RF3315PCBA-411

RF3315 0 Typical Applications • Basestation Applications • Cellular and PCS Systems • WLL, W-CDMA Systems • Final PA for Low-Power Applications BROADBAND HIGH LINEARITY AMPLIFIER RoHS Compliant & Pb-Free Product Product Description The RF3315 is a high-efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier packaged in a low-cost surface-mount package. This amplifier is ideal for use in applications requiring high-linearity and low noise figure over the 300MHz to 3GHz frequency range. The RF3315 operates from a single 5V power supply. 1.04 0.80 0.50 0.30 1.60 1.40 3.10 2.90 0.48 0.36 2 PL 4.60 4.40 2.60 2.40 Shaded lead is pin 1. Dimensions in mm. 1.80 1.45 1.75 1.40 0.43 0.38 0.53 0.41 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS Package Style: SOT89 Features • 300MHz to 3GHz • +40dBm Output IP3 • 12.5dB Gain at 2.0GHz GND • +23dBm P1dB • 3.0dB Typical Noise Figure at 2.0GHz • Single 5V Power Supply 4 1 RF IN 2 GND 3 RF OUT Ordering Information RF3315 Broadband High Linearity Amplifier RF3315PCBA-410 Fully Assembled Evaluation Board (2GHz) RF3315PCBA-411 Fully Assembled Evaluation Board (900MHz) RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Functional Block Diagram Rev A10 050318 4-557 RF3315 Absolute Maximum Ratings Parameter RF Input Power Device Voltage Device Current Operating Temperature Storage Temperature Max. TJ (MTTF> 100years) Rating +20 -0.5 to +6.0 250 -40 to +85 -40 to +150 165 Unit dBm V mA °C °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. RoHS marking based on EUDirective2002/95/EC (at time of this printing). However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter Overall AC Specifications (2GHz) Frequency Gain (Small Signal) Input Return Loss Output Return Loss Output IP3 Output P1dB Noise Figure Specification Min. Typ. Max. Unit Condition VCC =5V, RFIN =-10dBm, Freq=2.0GHz, with 2GHz application schematic. 300 11.0 3000 12.5 15 15 +40.0 +23.0 3.0 +36 +21 4.0 MHz dB dB dB dBm dBm dB F=2GHz F=2GHz F=2GHz F1 = 1.99GHz, F2 =2.00GHz, PIN =-5dBm AC Specifications (900MHz) Frequency Gain (Small Signal) Input Return Loss Output Return Loss Output IP3 Output P1dB Noise Figure 300 16 3000 18 20 20 +41 +25 2.5 88 154 MHz dB dB dB dBm dBm dB °C/W °C VCC =5V, RFIN =-10dBm, Freq=900MHz, with 900MHz application schematic. +36 +23 F1 = 900MHz, F2 =901MHz, PIN =-10dBm 3.5 Thermal ThetaJC Maximum Measured Junction Temperature at DC Bias Conditions Mean Time To Failure ICC =150mA, PDISS =770mW. (See Note.) TCASE =+85°C TCASE =+85°C 370 years DC Specifications Device Voltage 4.5 5.0 5.5 V ICC =150mA Operating Current Range 100 150 170 mA VCC =5V Note: The RF3315 must be operated at or below 170mA to ensure the highest possible reliability and electrical performance. 4-558 Rev A10 050318 RF3315 Pin 1 Function RF IN Description RF input pin. This pin is not internally DC-blocked. A DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. Interface Schematic VCC RF IN 2 3 GND RF OUT Ground connection. RF output and bias pin. For biasing, an RF choke is needed. Because DC is present on this pin, a DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. See application schematic for configuration and value. VCC RF OUT 4 Pkg Base GND GND Ground connection. Ground