0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
RF2850PCBA

RF2850PCBA

  • 厂商:

    RFMD(威讯)

  • 封装:

  • 描述:

    RF2850PCBA - DIRECT QUADRATURE MODULATOR - RF Micro Devices

  • 数据手册
  • 价格&库存
RF2850PCBA 数据手册
RF2850 0 RoHS Compliant & Pb-Free Product Typical Applications • UMTS Base Stations • CDMA Base Stations • GSM-EDGE/EGSM Base Stations Product Description The RF2850 is a direct quadrature modulator for use in base stations and other communications systems. RF2850 supports PCS, GSM, EDGE, CDMA2000, and UMTS standards. This device features a narrow-band operation at 1700MHz to 2500MHz with excellent carrier and sideband suppression and ultra low noise floor. The device is manufactured on an advanced GaAs HBT process. The RF2850 operates from a single 5V supply and is packaged in a low cost 4mmx4mm 16-pin leadless package. -A2 PLCS 0.10 C A 0.05 C DIRECT QUADRATURE MODULATOR • WLAN and WLL Systems • GMSK,QPSK,DQPSK,QAM Modulation 4.00 SQ. 2.00 TYP 0.10 C B 2 PLCS 0.70 0.65 0.90 0.85 0.05 0.00 12° MAX 0.10 C B 2 PLCS -B-C- 1.87 TYP 3.75 SQ 0.10 C A 2 PLCS SEATING PLANE Shaded lead is pin 1. Dimensions in mm. 0.10 M C A B 0.60 0.24 TYP 0.35 0.23 Pin 1 ID 0.20 R 2.25 SQ. 1.95 0.75 TYP 0.50 0.65 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS Package Style: QFN, 16-Pin, 4x4 Features • Typical Carrier Suppression>40dBc • Typical Sideband Suppression>40dBc • Noise Floor better than -158dBm/Hz • Single 5V Power Supply QREF QSIG 14 16 GND 1 LO 2 15 13 12 RFOUT 11 GND -45° +45° Σ LOREF 3 GND 4 5 VCC 6 IREF 7 ISIG 8 GND GND 10 VCC 9 RFREF VCC Ordering Information RF2850 RF2850 PCBA Direct Quadrature Modulator Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A0 050616 5-51 RF2850 Absolute Maximum Ratings Parameter Supply Voltage LO Input Operating Temperature Storage Temperature Rating -0.5 to +5.3 +10 -40 to +85 -65 to +150 Unit V dBm °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. RoHS marking based on EUDirective2002/95/EC (at time of this printing). However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Specification Unit Min. Typ. Max. High Band Performance (1900MHz) with CW Baseband Inputs Parameter LO Input Port LO Drive Level LO Input Impedance LO Port Return Loss -5 50 13 DC 2.05 0.25 200 40 130 40 1700 -6 15 5 25 55 45 52 20 -158 2500 250 dBm Ω dB MHz V VP-P kHz kΩ MHz μA MHz dBm dB dBm dBc dBc dBc dBc dBm dBm/Hz Condition Modulation Input Frequency Range Reference Voltage Baseband Input Level I/Q Signal Input Impedance Bandwidth (-1dB) Input Bias Current Baseband common mode voltage 0.25VP-P per pin, 500mV VP-P differential, I/Q in quadrature CW baseband signal Measured at DC 500mV VP-P differential, I/Q at 2.05V DC I/Q Modulator Output RF Frequency Range RF Output Power RF Output Return Loss RF Output P1dB Carrier Suppression Carrier Suppression Sideband Suppression IM3 Suppression Output IP3 Broadband Noise Floor T=25°C, VCC =5V 4 20 35 30 Unadjusted (see note) Adjusted. T=-40°C to +85°C Unadjusted Two tone baseband input @ 500mVP-P differential per tone 20MHz offset from LO, all IQ input at bias of 2.05V 15 -156 DC Parameters Supply Voltage V Specification V Operating limits Supply Current 60 mA Note: 20dBc limit for unadjusted carrier suppression is applicable for differential I and Q inputs only. 4.75 5.25 5.0 5-52 Rev A0 050616 RF2850 Specification Unit