RF2637

RF2637 0 RoHS Compliant & Pb-Free Product Typical Applications • 3V Basestation Systems • General Purpose Linear IF Amplifier • Commercial and Consumer Systems • Portable Battery-Powered Equipment RECEIVE AGC AMPLIFIER Product Description The RF2637 is a complete AGC amplifier designed for the receive section of 3V cellular and PCS applications basestations. It is designed to amplify IF signals while providing more than 90dB of gain control range. Noise Figure, IP3, and other specifications are designed for basestations. The IC is manufactured on an advanced high frequency SiGe process, and is packaged in a standard miniature 8-lead plastic MSOP package. 6° MAX 0° MIN 0.192 + 0.008 0.012 0.006 + 0.003 -A- 0.0256 0.118 + 0.004 sq. 0.034 NOTES: 1. Shaded lead is pin 1. 2. All dimensions are exclusive of flash, protrusions or burrs. 3. Lead coplanarity: 0.002 with respect to datum "A". 0.021 + 0.004 0.006 + 0.002 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS Package Style: MSOP-8 Features • Supports Basestation Applications • -55dB to +51dB Gain Control Range @ 85MHz • Single 3V Power Supply • -2dBm Input IP3 • 12MHz to 385MHz Operation IN+ 1 IN- 2 GND 3 GC 4 GAIN CONTROL 8 VCC1 7 VCC2 6 OUT+ Ordering Information 5 OUTRF2637 RF2637 PCBA Receive AGC Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A5 050829 10-41 RF2637 Absolute Maximum Ratings Parameter Supply Voltage Control Voltage Input RF Power Operating Ambient Temperature Storage Temperature Value -0.5 to +5.0 -0.5 to +5.0 +10 -40 to +85 -40 to +150 Unit VDC VDC dBm °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. RoHS marking based on EUDirective2002/95/EC (at time of this printing). However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter Specification Min. Typ. Max. Unit Condition T=25°C, 85MHz, VCC =3.0V, ZS =500 Ω, ZL =500 Ω, 500 Ω External Input Terminating Resistor, 500 Ω External Output Terminating Resistor (Effective ZS =333 Ω, Effective ZL =250 Ω) (See Application Example) Overall Frequency Range Maximum Gain Minimum Gain Maximum Gain Minimum Gain Gain Slope Gain Control Voltage Range Gain Control Input Impedance Noise Figure Input IP3 Stability (Max VSWR) +40 -65 +35 -68 -46 10:1 12 to 385 +51 -55 +45 -58 57 0 to 2.5 30 5 -40 -2 +65 -40 +55 -48 7.2 MHz dB dB dB dB dB/V VDC kΩ dB dBm dBm VGC =2.5V, 85MHz VGC =0.1V, 85MHz VGC =2.5V, 385MHz VGC =0.1V, 385MHz Note 1 Source impedance of 4.7kΩ At maximum gain and 85MHz At +40dB gain, referenced to 500 Ω At minimum gain, referenced to 500 Ω Spurious