connection. Rev A10 050318 4-559 RF3315 Typical Application Schematic for 2GHz VCC 4 100 pF + 1 μF + 100 pF + VCC 1 μF + 1 RF IN 100 pF 2 3 82 nH RF OUT 2.2 pF 1.5 pF 3.6 nH Evaluation Board Schematic for 2GHz P1 P1-1 1 2 VCC 4 C3 + 100 pF C4 + 1 μF VCC 1 μF 100 pF L1 82 nH C3 1.5 pF + + 3 CON3 VCC1 GND GND J1 RF IN 50 Ω μstrip C1 100 pF 1 2 3 50 Ω μstrip L2 3.6 nH J2 RF OUT C2 2.2 pF 4-560 Rev A10 050318 RF3315 Typical Application Schematic for 900MHz 4 VCC 100 pF 1 2 3 100 nH 1 μF + 4.7 pF RF IN 4.7 nH 6 pF RF OUT 8.7 nH Evaluation Board Schematic for 900MHz 4 VCC GND GND C1 4.7 pF L1 4.7 nH 1 2 3 L2 100 nH C3 100 pF VCC P1 P1-1 1 2 3 CON3 J1 RF IN + C4 1 μF C2 6 pF L3 8.7 nH J2 RF OUT Rev A10 050318 4-561 RF3315 Evaluation Board Layout for 1.9GHz Board Size 1.195” x 1.000” Board Thickness 0.033”, Board Material FR-4 Note: A small amount of ground inductance is required to achieve datasheet performance. The necessary inductance may be generated by ensuring that no ground vias are placed directly below the footprint of the part. Evaluation Board Layout for 900MHz Board Size 1.195” x 1.000” Board Thickness 0.033”, Board Material FR-4 Note: A small amount of ground inductance is required to achieve datasheet performance. The necessary inductance may be generated by ensuring that no ground vias are placed directly below the footprint of the part. 4-562 Rev A10 050318 RF3315 Gain versus Frequency Across Temperature, 15.0 14.0 13.0 12.0 11.0 10.0 9.0 8.0 7.0 6.0 OIP3 versus Frequency Across Temperature 44.0 43.0 42.0 41.0 40.0 39.0 38.0 37.0 36.0 VCC=5.0V (2GHz Application Frequency) VCC=5.0V (2GHz Application Frequency) OIP3 (dBm) Gain (dB) -40°C 25°C 85°C 35.0 -40°C 25°C 85°C 5.0 1750.0 1800.0 1850.0 1900.0 1950.0 2000.0 2050.0 2100.0 2150.0 2200.0 2250.0 34.0 1750.0 1800.0 1850.0 1900.0 1950.0 2000.0 2050.0 2100.0 2150.0 2200.0 2250.0 Frequency (MHz) Frequency (MHz) P1dB versus Frequency Across Temperature 26.0 25.0 24.0 23.0 -18.0 22.0 Reverse Isolation versus Frequency Across Temp -15.0 -16.0 -17.0 VCC=5.0V (2GHz Application Frequency) VCC=5.0V (2GHz Application Circuit) Isolation (dB) P1dB (dBm) -19.0 -20.0 -21.0 -22.0 -23.0 21.0 20.0 19.0 18.0 17.0 16.0 -40°C 25°C 85°C -24.0 -40°C 25°C 85°C 15.0 1750.0 1800.0 1850.0 1900.0 1950.0 2000.0 2050.0 2100.0 2150.0 2200.0 2250.0 -25.0 1750.0 1800.0 1850.0 1900.0 1950.0 2000.0 2050.0 2100.0 2150.0 2200.0 2250.0 Frequency (MHz) Frequency (MHz) Noise Figure versus Frequency Across Temperature 6.0 VCC=5.0V (2GHz Application Circuit) 5.0 Noise Figure (dB) 4.0 3.0 2.0 1.0 -40°C 25°C 85°C 0.0 1750.0 1800.0 1850.0 1900.0 1950.0 2000.0 2050.0 2100.0 2150.0 2200.0 2250.0 Frequency (MHz) Rev A10 050318 4-563 RF3315 Input VSWR versus Frequency Across Temperature, 2.4 Output VSWR versus Frequency Across Temperature, 2.4 VCC=5.0V (2GHz Application Circuit) VCC=5.0V (2GHz Application Circuit) 2.2 2.2 2.0 2.0 VSWR 1.6 VSWR 1.8 1.8 1.6 1.4 -40°C 25°C 85°C 1.4 -40°C 1.2 25°C 85°C 1.0 1750.0 1800.0 1850.0 1900.0 1950.0 2000.0 2050.0 2100.0 2150.0 2200.0 2250.0 1.2 1.0 1750.0 1800.0 1850.0 1900.0 1950.0 2000.0 2050.0 2100.0 2150.0 2200.0 2250.0 Frequency (MHz) Frequency (MHz) Gain versus Frequency Across Temperature, 20.0 19.0 45.0 18.0 17.0 42.0 OIP3 versus Frequency Across Temperature 48.0 