RF2484
RF2484Direct
Quadrature
Modulator
DIRECT QUADRATURE MODULATOR
IREF
ISIG
QSIG
S
N
GND 3
11 GND
7
EW
PD
8
9
GND
6
D
5
10 VCC
RF OUT
-45°
+45°
LO 4
Functional Block Diagram
Product Description
The RF2484 is a monolithic integrated quadrature modulator IC capable
of universal direct modulation for high-frequency AM, PM, or compound
carriers. This low-cost IC features excellent linearity, noise floor, and
over-temperature carrier suppression performance. The device implements differential amplifiers for the modulation inputs, 90° carrier phase
shift network, carrier limiting amplifiers, two matched double-balanced
mixers, summing amplifier, and an output RF amplifier which will drive
50 from 800MHz to 2500MHz. It is packaged in a small industry-standard QFN 16-pin plastic package.
N
O
T
12 GND
N
13
R
14
FO
Dual-Band CDMA Base Stations
TDMA/TDMA-EDGE Base Stations
GSM-EDGE/EGSM Base Stations
W-CDMA Base Stations
WLAN and WLL Systems
GMSK,QPSK,DQPSK,QAM
Modulation
15
GND 2
Applications
16
ES
IG
1
VCC
Typical Carrier
Suppression>35dBc, Sideband Suppression>35dBc
over temperature with highly
linear operation
Noise Floor better than 152dBm/Hz from 800MHz to
2200MHz
Single 5V Power Supply
GND
QREF
Features
GND
RoHS Compliant & Pb-Free Product
Package Style: QFN, 16-pin, 4x4
Ordering Information
RF2484
RF2484PCBA-410
GaAs HBT
GaAs MESFET
InGaP HBT
Direct Quadrature Modulator
Fully Assembled Evaluation Board
Optimum Technology Matching® Applied
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
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RF2484
Input LO and RF Levels
Unit
-0.5 to +7.5
VDC
+10
dBm
Operating Ambient Temperature
-40 to +85
°C
Storage Temperature
-40 to +150
°C
Parameter
Min.
Specification
Typ.
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
Max.
Unit
S
Supply Voltage
Rating
Condition
N
Absolute Maximum Ratings
Parameter
T=25°C, VCC =5V, VREF =4.1V; I and Q driven
single-ended
Frequency Range
Power Level
800
2500
-6
+6
Input Impedance
ES
IG
LO Input
MHz
dBm
45-j95
58-j50
Frequency Range
DC
EW
63-j40
Modulation Input
250
4.1
Input Resistance
30
N
Reference Voltage (VREF)
Input Bias Current
R
RF Output (880MHz)
At 1960MHz
40
At 2140MHz
At 2400MHz
MHz
V
k
A
LO= -5dBm at 880MHz; Single sideband testing unless otherwise noted
-12
dBm
For ACPR=-72dBc; I&Q Amplitude=1.1VPP
(single-ended)
-72
dBc
Channel Power=-12dBm; see Test Setup for
detailed information
dBc
T=25°C; POUT =-10dBm; optimized I,Q DC offsets
35
dBc
Temperature cycled from -40°C to +85°C after
optimization at T=25°C; POUT =-10dBm
Sideband Suppression
50
dBc
T=25°C; POUT =-10dBm; optimized I,Q amplitude and phase balance
Sideband Suppression
over Temperature
35
dBc
Temperature cycled from -40°C to +85°C after
optimization at T=25°C; POUT =-10dBm
dBm/Hz
At 20MHz offset, 30kHz res BW, VCC =5V; ISIG,
QSIG, IREF, and QREF tied to VREF
FO
CDMA Output Channel Power
At 880MHz
D
52-j54
CDMA ACPR
50
N
O
Carrier Suppression
over Temperature
T
Carrier Suppression
Broadband Noise Floor
EVM
Phase Error
-152.5
2.3
%
See Test Setup for detailed information
1
° RMS
See Test Setup for detailed information
Rho
.9993
Output Impedance
28-j72
2 of 12
See Test Setup for detailed information
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DS150909
RF2484
Parameter
Min.
Specification
Typ.
Max.
