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RF3108PCBA-41X

RF3108PCBA-41X

  • 厂商:

    RFMD(威讯)

  • 封装:

  • 描述:

    RF3108PCBA-41X - TRIPLE-BAND GSM/DCS/PCS POWER AMP MODULE - RF Micro Devices

  • 详情介绍
  • 数据手册
  • 价格&库存
RF3108PCBA-41X 数据手册
RF3108TripleBand GSM/DCS/PC S Power Amp Module RF3108 TRIPLE-BAND GSM/DCS/PCS POWER AMP MODULE Package Style: Module (9mmx10mm) Features Single 2.9V to 4.7V Supply Voltage +35.5dBm GSM Output Pwr at 3.5V +33.0dBm DCS/PCS Output Pwr at 3.5V 55% GSM and 50% DCS/PCS Efficiency Supports GSM, E-GSM and DCS/PCS 9 mmx10mm Package Size VCC PCS IN PCS VAPC GND GSM V APC GSM IN VCC 1 2 3 4 5 6 7 14 13 12 11 10 9 8 PCS OUT GND GND VCC GND GND GSM OUT Applications 3 V Dual-Band/Triple-Band GSM Handsets Commercial and Consumer Systems Portable Battery-Powered Equipment GPRS Class 12 Compatible Functional Block Diagram Product Description The RF3108 is a high-power, high-efficiency power amplifier module offering high performance in GSM or GPRS applications. The device is self-contained with 50 Ω input and output terminals. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM/DCS and PCS handheld digital cellular equipment and other applications in the 880MHz to 915MHz and 1710MHz to 1910MHz bands. On-board power control provides over 70dB of control range with an analog voltage input, and provides power down with a logic “low” for standby operation. The device is packaged in an ultra-small (9mmx10mm) LCC, minimizing the required board space. Ordering Information RF3108 RF3108PCBA-41X Triple-Band GSM/DCS/PCS Power Amp Module Fully Assembled Evaluation Board Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Rev A7 DS051003 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 12 RF3108 Absolute Maximum Ratings Parameter Supply Voltage Power Control Voltage (VAPC1,2) DC Supply Current Input RF Power Duty Cycle at Max Power Output Load VSWR Operating Case Temperature Storage Temperature Rating -0.5 to +6.0 -0.5 to +3.0 2400 +13 50 8:1 -40 to +85 -55 to +150 Unit VDC V mA dBm % °C °C Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Parameter Overall (GSM Mode) Operating Frequency Range Maximum Output Power Min. Specification Typ. Max. Unit Condition Temp=+25°C, VCC =3.5V, VAPCGSM =2.6V, PIN =6dBm, Freq=880MHz to 915MHz, 25% Duty Cycle, Pulse Width=1154 μs 880 to 915 +34.5 34.0 +32.0 35.5 MHz dBm dBm dBm Temp = 25°C, VCC =3.5V, VAPCGSM =2.6V 50% Duty Cycle, Pulse Width=2308 μs Temp=+85 °C, VCC =2.9V, VAPCGSM =2.6V At POUT,MAX, VCC =3.5V RBW=100kHz, 925MHz to 935MHz, POUT > 34.5dBm RBW=100kHz, 935MHz to 960MHz, POUT > 34.5dBm VAPCGSM =0.2V, PIN=+8dBm Total Efficiency Input Power for Max Output Output Noise Power 47 +4 55 +6 +8 -72 -81 % dBm dBm dBm dBm dBc dBc dBm Ω 2.5:1 Forward Isolation Second Harmonic Third Harmonic All other non harmonic spurious Input Impedance Input VSWR Output Load VSWR Output Load Impedance 8:1 50 2.6 0.2 0.5 70 100 50 -40 -50 -30 -35 -43 -36 POUT,MAX-5dB
RF3108PCBA-41X
物料型号: - 型号:RF3108 - 描述:TRIPLE-BAND GSM/DCS/PCS POWER AMP MODULE - 封装风格:Module (9mmx10mm)

器件简介: - RF3108是一款高功率、高效率的功率放大器模块,适用于GSM或GPRS应用。该设备包含50Ω的输入和输出端。采用先进的GaAs HBT工艺制造,设计用于作为GSM/DCS和PCS手持数字蜂窝设备及其他应用中的最终RF放大器,工作频段为880MHz至915MHz和1710MHz至1910MHz。板上功率控制提供超过70dB的控制范围,通过模拟电压输入,并在待机操作中通过逻辑“低”实现功率下降。该设备采用超小型(9mmx10mm)LCC封装,最小化所需板空间。

引脚分配: - Pin 1: VCC1,DCS/PCS频段驱动级的电源。 - Pin 2: DCS/PCS IN,DCS/PCS频段的RF输入,这是一个50Ω输入。 - Pin 3: DCS/PCS VAPC,DCS/PCS频段的预放大器、驱动和输出阶段的功率控制。 - Pin 4: GND,整体封装的接地连接。 - Pin 5: GSM VAPC,GSM频段的预放大器、驱动和输出阶段的功率控制。 - Pin 6: GSM IN,GSM频段的RF输入,这是一个50Ω输入。 - Pin 7: VCC2,GSM频段驱动级的电源。 - Pin 8: GSM OUT,GSM频段的RF输出,这是一个50Ω输出。 - Pin 9, 10, 12, 13: GND,整体封装的接地连接。 - Pin 11: VCC3,DCS/PCS和GSM频段的预放大器和输出阶段的电源。 - Pin 14: DCS/PCS OUT,DCS/PCS频段的RF输出,这是一个50Ω输出。

参数特性: - 单2.9V至4.7V供电电压。 - 在3.5V下,GSM输出功率为+35.5dBm,DCS/PCS输出功率为+33.0dBm。 - GSM效率为55%,DCS/PCS效率为50%。 - 支持GSM、E-GSM和DCS/PCS。 - 9mmx10mm封装尺寸。

功能详解应用信息: - 适用于3V双频/三频GSM手机、商业和消费系统、便携式电池供电设备。 - 兼容GPRS Class 12。

封装信息: - 封装风格:Module (9mmx10mm)。 - 封装图示:文档中提供了封装的详细图纸。
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