RF3117PCBA

Preliminary RF3117 3V 900MHZ LINEAR AMPLIFIER MODULE 2 Typical Applications • 3V CDMA/AMPS Cellular Handsets • 3V CDMA2000/1X Cellular Handsets • Compatible with Qualcomm Chipset • Spread-Spectrum Systems 2 POWER AMPLIFIERS 4.390 6.0 sq 0.100 Dimensions in mm. Product Description The RF3117 is a high-power, high-efficiency linear amplifier module targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CDMA/AMPS handheld digital cellular equipment, spread-spectrum systems, and other applications in the 824MHz to 849MHz band. The RF3117 has a digital control line for low power application to reduce the current drain. The device is self-contained with 50 Ω input and output that is matched to obtain optimum power, efficiency, and linearity characteristics. The module is an ultra-small 6mmx6mm land grid array with backside ground. Optimum Technology Matching® Applied Si BJT Si Bi-CMOS 3.000 0.100 0.800 sq typ 1.700 2.500 NOTE: Nominal thickness, 1.55 mm. 0.600 ü Package Style: LGM (6mmx6mm) GaAs HBT SiGe HBT GaAs MESFET Si CMOS Features • Input/Output Internally Matched@50 Ω • Single 3V Supply • 30dBm Linear Output Power • 30dB Linear Gain VCC1 1 7 GND RF IN 2 6 RF OUT • 33% Linear Efficiency • 55mA Idle Current VREG 3 4 VMODE 5 VCC2 Ordering Information RF3117 RF3117 PCBA 3V 900MHz Linear Amplifier Module Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A0 011016 2-269 RF3117 Absolute Maximum Ratings Parameter Supply Voltage (RF off) Supply Voltage (POUT ≤ 31dBm) Control Voltage (VREG) Preliminary Rating +8.0 +5.2 +4.2 +10 +3.5 -30 to +110 -30 to +150 Unit VDC VDC VDC dBm VDC °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). 2 POWER AMPLIFIERS Input RF Power Mode Voltage (VMODE) Operating Case Temperature Storage Temperature Parameter High Power State (VMODE Low) Frequency Range Linear Gain Second Harmonic Third Harmonic Maximum Linear Output Power (CDMA Modulation) Total Linear Efficiency Adjacent Channel Power Rejection Input VSWR Output VSWR Noise Power Specification Min. Typ. Max. Unit Condition Typical Performance at VCC =3.2V, VREG =3V, TAMB =25°C, Frequency=824MHz to 849MHz (unless otherwise specified) 824 27 849 30 -35 -40 30 33 -46.5 -59 1.8:1 -45.0 -57 10:1 6:1 -135 29 MHz dB dBc dBc dBm % dBc dBc VCC =3.2V, POUT =29dBm (room temperature) ACPR @885kHz, POUT =Max POUT ACPR @1980kHz, POUT =Max POUT No damage. No oscillations. >-70dBc At 45MHz offset. Typical Performance at VCC =3.2V, VREG =3V, TAMB =25°C, Frequency=824MHz to 849MHz (unless otherwise specified) dBm/Hz Low Power State (VMODE High) Frequency Range Linear Gain Second Harmonic Third Harmonic Maximum Linear Output Power (CDMA Modulation) Adjacent Channel Power Rejection Output VSWR 824 17.5 849 21 -35 -40 20 -52 -62 -44 -55 10:1 6:1 MHz dB dBc dBc dBm dBc dBc 16 ACPR @885kHz, POUT =Max POUT ACPR @1980kHz, POUT =Max POUT No damage. No oscillations. >-70dBc 2-270 Rev A0 011016 Preliminary Parameter Specification Min. Typ. Max. Unit RF3117 Condition Typical Performance at VCC =3.2V, VREG =3V, TAMB =25°C, Frequency=824MHz to 849MHz (unless otherwise specified) 824 30 -32 -40 31.5 42