RF2705G_1

RF2705GLow Noise, MultiMode, QuadBand, Quadrature Modulator and PA Driver RF2705G LOW NOISE, MULTI-MODE, QUAD-BAND, QUADRATURE MODULATOR AND PA DRIVER RoHS Compliant & Pb-Free Product Package Style: QFN, 24-Pin, 4x4 MODE B MODE A I SIG N I SIG P VCC1 24 23 22 21 20 Features W-CDMA High/Mid/Low Power Modes Quad-Band Direct Quadrature Modulator Variable Gain PA Drivers GMSK Bypass Amplifiers LO Frequency Doubler and Divider Baseband Filtering GND 19 18 RF OUT WB P RF OUT WB N RF OUT HB P RF OUT HB N RF OUT LB P RF OUT LB N 17 16 15 14 13 12 GC VCC2 1 Note: The die flag is the chip's main ground. LO HB P 2 LO HB N 3 DIV 2 +45° -45° Σ LO LB P 4 Flo x2 +45° -45° LO LB N 5 Mode Control and Biasing Power Control MODE C 6 7 MODE D 8 Q SIG N 9 Q SIG P 10 VREF 11 GC DEC Applications EDGE/GSM (GSM850/900) Handsets EDGE/GSM (DCS/PCS) Handsets W-CDMA Handsets/Data Cards W-CDMA/GSM/EDGE Multimode Handsets and Data Cards Functional Block Diagram Product Description The RF2705 is a low noise, multi-mode, quad-band direct I/Q to RF modulator and PA driver designed for handset applications where multiple modes of operation are required. Frequency doublers, dividers and LO buffers are included to support a variety of LO generation options. Dynamic power control is supported through a single analog input giving 90dB of power control range for the W-CDMA mode and 40dB of power control in the other two modes. Three sets of RF outputs are provided: high band and low band low noise EDGE/GMSK outputs, as well as one wideband W-CDMA output. The device is designed for 2.7V to 3.3V operation, and is assembled in a plastic, 24-pin, 4mmx4mm QFN. Ordering Information RF2705G Low Noise, Multi-Mode, Quad-Band, Quadrature Modulator and PA Driver RF2705GPCBA-41X Fully Assembled Evaluation Board Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Rev A0 DS060206 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 26 RF2705G Absolute Maximum Ratings Parameter Supply Voltage Storage Temperature Operating Ambient Temperature Input Voltage, any pin Input Power, any pin Rating -0.5 to 3.6 -40 to +150 -40 to +85 -0.5 to +3.6 +5 Unit V °C °C V dBm Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Specification Unit Min. Typ. Max. Output Performance with Modulated Baseband Inputs Low Band EDGE 8PSK Mode (GSM850/GSM900) Mode=Low Band FLOx1 (see Control Logic Truth Table for Mode Control Settings) Parameter Output Power Maximum Output Power with 8PSK Modulated Signal* Maximum VGC Minimum VGC Gain Range 0 +2.5 -39 42 -37 dBm dBm dB Condition VCC =2.7V, T=+25°C While meeting spectral mask While meeting spectral mask Difference between output power at GC=2.0V and GC=0.2V. Out-of-Band Emission Spectrum Emission Mask* Frequency Spacing 200kHz 250kHz 400kHz 600kHz to 1800kHz 1800kHz to 3000kHz 3000kHz to 6000kHz > 6000kHz -36 -43 -67 -73 -73 -73 -75 2 -40 4 3 -34 9 TBD TBD TBD dBc dBc dBc dBc dBc dBc dBc % dB % 30kHz BW 30kHz BW 30kHz BW 30kHz BW 100kHz BW 100kHz BW 100kHz BW 8PSK Modulation Error Vector Magnitude RMS* Origin Offset* Peak* Output Noise At FC ±20MHz* Relative Noise at: Maximum Gain Absolute Noise at: Maximum Gain All Gain Settings -156 -154 dBm dBm GC=2.0V, IQ=0VP-P IQ=1.2VP-P 8PSK -156 -152 dBc/Hz