RF3165_1

RF3165_1

  • 厂商:

    RFMD(威讯)

  • 封装:

  • 描述:

    RF3165_1 - 3V 1750MHZ W-CDMA LINEAR POWER AMPLIFIER MODULE - RF Micro Devices

  • 详情介绍
  • 数据手册
  • 价格&库存
RF3165_1 数据手册
RF31653V 1750 MHz WCDMA Linear Power Amplifier Module RF3165 3V 1750MHZ W-CDMA LINEAR POWER AMPLIFIER MODULE RoHS Compliant & Pb-Free Product Package Style: QFN, 16-Pin, 3 x 3 VCCBIAS VCC1/IM Features Input/Output Internally Matched@50 Ω 28dBm Linear Output Power 42% Peak Linear Efficiency 28dB Linear Gain -41dBc ACLR @ ±5MHz HSDPA Capable VREG 4 RF IN 1 GND 2 VMODE 3 16 15 14 NC 13 IM 12 VCC2 11 VCC2 10 VCC2 Bias 9 RF OUT Applications 3 V W-CDMA Band 3, 4, and 9 Handsets Multi-Mode W-CDMA 3G Handsets Spread-Spectrum Systems 5 NC 6 NC 7 NC 8 NC Functional Block Diagram Product Description The RF3165 is a high-power, high-efficiency linear amplifier module specifically designed for 3V handheld systems. The device is manufactured on an advanced third generation GaAs HBT process, and was designed for use as the final RF amplifier in 3V W-CDMA handheld digital cellular equipment, spread-spectrum systems, and other applications in the 1710MHz to 1785MHz band (Band 3). The RF3165 has a digital control line for low power applications to lower quiescent current. The RF3165 is assembled in at 16-pin, 3mmx3mm, QFN package. Ordering Information RF3165 RF3165PCBA-410 3V 1750MHz W-CDMA Linear Power Amplifier Module Fully Assembled Evaluation Board Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Rev A7 DS061201 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 6 RF3165 Absolute Maximum Ratings Parameter Supply Voltage (RF off) Supply Voltage (POUT ≤ 31dBm) Control Voltage (VREG) Input RF Power Mode Voltage (VMODE) Operating Temperature Storage Temperature Moisture Sensitivity Level IPC/JEDEC J-STD-20 Rating +8.0 +5.2 +3.9 +10 +3.9 -30 to +110 -40 to +150 MSL 2 @260 Unit V V V dBm V °C °C °C Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Parameter Min. Specification Typ. Max. Unit Condition T=25oC Ambient, VCCBIAS =3.4V, VCC =3.4V, VREG =2.8V, VMODE =0V, and POUT =28dBm for all parameters (unless otherwise specified). Modulation is 3GPP 3.2 03-00 DPCCH+1DPDCH. High Gain Mode (VMODE Low) Operating Frequency Range Linear Gain Harmonics Maximum Linear Output Linear Efficiency Maximum ICC ACLR1 @ ±5MHz ACLR2 @ ±10MHz Input VSWR Output VSWR Stability Noise Power 1710 28 -15 28 42 442 -41 -51 2:1 1785 MHz dB dBm dBm % mA dBc dBc f=2fo, 3fo 6:1 10:1 -146 -115 -144 -151 -156 -140 dBm/Hz dBm/Hz dBm/Hz dBm/Hz dBm/Hz dBm/Hz No oscillation>-70dBc No damage -50< POUT < +28dBm, RX=925MHz to 960MHz (Band 8) -50< POUT < +28dBm, RX=1805MHz to 1880MHz (Band 3 and 9) -50< POUT < +28dBm, RX=2110MHz to 2170MHz (Band 1 and 4) -50< POUT < +28dBm, RX=2400MHz to 2480MHz (Bluetooth) -50< POUT < +28dBm, RX=869MHz to 894MHz (Band 5 and 6) -50< POUT < +28dBm, RX=1930MHz to 1990MHz (Band 2) IF offset fO +5MHz with CW signal=-40dBc IF offset fO +10MHz with CW signal=-40dBc IM Products IM 5MHz IM 10MHz -41 -51 -31 -41 dBc dBc 2 of 6 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A7 DS061201 RF3165 Parameter Low Gain/Low VCC Mode (VMODE High) Operating Frequency Range Linear Gain Maximum Linear Output Linear Efficiency ACLR @ ±5MHz ACLR @ ±10MHz Maximum ICC Input VSWR Output VSWR Stability Ruggedness IM Products IM 5MHz IM 10MHz -41 -53 3.2 0.6 VCC Bias High Gain Idle Current (ICC1 /ICC2 /ICCBIAS) Low Gain Idle Current (ICC1 /ICC2 /ICCBIAS) VREG Current VMODE Current RF Turn On/Off Time DC Turn On/Off Time Total Current (Power Down) VREG Low Voltage (Power Down) VREG High Voltage (Recommended) VREG High Voltage (Operational) VMODE Voltage VMODE Voltage 0 2.75 2.7 0 2.0 2.8 1.5 70 60 1 250 1.2 2 0.2 6 25 0.5 0.5 2.95 3.0 0.5 3.0 4.2 93 83 3 3.4 -31 -41 4.2 dBc dBc V V V mA mA mA uA uS uS uA V V V V V High Gain Mode Low Gain Mode VMODE =low and VREG =2.8V, VCC =3.4V VMODE =high and VREG =2.8V, VCC =1.5V Low power with DC to DC Converter IF offset fO +5MHz with CW signal=-40dBc IF offset fO +10MHz with CW signal=-40dBc 21.0 -40 -54 125 2:1 6:1 10:1 No oscillation>-65dBc No damage 1710 26 1785 MHz dB dBm % dBc dBc mA Min. Specification Typ. Max. Unit Condition T=25oC Ambient, VCCBIAS =3.4V, VCC =1.5V, VREG =2.8V, VMODE =2.8V, and POUT =16dBm for all parameters (unless otherwise specified). Modulation is 3GPP 3.2 03-00 DPCCH+1DPDCH. Power Supply Supply Voltage (VCC1 and VCC2) Rev A7 DS061201 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 3 of 6 RF3165 Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Pkg Base Function RF IN GND VMODE VREG NC NC NC NC RF OUT VCC2 VCC2 VCC2 NC IM VCC1/IM VCCBIAS GND Description RF input internally matched to 50 Ω. This input is internally AC-coupled. Ground connection. For nominal operation (High Power mode), VMODE is set LOW. When set HIGH, devices are biased lower to improve efficiency at lower output levels. Regulated voltage supply for amplifier bias circuit. In power down mode, both VREG and VMODE need to be LOW (
RF3165_1
### 物料型号 - 型号:RF3165 - 制造商:RFMD

