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RF2483_1

RF2483_1

  • 厂商:

    RFMD(威讯)

  • 封装:

  • 描述:

    RF2483_1 - LOW NOISE DUAL-BAND QUADRATURE MODULATOR WITH AGC - RF Micro Devices

  • 数据手册
  • 价格&库存
RF2483_1 数据手册
RF2483Low Noise DualBand Quadrature Modulator with AGC RF2483 LOW NOISE DUAL-BAND QUADRATURE MODULATOR WITH AGC RoHS Compliant & Pb-Free Product Package Style: QFN, 20-Pin, 4x4 RF OUT HB RF OUT LB 17 GND3 GND2 Features Dual-Band Operation 7002400MHz -156dBm/Hz noise@20MHz offset +19dBm OIP3 +6dBm OP1dB 35dB Gain Control Range Single 2.7V to 3.3V Supply * 20 19 Mode Control & Biasing 18 GC 16 * VCC3 1 VCC2 2 ISIG P 3 ISIG N 4 EN 5 * 15 GC DEC Power Control Σ 14 VREF 13 QSIG P 12 QSIG N +45° -45° +45° -45° 11 BAND SEL 10 GND1 * 6 VCC1 7 LO LB 8 GND LO 9 LO HB Applications TDMA/GSM/EDGE Handsets GSM/EDGE Handsets W-CDMA Handsets TDMA-Based Wireless Applications Wireless Local Loop Basestations * Represents "GND". Functional Block Diagram Product Description The RF2483 is a dual-band direct I/Q to RF modulator designed for handset applications where multiple modes of operation are required. The device provides common differential I/Q inputs and a common AGC amplifier. Independent single-ended LO inputs and single-ended high and low band RF outputs are provided. The device achieves a very low out-of-band noise density of -156dBm/Hz minimizing RF filtering. Operating from a single 2.7V supply, the device is assembled in a 4mmx4mm, 20-pin, QFN package. Ordering Information RF2483 RF2483PCBA-41X Low Noise Dual-Band Quadrature Modulator with AGC Fully Assembled Evaluation Board Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Rev A8 DS060203 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 28 RF2483 Absolute Maximum Ratings Parameter Supply Voltage Storage Temperature Operating Ambient Temperature Input Voltage, any pin Input Power, any pin Rating -0.5 to 3.6 -40 to +150 -40 to +85 -0.5 to 3.6 +10 Unit V °C °C V dBm Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Parameter Operating Range Supply Voltage* Temperature Range* High Band Frequency Range* Low Band Frequency Range* Min. 2.7 -40 1700 700 65 65 Specification Typ. Max. 3.3 +85 2400 1000 Unit V °C MHz MHz mA mA μA V V μA Bandsel =2.7V Bandsel =0V Condition DC Parameters High Band Supply Current Low Band Supply Current Sleep Current Logic Levels Input Logic Low Input Logic High Logic Pins Input Current* 0 1.4
RF2483_1 价格&库存

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