dBc/Hz GC=2.0V, IQ=1.2VP-P 8PSK GC=2.0V to 1.4V 2 of 26 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A0 DS060206 RF2705G Parameter General Conditions Local Oscillator LO LB Input Frequency RF LB Output Frequency Input Power IQ Baseband Inputs IQ Level IQ Common Mode Input Bandwidth Baseband Filter Attenuation 0.7 20 1.2 1.2 1.0 VP-P V MHz dB At 20MHz offset 824 824 -6.0 0.0 915 915 +3.0 MHz MHz dBm 8PSK Input IQ signal driven differentially and in quadrature. Min. Specification Typ. Max. Unit Condition Output Performance with Modulated Baseband Inputs High Band EDGE 8PSK Mode (DCS1800/PCS1900) Mode=High Band FLOx1 (see Control Logic Truth Table for Mode Control Settings) Output Power Maximum Output Power with 8PSK Modulated Signal* Maximum VGC Minimum VGC Gain Range -1 +1.5 -40 42 -38 dBm dBm dB While meeting spectral mask While meeting spectral mask Difference between output power at GC=2.0V and GC=0.2V. VCC =2.7V, T=+25°C Out-of-Band Emission Spectrum Emission Mask* Frequency Spacing 200kHz 250kHz 400kHz 600kHz to 1800kHz 1800kHz to 3000kHz 3000kHz to 6000kHz > 6000kHz -36 -43 -67 -73 -73 -73 -75 1.3 -37 3 3 -30 11 TBD TBD TBD dBc dBc dBc dBc dBc dBc dBc % dB % 30kHz BW 30kHz BW 30kHz BW 30kHz BW 100kHz BW 100kHz BW 100kHz BW 8PSK Modulation Error Vector Magnitude RMS* Origin Offset* Peak* Output Noise At FC ±20MHz* Relative Noise at: Maximum Gain Absolute Noise at: Maximum Gain All Gain Settings * Not tested in Production -153 -151 dBm dBm GC=2.0V, IQ=0VP-P IQ=1.2VP-P 8PSK -154 -150 dBc/Hz dBc/Hz GC=2.0V, IQ=1.2VP-P 8PSK GC=2.0V to 1.4V Rev A0 DS060206 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 3 of 26 RF2705G Parameter General Conditions Local Oscillator LO HB Input Frequency RF HB Output Frequency Input Power IQ Baseband Inputs IQ Level IQ Common Mode Input Bandwidth Baseband Filter Attenuation 0.7 20 1.2 1.2 1.0 VP-P V MHz dB At 20MHz offset 1710 1710 -6.0 0.0 1910 1910 +3.0 MHz MHz dBm 8PSK Input IQ signal driven differentially and in quadrature. Min. Specification Typ. Max. Unit Condition Output Performance with Modulated Baseband Inputs W-CDMA Mode Mode=Wideband FLOx2 (see Control Logic Truth Table for Mode Control Settings) Output Power Maximum Output Power with W-CDMA Modulated Signal* High Power Mode Medium Power Mode 3 -4 6 -1 dBm dBm GC=2.0V GC=1.5V Difference between output power at GC=2.0V and GC=0.2V. High Power Mode 90 dB Gain step when switching between power modes in either direction. ±0.5 TBD dB dB GC=1.4V GC=TBD VCC =2.7V, T=+25°C, while meeting 48dBc ALCR Gain Range Gain Step High Power to Medium Power Medium Power to Low Power Out-of-Band Emission Adjacent Channel Leakage Power Ratio (ALCR)* Channel Spacing ±5MHz ±10MHz 50 65 1.4 -152 -146 -146 * Not tested in Production dBc dBc %rms dBc/Hz dBc/Hz 3.84MHz relative to channel power 3.84MHz relative to channel power 3GPP W-CDMA GC=2.0V GC=2.0V to 1.5V Error Vector Magnitude RMS* Output Noise At FC ±40MHz* 4 of 26 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A0 DS060206 RF2705G Parameter General Conditions Local Oscillator LO LB Input Frequency RF WB Output Frequency Input Power IQ Baseband Inputs IQ Level IQ Common Mode Input Bandwidth Baseband Filter Attenuation 8 10 0.8 1.2 