RF3108

RF3108 2 Typical Applications • 3V Dual-Band/Triple-Band GSM Handsets • Commercial and Consumer Systems • Portable Battery-Powered Equipment • GPRS Compatible TRIPLE-BAND GSM/DCS/PCS POWER AMP MODULE 2 POWER AMPLIFIERS 10.0 + 0.10 1.00 typ. Product Description The RF3108 is a high-power, high-efficiency power amplifier module offering high performance in GSM or GPRS applications. The device is self-contained with 50 Ω input and output terminals. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM/DCS and PCS hand held-digital cellular equipment and other applications in the 880MHz to 915MHz and 1710MHz to 1910MHz bands. On-board power control provides over 70dB of control range with an analog voltage input, and provides power down with a logic "low" for standby operation. The device is packaged in an ultra-small (9mmx10mm) LCC, minimizing the required board space. 1.40 1.40 1.40 1.40 1.40 1.40 1.30 0.30 0.60 typ. 9.0 + 0.10 Note orientation of Pin 1. 0.90 typ. 0.38 Ref. 1.55 + 0.10 NOTE: Shaded area represents Pin 1. Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ü Package Style: Module GaAs HBT SiGe HBT GaAs MESFET Si CMOS Features • Single 2.9V to 4.7V Supply Voltage • +35.5dBm GSM Output Pwr at 3.5V VCC PCS IN PCS VAPC GND GSM VAPC GSM IN VCC 1 2 3 4 5 6 7 14 13 12 11 10 9 8 PCS OUT GND GND VCC GND GND GSM OUT • +33.0dBm DCS/PCS Output Pwr at 3.5V • 55% GSM and 50% DCS/PCS Efficiency • Supports GSM, E-GSM and DCS/PCS • 9mmx10mm Package Size Ordering Information RF3108 RF3108 PCBA Triple-Band GSM/DCS/PCS Power Amp Module Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A3 010702 2-261 RF3108 Absolute Maximum Ratings Parameter Supply Voltage Power Control Voltage (VAPC1,2) DC Supply Current Input RF Power Duty Cycle at Max Power Output Load VSWR Operating Case Temperature Storage Temperature Rating -0.5 to +6.0 -0.5 to +3.0 2400 +13 50 8:1 -40 to +85 -55 to +150 Unit VDC V mA dBm % °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). 2 POWER AMPLIFIERS Parameter Overall (GSM Mode) Operating Frequency Range Maximum Output Power Total Efficiency Input Power for Max Output Output Noise Power Specification Min. Typ. Max. Unit Condition Temp=+25°C, VCC =3.5V, VAPCGSM =2.6V, PIN =6dBm, Freq=880MHz to 915MHz, 25% Duty Cycle, Pulse Width=1154 µs +34.5 +32.0 47 +4 880 to 915 35.5 55 +6 +8 -72 -81 MHz dBm dBm % dBm dBm dBm dBm dBc dBc dBm Ω Temp = 25°C, VCC =3.5V, VAPCGSM =2.6V Temp=+85 °C, VCC =2.9V, VAPCGSM =2.6V At POUT,MAX, VCC =3.5V RBW=100kHz, 925MHz to 935MHz, POUT > 34.5dBm RBW=100kHz, 935MHz to 960MHz, POUT > 34.5dBm VAPCGSM =0.2V, PIN=+8dBm Forward Isolation Second Harmonic Third Harmonic All other non harmonic spurious Input Impedance Input VSWR Output Load VSWR Output Load Impedance -40 -50 50 -30 -35 -43 -36 2.5:1 8:1 50 2.6 0.2 Ω V V dB dB/V pF mA µA µS V V A µA POUT,MAX-5dB