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RF3163

RF3163

  • 厂商:

    RFMD(威讯)

  • 封装:

  • 描述:

    RF3163 - 3V 900MHZ LINEAR POWER AMPLIFIER MODULE - RF Micro Devices

  • 详情介绍
  • 数据手册
  • 价格&库存
RF3163 数据手册
RF3163 0 RoHS Compliant & Pb-Free Product Typical Applications • 3V CDMA/AMPS Cellular Handset • 3V CDMA2000/1XRTT Cellular Handset • 3V W-CDMA US-Cellular Handset Product Description The RF3163 is a high-power, high-efficiency linear amplifier module specifically designed for 3V handheld systems. The device is manufactured on an advanced third generation GaAs HBT process, and was designed for use as the final RF amplifier in 3V IS-95/CDMA2000-1X/ AMPS/W-CDMA handheld digital cellular equipment, spread-spectrum systems, and other applications in the 824MHz to 849MHz band. The RF3163 has a digital control line for low power applications to lower quiescent current. The RF3163 is assembled in a 16-pin, 3mmx3mm, QFN package. 3.00 Pin 1 ID A 3V 900MHZ LINEAR POWER AMPLIFIER MODULE • 3V CDMA2000/1X-EV-DO US-Cellular Handset • Spread-Spectrum System 1.45 Pin 1 ID 3.00 1.45 0.28 TYP 0.18 0.05 0.15 C 2 PLCS B 0.15 C 2 PLCS 0.40 TYP 0.20 0.10 M C A B 0.50 TYP Dimensions in mm. Shaded areas represent pin 1. 0.203 REF 0.08 C 0.08 C 0.925 0.775 0.102 REF C Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS Package Style: QFN, 16-Pin, 3x3 Features • Input Internally Matched@50 Ω • Output Internally Matched • 28dBm Linear Output Power • 41% Peak Linear Efficiency - CDMA • -51dBc ACPR @ 885kHz • 55% AMPS Efficiency NC NC 14 16 15 NC 13 NC 1 VREG 2 VMODE 3 RF IN 4 Bias NC 12 RF OUT 11 VCC2 10 VCC2 9 VCC2 Ordering Information RF3163 3V 900MHz Linear Power Amplifier Module RF3163PCBA-41XFully Assembled Evaluation Board 5 VCC1 6 NC 7 NC 8 GND Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A5 060504 2-689 RF3163 Absolute Maximum Ratings Parameter Supply Voltage (RF off) Supply Voltage (POUT ≤ 31dBm) Control Voltage (VREG) Input RF Power Mode Voltage (VMODE) Operating Temperature Storage Temperature Moisture Sensitivity Level (IPC/JEDEC J-STD-20) Rating +8.0 +5.2 +3.9 +10 +3.9 -30 to +110 -40 to +150 MSL 2 @ 260°C Unit V V V dBm V °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. RoHS marking based on EUDirective2002/95/EC (at time of this printing). However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter High Power Mode - CDMA (VMODE Low) Operating Frequency Range Linear Gain Second Harmonics Third Harmonics Maximum Linear Output Linear Efficiency Maximum ICC ACPR @ 885kHz ACPR @ 1.98MHz Input VSWR Stability in Band Stability out of Band Noise Power Specification Min. Typ. Max. Unit Condition T=25oC Ambient, VCC =3.4V, VREG =2.8V, VMODE =0V, and POUT =28dBm for all parameters (unless otherwise specified). 824 26.0 849 28.5 -35 -40 41 455 -51 -58 2:1 -30 -30 MHz dB dBc dBc % mA dBc dBc No oscillation>-70dBc No damage At 45MHz offset. T=25oC Ambient, VCC =3.4V, VREG =2.8V, VMODE =2.8V, and POUT =18dBm for all parameters (unless otherwise specified). 28 37 501 -46 -55 6:1 10:1 -133 dBm/Hz Low Power Mode - CDMA (VMODE High) Operating Frequency Range Linear Gain Maximum Linear Output Maximum ICC ACPR @885kHz ACPR @1.98MHz Input VSWR Output VSWR Stability 824 21 18 849 24 125 -51 -61 2:1 156 -46 -56 6:1 10:1 MHz dB mA dBc dBc POUT =16dBm No oscillation>-70dBc No damage 2-690 Rev A5 060504 RF3163 Parameter High Power Mode W-CDMA (VMODE Low) Operating Frequency Range Linear Gain Maximum Linear Output Linear Efficiency Maximum ICC ACLR @ 5MHz ACLR @ 10MHz 824 28.5 28 45 410 -41 -55 % mA dBc dBc T=25oC Ambient, VCC =3.4V, VREG =2.8V, VMODE =2.8V, and POUT =18dBm for all parameters (unless otherwise specified). 824 24 18 120 -41 -60 mA dBc dBc POUT =16dBm 849 MHz dB 849 MHz dB Specification Min. Typ. Max. Unit Condition T=25oC Ambient, VCC =3.4V, VREG =2.8V, VMODE =0V, and POUT =28dBm for all parameters (unless otherwise specified). Low Power Mode W-CDMA (VMODE High) Operating Frequency Range Linear Gain Maximum Linear Output Maximum ICC ACLR @ 5MHz ACLR @ 10MHz FM Mode Operating Frequency Range AMPS Maximum Output Power AMPS Efficiency AMPS Gain AMPS Second Harmonics AMPS Third Harmonics 824 48 25.5 31 55 28 -35 -40 3.4 55 45 4.5 250 849 MHz dBm % dBc dBc V mA mA mA uA uS uS uA V V V V V T=25oC Ambient, VCC =3.4V, VREG =2.8V, VMODE =0V, and POUT =31dBm for all parameters (unless otherwise specified). -30 -30 4.2 80 70 5.5 1000 6 40 2.0 0.5 2.95 3.0 0.5 3.0 Power Supply Supply Voltage High Gain Idle Current Low Gain Idle Current VREG Current VMODE Current RF Turn On/Off Time DC Turn On/Off Time Total Current (Power Down) VREG Low Voltage VREG High Voltage (Recommended) VREG High Voltage (Operational) VMODE Voltage 3.2 VMODE =low and VREG =2.8V VMODE =high and VREG =2.8V VMODE =high 0.2 0 2.75 2.7 0 2.0 2.8 High Gain Mode Low Gain Mode Rev A5 060504 2-691 RF3163 Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Pkg Base Function NC VREG VMODE RF IN VCC1 NC NC GND VCC2 VCC2 VCC2 RF OUT NC NC NC NC GND Description No connection. Do not connect this pin to any external circuit. Regulated voltage supply for amplifier bias circuit. In power down mode, both VREG and VMODE need to be LOW (2000 V NC >2000 V NC 14 800 V NC 16 15 13 750 V NC >2000 V NC 1 2000 V VREG 2 2000 V VMODE 3 2000 V RF