11 VP-P V MHz dB At 40MHz offset 960 1920 -10.0 0.0 990 1980 +3.0 MHz MHz dBm 3GPP W-CDMA HQPSK, 1DPCCH+1DPDCH Input IQ signal driven differentially and in quadrature. Min. Specification Typ. Max. Unit Condition Output Performance with CW Baseband Inputs Wideband Mode Mode=Wideband FLOx2 (see Control Logic Truth Table for Mode Control Settings) VGA and PA Driver Output Power W-CDMA Modulated* Output Power CW Gain Control Voltage Range Gain Control Range Gain Control Slope 2 0.2 92 73 -48 -50 -50 -50 -42 -41 -38 -23 3rd Harmonic of Modulation Suppression at FC-3x300kHz -55 -30 -30 -30 -30 -30 -30 -30 -10 -50 5 5 8 2.0 dBm dBm V dB dB/V dBc dBc dBc dBc dBc dBc dBc dBc dBc Difference between output power at GC=2.0V and GC=0.2V Calculated between GC=1.0V and 0.5V GC=2.0V, No I/Q adjustment GC=1.5V, No I/Q adjustment GC=1.0V, No I/Q adjustment GC=0.5V, No I/Q adjustment GC=2.0V, No I/Q adjustment GC=1.5V, No I/Q adjustment GC=1.0V, No I/Q adjustment GC=0.5V, No I/Q adjustment GC=2.0V VCC =2.7V, T=+25°C, LO=975MHz to 990MHz at -10dBm, IQ=540mVP-P** at 100kHz, unless otherwise noted GC=2.0V, IQ=0.8VP-P at HQPSK GC=2.0V Modulator Sideband Suppression * * * Carrier Suppression Spurious Outputs Spurious Output at Integer Multiples of FLO LB* FLO LB 4xFLO LB 6xFLO LB * Not tested in Production -60.0 -14.0 -47.0 0 0 dBm dBm dBm GC=2.0V, I/Q=540mVP-P at 100kHz FLO LB leakage Second harmonic of carrier Third harmonic of carrier Rev A0 DS060206 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 5 of 26 RF2705G Parameter Output Compression Output P1dB* +11.5 +20 dBm dBm I/Q=100kHz GC=2.0V. Extrapolated from IM3 with two baseband tones at 90kHz and 110kHz applied differentially, in quadrature, at both I and Q inputs, each tone 400mVP-P. GC=2.0V Min. Specification Typ. Max. Unit Condition Intermodulation Output IP3* Intermodulation IM3 tone at FC +70kHz and FC +130kHz relative to tones at FC +90kHz and FC +110kHz -37 dBc -40 dBc GC=1.5V Output Performance with CW Baseband Inputs Low Band Mode (GSM850/GSM900) Mode=Low Band FLOx1 (see Control Logic Truth Table for Mode Control Settings) VGA and PA Driver Output Power 8PSK Modulated* Output Power CW * -44 Gain Control Voltage Range Gain Control Range Gain Control Slope 0.2 42 28 -36 -36 -36 -36 -36 -44 -44 * -44 -44 -40 3rd Harmonic of Modulation Suppression at FC-3x300kHz * Not tested in Production ** Provides the same output power as modulated signal with associated crest factor. -49 -30 -30 -30 -30 -30 -34 -34 -34 -34 -34 -40 0 +2.5 2.2 -1.2 -13.5 -30 -40 -37 2.0 +5 dBm dBm dBm dBm dBm dBm V dB dB/V dBc dBc dBc dBc dBc dBc dBc dBc dBc dBc dBc Difference between output power at GC=2.0V and GC=0.2V Calculated between GC=0.5V and 1.5V GC=2.0V, No I/Q adjustment GC=1.5V, No I/Q adjustment GC=1.0V, No I/Q adjustment GC=0.5V, No I/Q adjustment GC=0.2V, No I/Q adjustment GC=2.0V, No I/Q adjustment GC=1.5V, No I/Q adjustment GC=1.0V, No I/Q adjustment GC=0.5V, No I/Q adjustment GC=0.2V, No I/Q adjustment GC=2.0V VCC =2.7V, T=+25°C, LO=824MHz to 915MHz at 0dBm, IQ=800mVP-P** at 100kHz, unless otherwise noted GC=2.0V, IQ=1.2VP-P 8PSK GC=2.0V, IQ=800mVP-P at 100kHz GC=1.5V, IQ=800mVP-P at 100kHz GC=1.0V, IQ=800mVP-P at 100kHz GC=0.5V, IQ=800mVP-P at 100kHz