Unit
Condition
LO=-5dBm at 1960MHz; Single sideband testing unless otherwise noted
RF Output (1960MHz)
PCS CDMA Output Power
-13
dBm
For ACPR=-72dBc; I&Q Amplitude=1.2VPP
(single-ended)
PCS CDMA ACPR
-72
dBc
Channel Power=-13dBm; see Test Setup for
detailed information
50
dBc
T=25°C; POUT =-13dBm; optimized I,Q DC offsets
Carrier Suppression
over Temperature
35
dBc
Temperature cycled from -40°C to +85°C after
optimization at T=25°C; POUT =-13dBm
Sideband Suppression
50
dBc
T=25°C; POUT =-13dBm; optimized I,Q amplitude and phase balance
Sideband Suppression
over Temperature
35
dBc
Temperature cycled from -40°C to +85°C after
optimization at T=25°C; POUT =-13dBm
-154.5
EVM
dBm/Hz
2.3
1
Rho
.9988
Output Impedance
46-j22
%
See Test Setup for detailed information
See Test Setup for detailed information
See Test Setup for detailed information
EW
RF Output (2140MHz)
At 20MHz offset, 30kHz res BW, VCC =5V; ISIG,
QSIG, IREF, and QREF tied to VREF
° RMS
D
Phase Error
N
ES
IG
Broadband Noise Floor
S
Carrier Suppression
LO= -5dBm at 2140MHz; Single sideband testing unless otherwise noted
-16
dBm
For ACPR=-60dBc; I&Q Amplitude=1.4VPP
(single-ended)
W-CDMA ACPR
-60
dBc
Channel Power=-16dBm; see Test Setup for
detailed information
dBc
T=25°C; POUT =-13dBm; optimized I,Q DC offsets
dBc
Temperature cycled from -40°C to +85°C after
optimization at T=25°C; POUT =-13dBm
50
dBc
T=25°C; POUT =-13dBm; optimized I,Q amplitude and phase balance
35
dBc
Temperature cycled from -40°C to +85°C after
optimization at T=25°C; POUT =-13dBm
dBm/Hz
At 20MHz offset, 30kHz res BW, VCC =5V; ISIG,
QSIG, IREF, and QREF tied to VREF
50
Carrier Suppression
over Temperature
35
FO
R
Carrier Suppression
Phase Error
Rho
N
EVM
-152
O
Broadband Noise Floor
T
Sideband Suppression
Sideband Suppression
over Temperature
N
W-CDMA Output Channel Power
5.9
%
See Test Setup for detailed information
2.4
° RMS
See Test Setup for detailed information
.9961
Output Impedance
See Test Setup for detailed information
58-j16
Power Down
Turn On/Off Time
PD Input Resistance
100
50
Power Control “ON”
Power Control “OFF”
DS150909
2.8
1.0
ns
k
1.2
V
Threshold voltage
V
Threshold voltage
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RF2484
Parameter
Min.
Specification
Typ.
Max.
Unit
Condition
Power Supply
Voltage
5.0
4.5
66
Specifications
6.0
V
Operating Limits
70
mA
25
A
Power Down
N
O
T
FO
R
N
EW
D
ES
IG
N
S
Current
V
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DS150909
RF2484
Pin
1
Function
GND
2
3
4
GND
GND
LO
5
6
GND
VCC
7
PD
Description
Interface Schematic
Ground connection. This pin should be connected directly to the ground
plane.
Same as pin 1.
Same as pin 1.
The input of the phase shifting network. This pin has an internal DC blocking capacitor. This port is voltage-driven so matching at different frequencies is generally not required.
Same as pin 1.
N
S
Power supply. An external capacitor is needed if no other low frequency
bypass capacitor is nearby.
Power Down control. When this pin is "low," all circuits are shut off. A "low"
is typically 1.2V or less at room temperature.When this pin is "high" (VCC),
all circuits are operating normally. If PD is below VCC, output power and
performance will be degraded. Operating in this region is not recommended, although it might be useful in some applications where power
control is required.
RF Output. This pin has an internal DC blocking capacitor. At some frequencies, external matching may be needed to optimize output power. A small
amount of DC current may be present at this output. As a result, if the voltage at this pin is measured using a high impedance probe, some DC voltage may be observed at this output.
LO
ES
IG
Same as pin 1.
EW
Same as pin 6.
Same as pin 1.
Same as pin 1.
Baseband input to the Q mixer. This pin is DC coupled. The input drive level
determines output power and linearity performance; for better carrier suppression, sideband suppression, and dynamic range, the drive level should
be as high as possible to meet the required linearity performance. The recommended DC level for this pin is 4.1V.
FO
1 0 0
1 p
T
For optimum carrier suppression, the DC voltages on I REF, Q REF, I SIG
and Q SIG should be adjusted slightly to compensate for inherent undesired internal DC offsets; for optimum sideband suppression, phase and
signal amplitude on IREF, Q REF, I SIG and Q SIG should be adjusted
slightly to compensate for inherent undesired internal offsets. See RFMD
AN0001 for more detail.