### 器件简介 RF3165是一款高功率、高效率的线性功率放大器模块,专为3V手持系统设计。该器件采用先进的第三代GaAs HBT工艺制造,旨在用作3V W-CDMA手持数字移动通信设备、扩展频谱系统及其他1710MHz至1785MHz频段(Band 3)应用的最终RF放大器。RF3165具有数字控制线,用于降低低功耗应用中的静态电流。RF3165采用16引脚、3mm x 3mm的QFN封装。

### 引脚分配 1. RF IN:RF输入,内部匹配至50Ω,内部交流耦合。 2. GND:接地连接。 3. VMODE:标准操作(高功率模式)时,VMODE设为LOW。设为HIGH时,设备偏置较低,以提高低输出水平时的效率。 4. VREG:放大器偏置电路的调节电压供应。在省电模式下,VREG和VMODE都需要设为LOW(<0.5V)。 5-8. NC:无连接,不要连接到任何外部电路。 9. RF OUT:RF输出,内部交流耦合。 10-12. VCC2:输出级集电极供电,并与外部组件一起进行输出匹配。 13. NC:无连接,不要连接到任何外部电路。 14-15. IM/VCC1/IM:第一级集电极供电和级间匹配。 16. VCCBIAS:DC偏置电路的电源输入。

### 参数特性 - 工作频率范围:1710MHz至1785MHz - 线性增益:28dB - 最大线性输出功率:28dBm - 线性效率:42% - ACLR@±5MHz:-41dBc

### 功能详解 RF3165具有数字控制线,用于低功耗应用降低静态电流。在不同的输出功率要求下,可以通过匹配不同的外部组件来优化电路。

### 应用信息 - 3V W-CDMA Band 3、4和9手机 - 多模W-CDMA 3G手机 - 扩展频谱系统

### 封装信息 - 封装类型:QFN,16引脚,3 x 3mm
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