RF3300-3

RF3300-3 0 Typical Applications • 3V CDMA US-PCS Handsets • 3V CDMA2000/1X PCS Handsets • Spread-Spectrum Systems Product Description The RF3300-3 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CDMA handheld digital cellular equipment, spreadspectrum systems, and other applications in the 1850MHz to 1910MHz band. The RF3300-3 has a digital control line for low power application to reduce the current drain. The device is self-contained with 50 Ω input and output that is matched to obtain optimum power, efficiency, and linearity characteristics. This amplifier contains a temperature compensating bias circuit for improved performance over temperature. 7.375 TYP 6.775 6.575 TYP 5.875 TYP 3V 1900MHz LINEAR AMPLIFIER MODULE • Designed for Compatibility with Qualcomm Chipsets 1.625 2.425 3.575 4.375 1 5.075 TYP 4.375 TYP NOTES: Nominal thickness, 1.55 mm. Note orientation of Pin 1. 3.575 TYP 2.875 TYP 2.075 TYP 0.925 TYP 0.125 TYP 0.000 0.125 TYP 0.925 TYP 5.075 TYP 5.875 TYP 0.000 1.750 4.250 Dimensions in mm. Bottom View Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS Package Style: Module (6mmx7.5mm) Features • Single 3V Supply with Internal VREF • Integrated Power Detector • 25dB Linear Gain • 40mA Idle Current (Low Power Mode) VMODE PA_ON VCC3 1 12 11 Pwr Det 10 PDET_OUT • Temperature Compensating Bias Circuit • Integrated PA Enable Switch GND 2 Bias 9 VCC2 GND 3 8 RF OUT Ordering Information RF IN 4 7 GND RF3300-3 3V 1900MHz Linear Amplifier Module RF3300-3 PCBA Fully Assembled Evaluation Board VCC1 5 6 GND RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Functional Block Diagram Rev A5 030612 2-547 RF3300-3 Absolute Maximum Ratings Parameter Supply Voltage (RF off) Supply Voltage (POUT ≤ 28dBm) Control Voltage (PA_ON) Mode Voltage (VMODE) Input RF Power Operating Case Temperature Storage Temperature Rating +8.0 +5.2 +3.6 +3.6 +10 -30 to +100 -30 to +150 Unit VDC VDC VDC VDC dBm °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter High Power State (VMODE Low) Frequency Range Linear Gain Second Harmonic Third Harmonic Maximum Linear Output Power (CDMA Modulation) Total Linear Efficiency Adjacent Channel Power Rejection Input VSWR Output VSWR Noise Power Specification Min. Typ. Max. Unit Condition Typical Performance at VCC =3.2V, PA_ON=High, TAMB =25°C, Frequency=1850MHz to 1910MHz (unless otherwise specified) 1850 24 1910 25 -45 -45 28 35 -47 -61 1.5:1 MHz dB dBc dBc dBm % dBc dBc POUT =28dBm ACPR@1.25MHz, POUT =28dBm ACPR@2.25MHz, POUT =28dBm No damage. No oscillations. >-70dBc At 80MHz offset. Typical Performance at VCC =3.2V, PA_ON=High, TAMB =25°C, Frequency=1850MHz to 1910MHz (unless otherwise specified) -46 -58 10:1 6:1 -141 dBm/Hz Low Power State (VMODE High) Frequency Range Linear Gain Second Harmonic Third Harmonic Maximum Linear Output Power (CDMA Modulation) Adjacent Channel Power Rejection Input VSWR Output VSWR 1850 17 1910 20 -45 -45 MHz dB dBc dBc dBm dBc dBc 16 -49 -64 2:1 -47 -59 10:1 6:1 ACPR@1.25MHz, POUT =16dBm ACPR@2.25MHz, POUT =16dBm No damage. No oscillations. >-70dBc 2-548 Rev A5 030612 RF3300-3 Parameter DC Supply Supply Voltage Quiescent Current PA_ON Current VMODE Current Turn On/Off Time 3.2 3.7 150 40 0.1 0.1 4.2 180 55 V mA mA µA µA µs Specification Min. Typ. Max. Unit TAMB =25oC VMODE =Low VMODE =High Condition