Baseband input to the I mixer. This pin is DC coupled. The input drive level
determines output power and linearity performance; for better carrier suppression, sideband suppression, and dynamic range, the drive level should
be as high as possible to meet the required linearity performance. The recommended DC level for this pin is 4.1V; see pin 13 for more information.
V CC
O
I SIG
N
14
RF OUT
D
GND
VCC
GND
GND
Q SIG
R
9
10
11
12
13
RF OUT
2 0 0
PD
N
8
V CC
V CC
1 0 0
1 p
15
I REF
Reference voltage for the I mixer. This voltage should be the same as the
DC voltage supplied to the I SIG pin. A voltage of 4.1V is recommended;
see pin 13 for more information.
V CC
1 0 0
The SIG and REF inputs are inputs of a differential amplifier. Therefore the
REF and SIG inputs are interchangeable. If swapping the I SIG and I REF
pins, the Q SIG and Q REF also need to be swapped to maintain the correct
phase. It is also possible to drive the SIG and REF inputs in a differential
mode. This will increase the gain.
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1 p
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RF2484
Pin
16
Function
Q REF
Description
Interface Schematic
Reference voltage for the Q mixer. This voltage should be the same as the
DC voltage supplied to the Q SIG pin. A voltage of 4.1V is recommended;
see pin 13 for more information.
V CC
1 0 0
1 p
Pkg
Base
GND
Ground connection. The package base should be connected to the ground
plane.
S
Package Drawing
0.10 C B
-B-
N
2 PLCS
4.00
0.10 C B
2 PLCS
2.00
ES
IG
3.75
0.80
A
TYP
2
1.60
2 PLCS
1.50
3.75
INDEX AREA
D
0.75
0.50
0.10 C A
0.45
0.28
EW
2 PLCS
4.00
SQ.
N
12°
MAX
Dimensions in mm.
0.10 C A
2 PLCS
3.20
2 PLCS
1.00
0.90
0.10 M C A B
C
0.05
0.75
0.65
N
O
T
FO
R
Shaded pin is lead 1.
0.05
0.00
2.00
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DS150909
RF2484
CDMA/W-CDMA Test Setup
Rohde & Schwarz
AMIQ 1110.2003.02
Q SIG
Q REF
Rohde & Schwarz
FSIQ 1119.6001.26
LO IN
RF2484
Evaluation Board
VCC
Agilent 66332A
Agilent 89441
Vector Signal Analyzer
ES
IG
RF OUT
S
I REF
N
I SIG
Hewlett-Packard
8665B
VPD
General
EW
D
The above setup was used to evaluate the RF2484 under CDMA and W-CDMA modulation conditions. An AMIQ was required to
provide the appropriate DC reference voltage (4.1V) for the I and Q pins. I and Q were driven single-endedly; differential drive
may improve performance. A PC-controlled Rohde & Schwarz AMIQ generated the CDMA I and Q signals. In order to reduce
AMIQ noise contributions to adjacent channel power, W-CDMA baseband signals were filtered using a high order low pass filter
before application to the RF2484.
EVM, Phase Error, and Rho
R
N
To measure EVM, phase error, and Rho, signals were generated using the AMIQ and decoded with the Agilent VSA. For CDMA
Cellular and PCS, I and Q input signals were generated with the Pilot Channel active, 32x oversampling and base station equifilters. For W-CDMA, the Common Pilot Channel was active with 8x oversampling and a root cosine filter. In all cases, relative
signal amplitude levels were adjusted to optimize signal quality.
FO
CDMA Modulation Setup (Cellular and PCS)
N
O
T
To measure ACPR, I and Q input signals were generated using the following settings:
• Pilot Channel active
• Sync Channel active
• Paging Channel active
• 6 Traffic Channels active
• 32x Oversampling
• Base Station equifilter
W-CDMA Modulation Setup
To measure W-CDMA ACPR, I and Q input signals were generated using the following settings in the AMIQ:
• P-CPICH (Common Pilot Channel) active
• P-SCH (Sync Channel) active
• P-CCPCH (Primary Common Control Physical Channel) active
• P-ICH (Page Indicator Channel) Active
• DL-DPCCH (Dedicated Physical Control Channel) active
• 6 DPCH (Dedicated Physical Channels) active
• 8x Oversampling
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RF2484
Application Schematic
3 pF
100 nF
IREF
ISIG
QREF
QSIG
3 pF
100 nF
1
16
15
14
2
13
12
3 pF
6
VCC
10
+45°
5
100 nF
S
-45°
4
7
8
VCC
9
100 nF
RF OUT
N
O
T
FO
R
N
EW
D
PD
100 nF
ES
IG
LO
11
N
3
8 of 12
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DS150909
RF2484
Evaluation Board Schematic
P2
P1
NOTES:
1. R1 is installed for non-independent control of I and Q
reference voltages.
