RF3160PCBA

Preliminary RF3160 DUAL-BAND GSM/DCS POWER AMP MODULE 2 Typical Applications • 3V Dual-Band GSM/DCS Handsets • Commercial and Consumer Systems • Portable Battery-Powered Equipment • GPRS Compatible • GSM, E-GSM and DCS Products 2 POWER AMPLIFIERS Product Description The RF3160 is a high-power, high-efficiency power amplifier module. The device is self-contained with 50 Ω input and output terminals. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in GSM/DCS handheld digital cellular equipment and other applications in the 880MHz to 915MHz and 1710MHz to 1785MHz bands. On-board power control provides over 70dB of control range with an analog voltage input, and provides power down with a logic "low" for standby operation. The device is packaged in an ultra-small (9mmx11mm) LCC, minimizing the required board space. 1.910 TYP 7.040 1 1.40 1.25 0.450 ±0.075 0.760 TYP 4.520 9.09 ±0.10 FULL RADIUS TYP R0.860 TYP Side View Dimensions in mm. All contact points are gold-plated, lead-free surfaces. 11.61 ± 0.10 0.920 TYP NOTES: Bottom View 1. Shaded area is pin 1. 2. All dimensions without specific tolerances are for reference only. Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ü BAND SELECT Package Style: Module (9mm x11mm) GaAs HBT SiGe HBT üSi CMOS VAPC GaAs MESFET Features • Single 2.8V to 5.0V Supply Voltage • +35.0dBm GSM Output Power at 3.2V • +32.5dBm DCS Output Power at 3.2V 13 GND 12 DCS OUT 11 GND 10 GSM OUT 9 GND 16 GND 1 DCS IN 2 GND 3 GSM IN 4 GND 5 6 VCC 15 GND 14 • 55% GSM and 50% DCS Efficiency • Internal Band Select Ordering Information RF3160 RF3160 PCBA Dual-Band GSM/DCS Power Amp Module Fully Assembled Evaluation Board 7 GND 8 VCC Functional Block Diagram RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A4 010420 2-261 RF3160 Absolute Maximum Ratings Parameter Supply Voltage Power Control Voltage (VAPC1,2) DC Supply Current Input RF Power Duty Cycle at Max Power Output Load VSWR Operating Case Temperature Storage Temperature Preliminary Rating -0.5 to +5.0 -0.5 to +3.0 2400 +15 50 6:1 -30 to +85 -30 to +85 Unit VDC V mA dBm % °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). 2 POWER AMPLIFIERS Parameter Overall (GSM Mode) Operating Frequency Range Maximum Output Power PAE Efficiency Input Power for Max Output Output Noise Power Specification Min. Typ. Max. Unit Condition Temp=+25°C, VCC =3.2V, VAPCGSM =1.9V, PIN =6dBm, Freq=880MHz to 915MHz, 25% Duty Cycle, Pulse Width=1154 µs 34.5 50 +6 880 to 915 35.0 55 +8 +10 -72 -84 MHz dBm % dBm dBm dBm dBm dBm dBm dBm dBm Ω Temp = 25°C, VCC =3.2V, VAPCGSM =1.9V At POUT,MAX, VCC =3.2V RBW=100kHz, 925MHz to 935MHz, POUT > 34.5dBm RBW=100kHz, 935MHz to 960MHz, POUT > 34.5dBm VAPCGSM =0.1V, PIN =-5dBm POUT > 34.5dBm 5dBm