Min. Typ. Max. High Band Performance with PCS CDMA and W-CDMA Baseband Inputs Parameter W-CDMA 3GPP Channel Power ACPR @ 1960MHz SNR @ 1960MHz ACPR @ 2140MHz SNR @ 2140MHz Noise Floor @ 20MHz Offset -13 -68 -74 -65 -74 -156 -13 -72 -14 -74 -85 -157 -71 -82 -156 -62 -70 -62 -70 -155 dBm dBc dBc dBc dBc dBm/Hz dBm dBc dBm dBc dBc dBm/Hz 3.84MHz integrated bandwidth, ESG-D with LPF Condition 20MHz offset from LO 1.2288MHz integrated bandwidth 30kHz integrated bandwidth 1MHz integrated bandwidth at adjacent channel PCS CDMA Channel Power ACPR @ 1960MHz -70 W-CDMA 1MHz BW Channel Power ACPR @ 2140MHz SNR @ 2140MHz Noise Floor @ 20MHz Offset 20MHz offset from LO Rev A0 050616 5-53 RF2850 Pin 1 2 3 4 5 6 Function GND LO LOREF GND VCC I REF Description Ground connection. LO input signal. This pin has an internal DC-blocking capacitor. This port is voltage-driven so matching at different frequencies is generally not required. The reference end of local oscillator. Ground connection. Power supply. An external capacitor is required. Reference voltage for the I mixer. The DC voltage should be the same as the DC supplied to I SIG (pin 7). See pin 7 for more information. The SIG and REF inputs are inputs of a differential amplifier. Therefore, the REF and SIG inputs are interchangeable. If swapping the I SIG and I REF pins, the Q SIG and Q REF also need to be swapped to maintain the correct phase. It is also possible to drive the SIG and REF inputs in a differential mode which will increase gain. Baseband input to the I mixer. This pin is DC-coupled. The input drive level determines output power and linearity performance. For better carrier/sideband suppression and dynamic range, the drive level should be as high as possible to meet the required linearity performance. The recommended DC level for this pin is 2.05V. VCC LO Interface Schematic 2 pF 7 I SIG VCC 2 pF 8 9 10 11 12 GND RFREF VCC GND RF OUT Ground connection. The reference end of RF input. Power supply. An external capacitor is required. Ground connection. RF Output. This pin has an internal DC-blocking capacitor. At some frequencies, external matching may be needed to optimize output power. RF OUT 13 14 GND Q SIG Ground connection. Baseband input to the Q mixer. This pin is DC-coupled. The input drive level determines the output power and linearity performance. For better carrier/sideband suppression and dynamic range, the drive level should be as high as possible to meet the required linearity performance. The recommended DC level for this pin is 2.05V. VCC 2 pF 15 Q REF Reference voltage for the Q mixer. See pin 14 for more information. VCC 2 pF 16 Pkg Base VCC GND Power supply. An external capacitor is required. Ground connection. 5-54 Rev A0 050616 RF2850 Evaluation Board Schematic 1700MHz to 2500MHz (Differential Drive) J2 QREF 50 Ω μstrip 50 Ω μstrip J4 QSIG VCC1 C9 100 pF L1 1 nH 1 2 -45° 16 15 14 13 12 11 C12 3.9 pF C14 0.5 pF 50 Ω μstrip J6 RF OUT J1 LO 50 Ω μstrip X1 2.1 GHz L2 1 nH +45° Σ 3 4 5 6 7 8 10 9 C13 3.9 pF X2 2.1 GHz VCC C10 100 pF VCC2 J3 IREF VIN 50 Ω μstrip L3 100 nH VCC1 C1 2.2 pF L4 100 nH VCC2 C3 100 pF 50 Ω μstrip J5 ISIG P1 Rev A0 050616 5-55 RF2850 Evaluation Board Layout Board Size 2.00” x 2.00” Board Thickness 0.042” (±10%), Board Material FR-4 5-56 Rev A0 050616
RF2850PCBA 价格&库存

很抱歉,暂时无法提供与“RF2850PCBA”相匹配的价格&库存,您可以联系我们找货

免费人工找货