IN 4 12 750 V RF OUT 11 750 V VCC2 10 2000 V VCC2 9 2000 V VCC2 5 2000 V VCC1 6 2000 V NC 7 >2000 V NC >300 V NC 8 GND 13 250 V NC Figure 3. ESD Level - Human Body Model Machine Model (MM) Figure 4 shows the MM ESD sensitivity level for each pin to ground. The ESD test is in compliance with JESD22-A115. >300 V NC 250 V NC 16 15 14 >300 V NC 1 200 V VREG 2 200 V VMODE 3 200 V RF IN 4 12 250 V RF OUT 11 275 V VCC2 10 200 V VCC2 9 200 V VCC2 5 150 V VCC1 6 200 V NC 7 >300 V NC 8 GND Figure 4. ESD Level - Machine Model 2-694 Rev A5 060504 RF3163 PCB Design Requirements PCB Surface Finish The PCB surface finish used for RFMD’s qualification process is electroless nickel, immersion gold. Typical thickness is 3 μinch to 8 μinch gold over 180 μinch nickel. PCB Land Pattern Recommendation PCB land patterns for PFMD components are based on IPC-7351 standards and RFMD empirical data. The pad pattern shown has been developed and tested for optimized assembly at RFMD. The PCB land pattern has been developed to accommodate lead and package tolerances. Since surface mount processes vary from company to company, careful process development is recommended. PCB Metal Land Pattern A = 0.64 x 0.28 (mm) Typ. B = 0.28 x 0.64 (mm) Typ. C = 0.64 x 1.28 (mm) D = 1.50 (mm) Sq. Dimensions in mm. 1.50 Typ. 0.50 Typ. Pin 16 B Pin 1 B B B Pin 12 A 0.50 Typ. A D A A 0.55 Typ. B 0.55 Typ. 0.75 Typ. B B B A 0.75 Typ. 1.00 Typ. C Pin 8 Figure 1. PCB Metal Land Pattern (Top View) Rev A5 060504 2-695 RF3163 PCB Solder Mask Pattern Liquid Photo-Imageable (LPI) solder mask is recommended. The solder mask footprint will match what is shown for the PCB metal land pattern with a 2mil to 3mil expansion to accommodate solder mask registration clearance around all pads. The center-grounding pad shall also have a solder mask clearance. Expansion of the pads to create solder mask clearance can be provided in the master data or requested from the PCB fabrication supplier. A = 0.74 x 0.38 (mm) Typ. B = 0.38 x 0.74 (mm) Typ. C = 1.60 (mm) Sq. Dimensions in mm. 1.50 Typ. 0.50 Typ. Pin 16 B Pin 1 B B B Pin 12 0.50 Typ. A A A A C A A A A B B B B Pin 8 0.75 1.50 Typ. 0.55 Typ. 0.55 Typ. 0.75 Figure 2. PCB Solder Mask Pattern (Top View) Thermal Pad and Via Design The PCB land pattern has been designed with a thermal pad that matches the die paddle size on the bottom of the device. Thermal vias are required in the PCB layout to effectively conduct heat away from the package. The via pattern has been designed to address thermal, power dissipation and electrical requirements of the device as well as accommodating routing strategies. The via pattern used for the RFMD qualification is based on thru-hole vias with 0.203mm to 0.330mm finished hole size on a 0.5mm to 1.2mm grid pattern with 0.025mm plating on via walls. If micro vias are used in a design, it is suggested that the quantity of vias be increased by a 4:1 ratio to achieve similar results. 2-696 Rev A5 060504 RF3163 Tape and Reel Information Carrier tape basic dimensions are based on EIA481. The pocket is designed to hold the part for shipping and loading onto SMT manufacturing equipment, while protecting the body and the solder terminals from damaging stresses. The individual pocket design can vary from vendor to vendor, but width and pitch will be consistent. Carrier tape is wound or placed onto a shipping reel either 330 mm (13 inches) in diameter or 178 mm (7 inches) in diameter. The center hub design is large enough to ensure the radius formed by the carrier tape around it does not put unnecessary stress on the parts. Prior to shipping, moisture sensitive parts (MSL level 2a-5a) are baked and placed into the pockets of the carrier tape. A cover tape is sealed over the top of the entire length of the carrier tape. The reel is sealed in a moisture barrier, ESD bag, which is placed in a cardboard shipping box. It is important to note that unused moisture sensitive parts need to be resealed in the moisture barrier bag. If the reels exceed the exposure limit and need to be rebaked, most carrier tape and shipping reels are not rated as bakeable at 125°C. If baking is required, devices may be baked according to section 4, table 4-1, column 8 of Joint Industry Standard IPC/JEDEC J-STD-033A. The following table provides useful information for carrier tape and reels used for shipping the devices described in this document. Reel Diameter Inch (mm) 7 (178) RFMD Part Number RF3163TR7 Hub Diameter Inch (mm) 2.4 (61) Width (mm) 12 Pocket Pitch (mm) 4 Feed Single Units per Reel 2500 QFN (Carrier Tape Drawing with Part Orientation) Notes: 1. All dimensions are in millimeters (mm). 2. Unless otherwise specified, all dimension tolerances per EIA-481. Ao = 3.18 ± 0.10 Bo = 3.18 ± 0.10 F = 5.50 ± 0.05 Ko = 1.02 ± 0.10 P = 4.00 ± 0.10 W = 12.00 +0.30/-0.10 4.00 ± 0.10 2.00 ± 0.05 Ø1.50±.10 1.75±0.10 0.279 ±.020 15 inch Trailer Sprocket holes toward rear of reel Pin 1 Location Top View 15 inch Leader F RF Part Number Trace Code RF Part Number Trace Code RF Part Number Trace Code RF Part Number Trace Code RF Part Number Trace Code RF Part Number Trace Code RF Part Number Trace Code W Bo P Ao Ko Direction of Feed Rev A5 060504 2-697 RF3163 2-698 Rev A5 060504
RF3163
1. 物料型号: - 型号:RF3163 - 描述:3V 900MHz线性功率放大器模块

