pin 1 for more details. 10 GND3 11 VCC2 12 GND1 13 14 GND1 GND1 4 of 8 RF OUT Ground connection for the RF output stage. This pin should be connected directly to the ground plane. Power supply for the RF output amplifier. An external capacitor is needed if no other low frequency bypass capacitor is near by. Ground connection for the LO and baseband amplifiers, and for the mixers. This pin should be connected directly to the ground plane. Same as pin 12. Same as pin 12. 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS150909 RF2480 Pin 15 I SIG Description Interface Schematic Baseband input to the Q mixer. This pin is DC-coupled. Maximum output power is obtained when the input signal has a peak to peak amplitude of 2V; for highly linear operation, the input signal (and output power) must be reduced appropriately. The recommended DC level for this pin is 3.0V. The peak minimum voltage on this pin (VREF - peak modulation amplitude) should never drop below 2.0V. The peak maximum voltage on this pin (VREF + peak modulation amplitude) should never exceed 4.0V. See pin 1 for more details. Baseband input to the I mixer. This pin is DC-coupled. Maximum output power is obtained when the input signal has a peak to peak amplitude of 2V; for highly linear operation, the input signal (and output power) must be reduced appropriately. The recommended DC level for this pin is 3.0V. The peak minimum voltage on this pin (VREF - peak modulation amplitude) should never drop below 2.0V. The peak maximum voltage on this pin (VREF + peak modulation amplitude) should never exceed 4.0V. See pin 1 for more details. Q SIG Q REF 100  425  100  425  I SIG I REF 100  100  425  425  ES IG N S 16 Function Q SIG Package Drawing D -A- N 0.018 0.014 0.050 N O T FO R 0.393 0.386 0.008 0.004 EW 0.157 0.150 DS150909 0.068 0.053 0.244 0.229 8° MAX 0° MIN 0.034 0.016 0.009 0.007 NOTES: 1. Shaded lead is Pin 1. 2. All dimensions are excluding mold flash. 3. Lead coplanarity - 0.005 with respect to datum "A". 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 5 of 8 RF2480 Application Schematic DC-Coupled IREF 100 nF I SIG 2 15 Q SIG 3 14  4 LO IN 13 12 5 VCC 6 10 7 D POWER CONTROL 8 9 100 nF RF OUT EW PD VCC 11 -45° +45° 100 nF S 16 N 100 nF 1 ES IG QREF N O T FO R N 100 nF 6 of 8 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS150909 RF2480 Evaluation Board Schematic P1 P1-1 P2 1 VCC 1 REF 2 GND 2 GND 3 NC 3 NC P2-1 50  strip 2 15 3 14  4 13 5 6 P1-1 11 -45° +45° 7 C3 100 nF P1-1 10 D C2 100 nF Q SIG J3 12 50  strip LO IN J1 50  strip I SIG J4 S 16 N C1 100 nF 1 ES IG P2-1 POWER CONTROL 50  strip 9 RF OUT J2 2480400- N O T FO R N EW 8 DS150909 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 7 of 8 RF2480 Evaluation Board Layout Board Size 1.510” x 1.510” N O T FO R N EW D ES IG N S Board Thickness 0.031”, Board Material FR-4 8 of 8 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS150909