RF3189

RF3189 QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS/POWER AMPLIFIER MODULE Package Style: Module (5.00mmx5.00mmx1.00mm) 10 DCS RFOUT DCS RFIN 1 BAND SEL 2 Features         High Gain for use in Systems with Low RF Driver Power Typical GMSK Efficiency GSM850/900 48/53% DCS/PCS 50/53%      Integrated Power Control VBATT 4 VMODE 5 Auto VBATT Tracking Circuit avoids Switching Transients at Low Supply Voltage VRAMP / VBIAS 6 GSM RFIN 7 Low Power Mode for Reduced EDGE Current Digital Bias Control: Simple Implementation of Low Power Mode Integrated Power Flattening Circuit Reduces Power and Current into Mismatch Integrated VRAMP Rejection Filter Eliminates External Components Applications  TX EN 3 Linear EDGE and GSM Operation Quad-Band GSM/EDGE Handsets GSM/EDGE Transmitter Line-ups Portable Battery-Powered Equipment GSM850/EGSM900/DCS/ PCS Products GPRS Class 12 Compatible Products Mobile EDGE/GPRS Data Products 9 GSM RFOUT GND 8 Functional Block Diagram Product Description The RF3189 is a high power, high linearity performance in EDGE mode, dual-mode amplifier module with integrated power control. The input and output terminals are internally matched to 50. The amplifier devices are manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process, which is designed to operate either in saturated mode for GMSK signaling or linear mode for 8PSK signaling. The module is designed to be the final amplification stage in a dual-mode GSM/EDGE mobile transmit lineup operating in the 824MHz to 915MHz (low) and 1710MHz to 1910MHz (high) bands (such as a cellular handset). Band selection is controlled by an input on the module which selects either the low or high band. The device is packaged on a 5mmx5mm laminate module with a protective plastic over-mold. The RF3189 features RFMD’s latest integrated power flattening circuit, which significantly reduces current and power variation into load mismatch. The RF3189 provides excellent ESD protection at all the pins. The RF3189 also provides integrated VRAMP rejection filter which improves noise performance and transient spectrum. Ordering Information RF3189Quad-Band GSM/EDGE/GSM850/EGSM900 /DCS/PCS/Power Amplifier Module RF3189 RF3189PCBA-41X GaAs HBT GaAs MESFET InGaP HBT Quad-Band GSM/EDGE/GSM850/EGSM900 /DCS/PCS/Power Amplifier Module Power Amplifier Module, 5 Piece Sample Pack Fully Assembled Evaluation Board Optimum Technology Matching® Applied SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS LDMOS RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. DS100412 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 28 RF3189 Absolute Maximum Ratings Parameter Rating Unit Supply Voltage (VBATT) -0.5 to +6.0 V Power Control Voltage (VRAMP) -0.5 to +3.0 V Band Select 3.0 V TX Enable 3.0 V VMODE 3.0 V RF - Input Power 10.0 dBm 50 % Max Duty Cycle Output Load VSWR Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 10:1 Operating Temperature -30 to +85 °C Storage Temperature -55 to +150 °C Parameter Caution! ESD sensitive device. Min. Specification Typ. Max. Unit Condition Recommended Operating Conditions VRAMP/VBIAS VRAMP/VBIAS “High” 1.5 2.2 VRAMP/VBIAS “Low” 0 VRAMP/VBIAS Input Current VRAMP/VBIAS =VRAMP, MAX V High Power 8PSK Mode (VMODE =“High”) 0.7 V Low Power 8PSK Mode (VMODE =“High”) 40 A VRAMP/VBIAS =VRAMP,MAX V GMSK Mode (VMODE =“Low”), Analog Mode 0.25 V GMSK Mode (VMODE =“Low”), Analog Mode VMODE “HIGH” 1.5 V 8PSK Mode VMODE “LOW” 0 0.7 V GMSK Mode VMODE Input Current 1 +10 uA VRAMP/VBIAS =VRAMP, MIN 2.2 VMODE Switch Band Select Switch BAND_SEL “HIGH” 1.5 V High Band (DCS1800/PCS1900) BAND_SEL “LOW” 0 0.7 V Low Band (GSM850/EGSM900) BAND_SEL Input Current 1 +10 uA TX_EN TX_EN “HIGH” 1.5 V PA “ON” TX_EN “LOW” 0 0.7 V PA “OFF” TX_EN Input Current 1 +10 uA 4.5 V Performance specified 5.5 V Functional with performance degraded 10 uA TX_EN Low Overall Power Supply VBATT Range 3.2 3.6 3.0 Off Current RF Impedance LB_RF IN 50  LB_RF OUT 50  HB_RF IN 50  HB_RF OUT 50  2 of 28 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS100412 RF3189 Parameter Min. Specification Typ. Max. Unit Condition Nominal test conditions unless otherwise stated. Temp=25 °C, VBATT =3.6V, VMODE =“Low”, Freq=824MHz to 849MHz, 25% Duty Cycle, Pulse Width=1154s, PIN =2dBm, BAND_SEL=“Low”, TX_EN=“High”, VRAMP/VBIAS =VRAMP,MAX Cellular 850MHz Band GMSK Mode Operating Frequency Range 824 849 MHz +4 dBm -2 +1 Maximum Output Power 1 34.5 35.0 dBm Maximum Output Power 2 32.5 33 dBm 42 48 % Input Power Range, PIN Total Efficiency (PAE) Output Noise Power -83 Forward Isolation 1 Forward Isolation 2 Temp=25 °C, VBATT =3.6V Temp=85 °C, VBATT =3.2V Pin=+1dBm -82 dBm 869MHz to 894MHz, f0 =849MHz, POUT