R1a gives independent control of reference voltages.
2. Components with * following the reference designator
should not be populated on the evaluation board.
P1-1
1
VCC
2
GND
3
GND
P2-1
P2-3
CON3
R1a*
0
1
VREF/QREF
2
GND
3
IREF
CON3
J3
ISIG
IREF
R1
0
C5
3 pF
C6
100 nF
S
J4
QSIG
U1
C8
100 nF
1
16
15
2
3
11
-45°
4
10
6
D
+45°
7
EW
5
VCC
8
C3
3 pF
9
VCC
C4
100 nF
2484400-
J1
RFOUT
C2
100 nF
N
O
T
FO
R
N
C1
3 pF
13
12
J2
LO
14
ES
IG
C7
3 pF
N
VREF/QREF
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RF2484
Evaluation Board Layout
Board Size 2.0" x 2.0"
N
O
T
FO
R
N
EW
D
ES
IG
N
S
Board Thickness 0.028”, Board Material FR-4
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DS150909
RF2484
RF2484 Cellular CDMA Spectra at Various Output Levels
(ACPR @ 885kHz, Vcc = 5.0V, Vref = 4.1V, T = 25°C)
-20
-20
-30
-30
-40
CP = -9.5 dBm;
ACPR = -68 dBc
CP = -10.6 dBm;
ACPR = -70 dBc
-60
CP = -12.0 dBm;
ACPR = -72 dBc
CP = -14.7 dBm;
ACPR = -73 dBc
-70
CP = -12.9 dBm;
ACPR = -72 dBc
-60
CP = -14.3 dBm;
ACPR = -73 dBc
-70
-80
-80
-90
-90
878
878.5
879
879.5
880
880.5
881
881.5
882
-100
1957.5 1958 1958.5 1959 1959.5 1960 1960.5 1961 1961.5 1962 1962.5
IG
-100
877.5
CP = -11.1 dBm;
ACPR = -71 dBc
-50
S
-50
N
Note: Below ~-90dBm,
test setup noise inhibits accurate
ACP measurement.
Power (dBm)
Power (dBm)
-40
RF2484 PCS CDMA Spectra at Various Output Levels
(ACPR @ 885 kHz, Vcc = 5.0V, Vref = 4.1V, T = 25°C)
882.5
Frequency (MHz)
ES
Frequency (MHz)
RF2484 Output Power versus I, Q Input Voltage Level
(Vcc = 5.0V, Vref = 4.1V, T = 25°C, Single Sideband)
-5
D
5
Output Channel Power (dBm)
-10
EW
0
N
-5
-10
880 MHz
R
SSB Output Power (dBm)
RF2484 Output Channel Power vs I, Q Input Voltage Level
(Vcc = 5.0V, Vref = 4.1V, T = 25°C, CDMA/W-CDMA Mod.)
1960 MHz
-15
200
400
600
FO
0
800
1000
1200
880 MHz CDMA Signal
1960 MHz CDMA Signal
2140 MHz W-CDMA Signal
-30
1400
1600
250
500
750
1000
1250
1500
1750
2000
2250
2500
I, Q Input Voltage Level (mVpp)
N
O
T
I, Q Input Voltage Level (mVp)
-20
-25
2140 MHz
-20
-15
DS150909
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RF2484
RoHS* Banned Material Content
Yes
0.037
526
e3
Die
Molding Com pound
Lead Fram e
Die Attach Epoxy
Wire
Solder Plating
Parts Per Million (PPM)
Hg
Cr VI
0
0
0
0
0
0
0
0
0
0
0
0
Cd
0
0
0
0
0
0
PBB
0
0
0
0
0
0
PBDE
0
0
0
0
0
0
S
Pb
0
0
0
0
0
0
N
Bill of Materials
ES
IG
RoHS Compliant:
Package total w eight in grams
Compliance Date Code:
Bill of Materials Revision:
Pb Free Category:
This RoHS banned m aterial content declaration w as prepared solely on inform ation, including analytical data,
provided to RFMD by its suppliers, and applies to the Bill of Materials (BOM) revision noted above.
N
O
T
FO
R
N
EW
D
* DIRECTIVE 2002/95/EC OF THE EUROPEAN PARLIAMENT AND OF THE COUNCIL of 27 January 2003 on the restriction of the
use of certain hazardous substances in electrical and electronic equipment
12 of 12
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DS150909