2. 器件简介: - RF3163是一款专为3V手持系统设计的高功率、高效率线性放大器模块。该器件采用先进的第三代GaAs HBT工艺制造,用于3V IS-95/CDMA2000-1X/AMPS/W-CDMA手持数字移动通信设备中的最终RF放大器,适用于824MHz至849MHz频段。RF3163具有数字控制线,用于降低低功耗应用中的静态电流。RF3163采用16引脚、3mmx3mm的QFN封装。

3. 引脚分配: - 1: NC(无连接) - 2: VREG(放大器偏置电路的稳压电源) - 3: VMODE(高功率模式控制) - 4: RF IN(RF输入,内部匹配至50Ω) - 5: VCC1(第一阶段收集器供电) - 6-16: NC(无连接),Pkg Base(GND,接地连接)

4. 参数特性: - 输入内部匹配@50Ω - 输出内部匹配 - 28dBm线性输出功率 - CDMA峰值线性效率41% - -51dBc ACPR @ 885kHz - AMPS效率55%

5. 功能详解应用信息: - 应用包括3V CDMA/AMPS手机、3V CDMA2000/1XRTT手机、3V W-CDMA US-Cellular手机、3V CDMA2000/1X-EV-DO US-Cellular手机、扩展频谱系统等。

6. 封装信息: - 封装风格:QFN,16引脚,3x3mm。
RF3163 价格&库存

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