RF3100-3K

RF3100-3K 2 Typical Applications • 3V CDMA Korean-PCS Handsets • Spread-Spectrum Systems • Designed for Compatibility with Qualcomm Chipsets 3V 1700MHZ LINEAR AMPLIFIER MODULE 2 POWER AMPLIFIERS 4.390 6.0 sq 0.100 Dimensions in mm. Product Description The RF3100-3K is a high-power, high-efficiency linear amplifier IC targeting 3V hand-held systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dualmode 3V CDMA hand-held digital cellular equipment, spread-spectrum systems, and other applications in the 1750MHz to 1780MHz band. The RF3100-3K has a digital control line for low power application to reduce the current drain. The device is self-contained with 50 Ω input and output that is matched to obtain optimum power, efficiency, and linearity characteristics. The module is an ultra-small 6mmx6mm land grid array with backside ground. Optimum Technology Matching® Applied Si BJT Si Bi-CMOS 3.000 0.100 0.800 sq typ 1.700 2.500 NOTE: Nominal thickness, 1.55 mm. 0.600 ü Package Style: LGM (6mmx6mm) GaAs HBT SiGe HBT GaAs MESFET Si CMOS Features • Input/Output Internally Matched@50 Ω • Single 3V Supply • 28dBm Linear Output Power • -141dBm/Hz Noise Power VCC1 1 7 GND RF IN 2 6 RF OUT • 35% Linear Efficiency • 45mA Idle Current (Low Power Mode) VREG 3 4 VMODE 5 VCC2 Ordering Information RF3100-3K 3V 1700MHz Linear Amplifier Module RF3100-3K PCBA Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A3 011017 2-273 RF3100-3K Absolute Maximum Ratings Parameter Supply Voltage (RF off) Supply Voltage (POUT ≤ 29dBm) Control Voltage (VREG) Rating +8.0 +5.2 +4.2 +3.5 +10 -30 to +110 -30 to +150 Unit VDC VDC VDC VDC dBm °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). 2 POWER AMPLIFIERS Mode Voltage (VMODE) Input RF Power Operating Case Temperature Storage Temperature Parameter High Power State (VMODE Low) Frequency Range Linear Gain Second Harmonic Third Harmonic Maximum Linear Output Power (CDMA Modulation) Total Linear Efficiency Adjacent Channel Power Rejection Input VSWR Output VSWR Noise Power Specification Min. Typ. Max. Unit Condition Typical Performance at VCC =3.2V, VREG =2.85V, TAMB =25°C, Frequency=1750MHz to 1780MHz (unless otherwise specified) 1750 25.5 1780 27.5 -49 -52 28 35 -46 -60 -70dBc At 90MHz offset. Typical Performance at VCC =3.2V, VREG =2.85V, TAMB =25°C, Frequency=1750MHz to 1780MHz (unless otherwise specified) dBm/Hz Low Power State (VMODE High) Frequency Range Linear Gain Second Harmonic Third Harmonic Maximum Linear Output Power (CDMA Modulation) Adjacent Channel Power Rejection Input VSWR Output VSWR 1750 17 1780 20 -49 -52 MHz dB dBc dBc dBm dBc dBc 16 -52 -66 -70dBc 2-274 Rev A3 011017 RF3100-3K Parameter DC Supply Supply Voltage Quiescent Current VREG Current VMODE Current Turn On/Off Time Total Current (Power Down) VREG “Low” Voltage VREG “High” Voltage VMODE “Low” Voltage VMODE “High” Voltage 3.2 3.7 170 50 6 4.2 240 80 10 1.5 6 10 0.5 2.9 0.5 3.0 V mA mA mA mA µs µA V V V V Specification Min. Typ. Max. Unit TAMB =25°C Condition VMODE =Low, VREG =2.85V VMODE =High, VREG =2.85V 2 POWER AMPLIFIERS 5 0 2.8 0 2.0 2.85 VREG =Low, VMODE =Low Rev A3 011017 2-275 RF3100-3K Pin 1 2 3 Function VCC1 RF IN VREG VMODE VCC2 RF OUT GND GND Description First stage collector supply. A low frequency decoupling capacitor (e.g., 1 µF) is required. RF input internally matched to 50 Ω. This input is internally AC-coupled. Regulated voltage supply for amplifier bias. In Power Down mode, both VREG and VMODE need to be LOW (