GC=0.2V, IQ=800mVP-P at 100kHz Modulator Sideband Suppression * * * * Carrier Suppression 6 of 26 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A0 DS060206 RF2705G Parameter Spurious Outputs Spurious Outputs at Integer Harmonics of 1/2xFLOHB* FLO HB (3/2)xFLO LB -62.0 -19.0 +7.0 dBm dBm dBm Min. Specification Typ. Max. Unit FLO/2 Mode Condition GC=2.0V, I/Q=800mVP-P at 100kHz Second harmonic of carrier and LO leakage Third harmonic of carrier I/Q=100kHz Output Compression Output P1dB* Output Performance with CW Baseband Inputs Low Band Mode (GSM850/GSM900), cont’d Mode=Low Band FLOx1 (see Control Logic Truth Table for Mode Control Settings) Intermodulation Output IP3* +20.0 dBm GC=2.0V. Extrapolated from IM3 with two baseband tones at 90kHz and 110kHz applied differentially, in quadrature, at both I and Q inputs, each tone 400mVP-P. Intermodulation IM3 tone at FC +70kHz and FC +130kHz relative to tones at FC +90kHz and FC +110kHz -48 dBc GC=2.0V Low Band Bypass Mode (GSM850/GSM900) Mode=Low Band Bypass (see Control Logic Truth Table for Mode Control Settings) PA Driver GMSK Input Power* GMSK Output Power Output Impedance* -3 5.0 0 7.5 50 -161 -159 +3 10.0 dBm dBm Ω dBc/Hz AM+PM noise, LO=0dBm VCC =2.7V At LO LB input from a 50 Ω source. At RF LB output Output Noise At FC ±20MHz* * Not tested in Production ** Provides the same output power as modulated signal with associated crest factor. Rev A0 DS060206 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 7 of 26 RF2705G Specification Unit Min. Typ. Max. Output Performance with CW Baseband Inputs High Band Mode (DCS1800/PCS1900) Mode=High Band FLOx1 (see Control Logic Truth Table for Mode Control Settings) Parameter VGA and PA Driver Output Power 8PSK Modulated* Output Power CW * -44 Gain Control Voltage Range Gain Control Range Gain Control Slope 0.2 42 28 -45 -45 -45 -45 -45 -40 -40 * -40 -39 -37 3rd Harmonic of Modulation Suppression at FC-3x300kHz -50 -30 -30 -30 -30 -30 -34 -34 -33 -30 -30 -40 0 0 2.2 2 -1.6 -17.6 -30 -40 -37 2.0 +6.0 dBm dBm dBm dBm dBm dBm V dB dB/V dBc dBc dBc dBc dBc dBc dBc dBc dBc dBc dBc Difference between output power at GC=2.0V and GC=0.2V Calculated between GC=0.5V and 1.5V GC=2.0V, No I/Q adjustment GC=1.5V, No I/Q adjustment GC=1.0V, No I/Q adjustment GC=0.5V, No I/Q adjustment GC=0.2V, No I/Q adjustment GC=2.0V, No I/Q adjustment GC=1.5V, No I/Q adjustment GC=1.0V, No I/Q adjustment GC=0.5V, No I/Q adjustment GC=0.2V, No I/Q adjustment GC=2.0V FLOx2 Mode GC=2.0V, I/Q=800mVP-P at 100kHz -70.0 -25.0 -40.0 +8.0 dBm dBm dBm dBm FLO LB leakage Second harmonic of carrier Third harmonic of carrier I/Q=100kHz Condition VCC =2.7V, T=+25°C, LO=1710MHz to 1910MHz at 0dBm, IQ=800mVP-P** at 100kHz, unless otherwise noted GC=2.0V, IQ=1.2VP-P 8PSK GC=2.0V, IQ=800mVP-P at 100kHz GC=1.5V, IQ=800mVP-P at 100kHz GC=1.0V, IQ=800mVP-P at 100kHz GC=0.5V, IQ=800mVP-P at 100kHz GC=0.2V, IQ=800mVP-P at 100kHz Modulator Sideband Suppression * * * * Carrier Suppression Spurious Outputs Spurious Outputs at Integer Harmonics of 1/2xFLOHB FLO LB 4xFLO LB 6xFLO LB Output Compression Output P1dB* * Not tested in Production ** Provides the same output power as modulated signal with associated crest factor. 