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RF3145_1

RF3145_1

  • 厂商:

    RFMD(威讯)

  • 封装:

  • 描述:

    RF3145_1 - QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE - RF Micro Devices

  • 数据手册
  • 价格&库存
RF3145_1 数据手册
RF3145QuadBand GSM/EDGE/G SM850/DCS/ PCS Power Amplifier Module RF3145 QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE RoHS Compliant & Pb-Free Product Package Style: Module (10 mm x 10 mm) Features Integrated Power Control & Band Select Single 3.0V to 4.8V Supply Voltage +35.0dBm GSM Output Pwr at 3.5V +33dBm DCS/PCS Output Pwr at 3.5V +29dBm 8PSK Output Pwr 53% GSM and 50% DCS/PCS PAE NC 12 DCS IN 1 BAND SELECT 2 TX ENABLE 3 VBATT 4 VMODE 5 VRAMP 6 GSM IN 7 8 NC 9 GSM OUT 10 NC 11 DCS OUT Applications 3 V Dual/Triple/Quad-Band Mode Handsets Portable Battery-Powered Equipment GSM850 and GSM900 Products Commercial and Consumer Systems EDGE and GPRS Class 12 Compatible DCS/PCS Products Functional Block Diagram Product Description The RF3145 is a high power, high efficiency power amplifier module with integrated power control. This module is self-contained with 50 Ω input and output terminals. The device is manufactured on an advance Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final dual-mode GMSK/8PSK RF amplifier in GSM, DCS and PCS hand-held cellular equipment and other applications in the 824MHz to 849MHz, 880MHz to 915MHz, and in the 1710MHz to 1910MHz bands. Internal band select provides control to select the GSM850/GSM900 or DCS/PCS band. The device is packaged on ultra-small LCC, minimizing the required board space. Ordering Information RF3145 Quad-Band GSM/EDGE/GSM850/DCS/PCS Power Amplifier Module Power Amplifier Module, 5 Piece Sample Pack Fully Assembled Evaluation Board RF3145PCBA-41X Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Rev A4 DS050919 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 18 RF3145 Absolute Maximum Ratings Parameter Supply Voltage Power Control Voltage (VRAMP) Band Select TX Enable RF - Input Power Max Duty Cycle Output Load VSWR Operating Case Temperature Storage Temperature Rating -0.3 to +6.0 -0.3 to +1.8 3.0 3.0 12.0 50 10:1 -30 to +90 -55 to +150 Unit V V V V dBm % °C °C Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Parameter GSM US 850MHz Band Operating Frequency Range Maximum Output Power Min. Specification Typ. Max. Unit Condition Temp=+25 °C, VCC =3.5V, BandSel=Low, VMODE =Low, VRAMP =VRAMP,MAX, PIN =+4dBm Freq=824MHz to 849MHz, 25% Duty Cycle, Pulse Width=1154 μs, TX EN=High 824 +34.5 +35.4 +32.5 849 MHz dBm dBm Temp = 25°C, VCC =3.5V, VRAMP =VRAMP,MAX Temp=+85oC, VBATT =3.0V, VRAMP =VRAMP,MAX VRAMP =0.2V At POUT,MAX, VCC =3.5V At POUT =31.5dBm F0 =849MHz, other signal 829MHz at 40dBm, measured at 869MHz in 100kHz RBW (Max Power) RBW=100kHz, 869MHz to 894MHz, POUT > +5dBm TX_ENABLE=0V, VRAMP =0.2, PIN =+6dBm Over all power levels Over all power levels Measured at DCS/PCS port. Over all power levels. Over all power levels Spurious +5dBm TX_ENABLE=0V, VRAMP =0.2, PIN =+6dBm Over all power levels Over all power levels Measured at DCS/PCS port. Over all power levels. Over all power levels Spurious
RF3145_1 价格&库存

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