RF2619

RF2619 10 Typical Applications • 3V CDMA/FM Cellular Systems • Supports Dual-Mode AMPS/CDMA • Supports Dual-Mode TACS/CDMA • General Purpose Linear IF Amplifier • Portable Battery-Powered Equipment • Commercial and Consumer Systems 3V CDMA/FM TRANSMIT AGC AMPLIFIER Product Description The RF2619 is a complete AGC amplifier designed for the transmit section of 3V dual-mode CDMA/FM cellular applications. It is designed to amplify IF signals while providing more than 84dB of gain control range. Noise Figure, IP3, and other specifications are designed to be compatible with the IS-95 Interim Standard for CDMA cellular communications. This circuit is designed as part of the RFMD CDMA Chip Set, consisting of this Transmit IF AGC Amp, a Transmit Upconverter, a Receive LNA/Mixer, and a Receive IF AGC Amp. The IC is manufactured on an advanced high frequency Silicon Bipolar process and is packaged in a standard miniature 16-lead plastic SSOP package. 0.157 0.150 0.012 0.008 0.196 0.189 0.025 -A0.0098 0.0040 0.2440 0.2284 0.0688 0.0532 8° MAX 0°MIN 0.050 0.016 0.0098 0.0075 NOTES: 1. Shaded lead is Pin 1. 2. All dimensions are excluding mold flash. 3. Lead coplanarity - 0.005 with respect to datum "A". Optimum Technology Matching® Applied Si Bi-CMOS SiGe HBT Si CMOS • Supports Dual Mode Operation CDMA+ 1 CDMA- 2 GND 3 GND 4 GND 5 GND 6 GND 7 NC 8 GAIN CONTROL 16 GC 15 VCC 14 VCC 13 VCC • -48dB to +42dB Gain Control Range • Single 3V Power Supply • Monolithic Construction • 12MHz to 175MHz Operation • Miniature Surface Mount Package 12 GND 11 GND 10 OUT+ 9 OUT- Ordering Information RF2619 RF2619 PCBA 3V CDMA/FM Transmit AGC Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev B5 010720 10-25 IF AMPLIERS üSi BJT Package Style: SSOP-16 10 GaAs HBT GaAs MESFET Features RF2619 Absolute Maximum Ratings Parameter Supply Voltage Control Voltage Input Power Levels Operating Ambient Temperature Storage Temperature Rating -0.5 to +7.0 -0.5 to +5.0 +10 -40 to +85 -40 to +150 Unit VDC V dBm °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter Specification Min. Typ. Max. Unit Condition T=25°C, 130MHz, VCC =3.0V, Pin=40dBm, ZS =1kΩ, ZL =1kΩ, 1kΩ External Output Terminating Resistor (Effective ZL =500 Ω) (See Application Example) Overall Frequency Range Maximum Gain Minimum Gain Gain Slope Gain Control Voltage Range Gain Control Input Impedance Noise Figure Input IP3 Input Impedance Stability (Max VSWR) 12 to 175 +42 -48 57 0 to 3 30 10.5 -25 1 10:1 2.7 to 3.3 23 22 V mA mA MHz dB dB dB/V VDC kΩ dB dBm kΩ +39 -45 VGC =2.4V VGC =0.3V Measured in 0.5V increments 13 -26 At maximum gain and 130MHz At +10 gain and referenced to 1kΩ, Pin=-45dBm per tone Differential Spurious