RF3165_06

RF3165 0 RoHS Compliant & Pb-Free Product Typical Applications • 3V W-CDMA Band 3, 4, and 9 Handsets • Multi-Mode W-CDMA 3G Handsets • Spread-Spectrum Systems 3V 1750MHZ W-CDMA LINEAR POWER AMPLIFIER MODULE Product Description The RF3165 is a high-power, high-efficiency linear amplifier module specifically designed for 3V handheld systems. The device is manufactured on an advanced third generation GaAs HBT process, and was designed for use as the final RF amplifier in 3V W-CDMA handheld digital cellular equipment, spread-spectrum systems, and other applications in the 1710MHz to 1785MHz band (Band 3). The RF3165 has a digital control line for low power applications to lower quiescent current. The RF3165 is assembled in at 16-pin, 3mmx3mm, QFN package. 3.00 Pin 1 ID A 1.45 Pin 1 ID 3.00 1.45 0.28 TYP 0.18 0.05 0.15 C 2 PLCS B 0.15 C 2 PLCS 0.40 TYP 0.20 0.10 M C A B 0.50 TYP Dimensions in mm. Shaded areas represent pin 1. 0.203 REF 0.08 C 0.08 C 0.925 0.775 0.102 REF C Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT VCCBIAS Package Style: QFN, 16-Pin, 3x3 GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS Features • Input/Output Internally Matched@50 Ω • 28dBm Linear Output Power • 42% Peak Linear Efficiency • 28dB Linear Gain • -41dBc ACLR @ ±5MHz VCC1/IM 16 15 14 13 RF IN 1 GND 2 VMODE 3 Bias VREG 4 NC IM 12 VCC2 11 VCC2 10 VCC2 9 RF OUT • HSDPA Capable Ordering Information RF3165 RF3165PCBA-410 3V 1750MHz W-CDMA Linear Power Amplifier Module Fully Assembled Evaluation Board Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 5 NC 6 NC 7 NC 8 NC RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Functional Block Diagram Rev A7 061201 2-1 RF3165 Absolute Maximum Ratings Parameter Supply Voltage (RF off) Supply Voltage (POUT ≤ 31dBm) Control Voltage (VREG) Input RF Power Mode Voltage (VMODE) Operating Temperature Storage Temperature Moisture Sensitivity Level IPC/JEDEC J-STD-20 Rating +8.0 +5.2 +3.9 +10 +3.9 -30 to +110 -40 to +150 MSL 2 @260 Unit V V V dBm V °C °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. RoHS marking based on EUDirective2002/95/EC (at time of this printing). However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter Specification Min. Typ. Max. Unit Condition T=25oC Ambient, VCCBIAS =3.4V, VCC =3.4V, VREG =2.8V, VMODE =0V, and POUT =28dBm for all parameters (unless otherwise specified). Modulation is 3GPP 3.2 03-00 DPCCH+1DPDCH. High Gain Mode (VMODE Low) Operating Frequency Range Linear Gain Harmonics Maximum Linear Output Linear Efficiency Maximum ICC ACLR1 @ ±5MHz ACLR2 @ ±10MHz Input VSWR Output VSWR Stability Noise Power 1710 28 -15 28 42 442 -41 -51 2:1 6:1 10:1 -146 -115 -144 -151 -156 -140 IM Products IM 5MHz IM 10MHz -41 -51 -31 -41 dBc dBc dBm/Hz dBm/Hz dBm/Hz dBm/Hz dBm/Hz dBm/Hz 1785 MHz dB dBm dBm % mA dBc dBc f=2fo, 3fo No oscillation>-70dBc No damage -50< POUT < +28dBm, RX=925MHz to 960MHz (Band 8) -50< POUT < +28dBm, RX=1805MHz to 1880MHz (Band 3 and 9) -50< POUT < +28dBm, RX=2110MHz to 2170MHz (Band 1 and 4) -50< POUT < +28dBm, RX=2400MHz to 2480MHz (Bluetooth) -50< POUT < +28dBm, RX=869MHz to 894MHz (Band 5 and 6) -50< POUT < +28dBm, RX=1930MHz to 1990MHz (Band 2) IF offset fO +5MHz with CW signal=-40dBc IF offset fO +10MHz with CW signal=-40dBc 2-2 Rev A7 061201 RF3165 Parameter Low Gain/Low VCC Mode (VMODE High) Operating Frequency Range Linear Gain Maximum Linear Output Linear Efficiency ACLR @ ±5MHz ACLR @ ±10MHz Maximum ICC Input VSWR Output VSWR Stability Ruggedness IM Products IM 5MHz IM 10MHz -41 -53 3.2 0.6 1.5 3.4 -31 -41 4.2 4.2 93 83 3 6 25 0.5 0.5 2.95 3.0 0.5 3.0 dBc dBc V V V mA mA mA uA uS uS uA V V V V V IF offset fO +5MHz with CW signal=-40dBc IF offset fO +10MHz with CW signal=-40dBc 1710 26 21.0 -40 -54 125 2:1 6:1 10:1 1785 MHz dB dBm % dBc dBc mA No oscillation>-65dBc No damage Specification Min. Typ. Max. Unit Condition T=25oC Ambient, VCCBIAS =3.4V, VCC =1.5V, VREG =2.8V, VMODE =2.8V, and POUT =16dBm for all parameters (unless otherwise specified). Modulation is 3GPP 3.2 03-00 DPCCH+1DPDCH. Power Supply Supply Voltage (VCC1 and VCC2) VCC Bias High Gain Idle Current (ICC1 /ICC2 /ICCBIAS) Low Gain Idle Current (ICC1 /ICC2 /ICCBIAS) VREG Current VMODE Current RF Turn On/Off Time DC Turn On/Off Time Total Current (Power Down) VREG Low Voltage (Power Down) VREG High Voltage (Recommended) VREG High Voltage (Operational) VMODE Voltage VMODE Voltage Low power with DC to DC Converter VMODE =low and VREG =2.8V, VCC =3.4V VMODE =high and VREG =2.8V, VCC =1.5V 70 60 1 250 1.2 2 0.2 0 2.75 2.7 0 2.0 2.8 High Gain Mode Low Gain Mode Rev A7 061201 2-3 RF3165 Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Pkg Base Function RF IN GND VMODE VREG NC NC NC NC RF OUT VCC2 VCC2 VCC2 NC IM VCC1/IM VCCBIAS GND Description RF input internally matched to 50 Ω. This input is internally AC-coupled. Ground connection. For nominal operation (High Power mode), VMODE is set LOW. When set HIGH, devices are biased lower to improve efficiency at lower output levels. Regulated voltage supply for amplifier bias circuit. In power down mode, both VREG and VMODE need to be LOW (