RF3100-2

RF3100-2 2 Typical Applications • 3V CDMA/AMPS Cellular Handsets • 3V CDMA2000/1X Cellular Handsets • Spread-Spectrum Systems • Designed for Compatibility with Qualcomm Chipsets 3V 900MHZ LINEAR AMPLIFIER MODULE 2 POWER AMPLIFIERS 4.390 6.0 sq 0.100 Dimensions in mm. Product Description The RF3100-2 is a high-power, high-efficiency linear amplifier module targeting 3V hand-held systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dualmode 3V CDMA/AMPS hand-held digital cellular equipment, spread-spectrum systems, and other applications in the 824MHz to 849MHz band. The RF3100-2 has a digital control line for low power application to reduce the current drain. The device is self-contained with 50 Ω input and output that is matched to obtain optimum power, efficiency, and linearity characteristics. The module is an ultra-small 6mmx6mm land grid array with backside ground. Optimum Technology Matching® Applied Si BJT Si Bi-CMOS 3.000 0.100 0.800 sq typ 1.700 2.500 NOTE: Nominal thickness, 1.55 mm. 0.600 ü Package Style: LGM (6mmx6mm) GaAs HBT SiGe HBT GaAs MESFET Si CMOS Features • Input/Output Internally Matched@50 Ω • Single 3V Supply • 28dBm Linear Output Power • 29dB Linear Gain VCC1 1 7 GND RF IN 2 6 RF OUT • 45mA Idle Current VREG 3 4 VMODE 5 VCC2 Ordering Information RF3100-2 3V 900MHz Linear Amplifier Module RF3100-2 PCBA Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A3 011017 2-269 RF3100-2 Absolute Maximum Ratings Parameter Supply Voltage (RF off) Supply Voltage (POUT ≤ 31dBm) Control Voltage (VREG) Rating +8.0 +5.2 +4.2 +10 +3.5 -30 to +110 -30 to +150 Unit VDC VDC VDC dBm VDC °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). 2 POWER AMPLIFIERS Input RF Power Mode Voltage (VMODE) Operating Case Temperature Storage Temperature Parameter High Power State (VMODE Low) Frequency Range Linear Gain Second Harmonic Third Harmonic Maximum Linear Output Power (CDMA Modulation) Total Linear Efficiency Adjacent Channel Power Rejection Input VSWR Output VSWR Noise Power Specification Min. Typ. Max. Unit Condition Typical Performance at VCC =3.2V, VREG =2.85V, TAMB =25°C, Frequency=824MHz to 849MHz (unless otherwise specified) 824 26 849 29 -35 -40 28 35 -48 -57.0 -45 -54.5 -70dBc At 45MHz offset. Typical Performance at VCC =3.2V, VREG =2.85V, TAMB =25°C, Frequency=824MHz to 849MHz (unless otherwise specified) -135 dBm/Hz Low Power State (VMODE High) Frequency Range Linear Gain Second Harmonic Third Harmonic Maximum Linear Output Power (CDMA Modulation) Adjacent Channel Power Rejection Input VSWR Output VSWR 824 18 849 21 -35 -40 MHz dB dBc dBc dBm dBc dBc 16 -51 -62 -46 -59 2.5:1 10:1 6:1 ACPR @885kHz, POUT =Max POUT ACPR @1980kHz, POUT =Max POUT No damage. No oscillations. >-70dBc 2-270 Rev A3 011017 RF3100-2 Parameter Specification Min. Typ. Max. Unit Condition Typical Performance at VCC =3.2V, VREG =2.85V, TAMB =25°C, Frequency=824MHz to 849MHz (unless otherwise specified) 824 28 -35 -40 31.5 44