8 of 26 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A0 DS060206 RF2705G Specification Unit Min. Typ. Max. Output Performance with CW Baseband Inputs High Band Mode (DCS1800/PCS1900), cont’d Mode=High Band FLOx1 (see Control Logic Truth Table for Mode Control Settings) Parameter Intermodulation Output IP3* +20 dBm GC=2.0V. Extrapolated from IM3 with two baseband tones at 90kHz and 110kHz applied differentially, in quadrature, at both I and Q inputs, each tone 400mVP-P. Condition Intermodulation IM3 tone at FC +70kHz and FC +130kHz relative to tones at FC +90kHz and FC +110kHz -53 -42 dBc GC=2.0V Output Performance with CW Baseband Inputs Wideband Mode Mode=Wideband FLOx2 (see Control Logic Truth Table for Mode Control Settings) VGA and PA Driver Output Power W-CDMA Modulated* Output Power CW Gain Control Voltage Range Gain Control Range Gain Control Slope 2 0.2 92 73 -48 -50 -50 -50 -42 -41 -38 -23 3rd Harmonic of Modulation Suppression at FC-3x300kHz -55 -30 -30 -30 -30 -30 -30 -30 -10 -50 5 5 8 2.0 dBm dBm V dB dB/V dBc dBc dBc dBc dBc dBc dBc dBc dBc Difference between output power at GC=2.0V and GC=0.2V Calculated between GC=1.0V and 0.5V GC=2.0V, No I/Q adjustment GC=1.5V, No I/Q adjustment GC=1.0V, No I/Q adjustment GC=0.5V, No I/Q adjustment GC=2.0V, No I/Q adjustment GC=1.5V, No I/Q adjustment GC=1.0V, No I/Q adjustment GC=0.5V, No I/Q adjustment GC=2.0V VCC =2.7V, T=+25°C, LO=975MHz to 990MHz at -10dBm, IQ=540mVP-P** at 100kHz, unless otherwise noted GC=2.0V, IQ=0.8VP-P at HQPSK GC=2.0V Modulator Sideband Suppression * * * Carrier Suppression Spurious Outputs Spurious Output at Integer Multiples of FLO LB* FLO LB 4xFLO LB 6xFLO LB -60.0 -14.0 -47.0 +11.5 0 0 dBm dBm dBm dBm GC=2.0V, I/Q=540mVP-P at 100kHz FLO LB leakage Second harmonic of carrier Third harmonic of carrier I/Q=100kHz Output Compression Output P1dB* Rev A0 DS060206 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 9 of 26 RF2705G Parameter Intermodulation Output IP3* +20 dBm GC=2.0V. Extrapolated from IM3 with two baseband tones at 90kHz and 110kHz applied differentially, in quadrature, at both I and Q inputs, each tone 400mVP-P. GC=2.0V Min. Specification Typ. Max. Unit Condition Intermodulation IM3 tone at FC +70kHz and FC +130kHz relative to tones at FC +90kHz and FC +110kHz -37 dBc -40 dBc GC=1.5V High Band Bypass Mode (DCS1800/PCS1900) Mode=High Band Bypass (see Control Logic Truth Table for Mode Control Settings) PA Driver GMSK Input Power* GMSK Output Power Output Impedance* -3 4.0 0 6.8 50 -161 -159 +3 9.0 dBm dBm Ω dBc/Hz AM+PM noise, LO=0dBm VCC =2.7V At LO LB input from a 50 Ω source. At RF LB output Output Noise At FC ±20MHz* * Not tested in Production ** Provides the same output power as modulated signal with associated crest factor. 10 of 26 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A0 DS060206 RF2705G Parameter General Specifications Operating Range Supply Voltage Temperature 2.7 -40 3.3 +85 V °C Refer to Logic Control Truth Table for Mode Control Pin Voltages. Sleep Wideband FLOx1 (high power) * (medium power) * (low power) * Wideband FLOx2 (high power) (medium power) (low power) High Band FLOx2 Low Band FLO/2 High Band Bypass Low Band Bypass High Band FLOx1 Low Band FLOx1