VCC=5.0V (900MHz Application Circuit) VCC=5.0V (900MHz Application Circuit) OIP3 (dBm) Gain (dB) 16.0 15.0 14.0 13.0 12.0 11.0 10.0 700.0 750.0 800.0 850.0 900.0 950.0 1000.0 1050.0 -40°C 25°C 85°C 39.0 36.0 33.0 30.0 -40°C 25°C 85°C 750.0 800.0 850.0 900.0 950.0 1000.0 1050.0 27.0 700.0 Frequency (MHz) Frequency (MHz) P1dB versus Frequency Across Temperature 28.0 27.0 26.0 -15.0 25.0 Reverse Isolation versus Frequency Across Temp, -10.0 VCC=5.0 (900MHz Application Circuit) VCC=5.0V (900MHz Application Circuit) P1dB (dBm) 24.0 23.0 22.0 21.0 20.0 19.0 18.0 700.0 750.0 800.0 850.0 900.0 950.0 1000.0 1050.0 -40°C 25°C 85°C Reverse Isolation (dB) -20.0 -25.0 -40°C 25°C 85°C -30.0 700.0 750.0 800.0 850.0 900.0 950.0 1000.0 1050.0 Frequency (MHz) Frequency (MHz) 4-564 Rev A10 050318 RF3315 Noise Figure versus Frequency Across Temperature 7.0 Input VSWR versus Frequency Across Temperature 3.5 VCC=5.0V (900MHz Application Circuit) VCC=5.0V (900MHz Application Circuit) 6.0 3.0 5.0 Noise Figure (dB) 3.0 VSWR 2.0 1.5 -40°C 25°C 85°C 1.0 750.0 800.0 850.0 900.0 950.0 1000.0 1050.0 700.0 750.0 800.0 850.0 900.0 950.0 1000.0 1050.0 4.0 2.5 2.0 1.0 -40°C 25°C 85°C 0.0 700.0 Frequency (MHz) Frequency (MHz) Output VSWR versus Frequency Across Temperature, 3.5 ICC versus VCC Across Temperature 200.0 VCC=5.0V (900MHz Application Circuit) 180.0 3.0 160.0 2.5 ICC (mA) 2.0 1.5 -40°C 25°C 85°C 1.0 700.0 750.0 800.0 850.0 900.0 950.0 1000.0 1050.0 VSWR 140.0 120.0 100.0 80.0 -40°C 25°C 85°C 3.0 3.5 4.0 4.5 5.0 5.5 6.0 60.0 Frequency (MHz) VCC (V) MTTF versus Junction Temperature, (60% Confidence Interval) 1000000.0 100000.0 10000.0 MTTF (Years) 1000.0 100.0 10.0 1.0 100.0 125.0 150.0 175.0 200.0 Junction Temperature (°C) Rev A10 050318 4-565 RF3315 S11 1.0 0.6 2.0 S22 0.6 Swp Max 3GHz 1.0 Swp Max 3GHz 2.0 3 GHz 3.0 0.8 0. 4 0.8 0. 4 3.0 4. 0 5.0 0.2 0.2 4.0 5.0 10.0 3 GHz 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 10.0 300 MHz 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 300 MHz 0 0 -10.0 -0.2 -5.0 -0.2 -5.0 .4 -0 .4 -0 .0 -2 -0 . 6 Swp Min 0.3GHz -0 . 6 .0 -2 Swp Min 0.3GHz -0.8 -1.0 -0.8 4-566 -1.0 Rev A10 050318 -10.0 -4 . 0 -3 .0 -4. 0 -3 .0 RF3315 PCB Design Requirements PCB Surface Finish The PCB surface finish used for RFMD’s qualification process is electroless nickel, immersion gold. Typical thickness is 3 μinch to 8 μinch gold over 180 μinch nickel. PCB Land Pattern Recommendation PCB land patterns are based on IPC-SM-782 standards when possible. The pad pattern shown has been developed and tested for optimized assembly at RFMD; however, it may require some modifications to address company specific assembly processes. The PCB land pattern has been developed to accommodate lead and package tolerances. PCB Metal Land Pattern A = 1.27 x 0.86 (mm) Typ. Dimensions in mm. Pin 1 A 3.43 2.79 2.34 1.48 1.02 0.43 A 0.03 0.66 Typ. 1.88 Typ. 5.36 Figure 1. PCB Metal Land Pattern (Top View) Rev A10 050318 4-567 RF3315 PCB Solder Mask Pattern Liquid Photo-Imageable (LPI) solder mask is recommended. The solder mask footprint will match what is shown for the PCB metal land pattern with a 2mil to 3mil expansion to accommodate solder mask registration clearance around all pads. The center-grounding pad shall also have a solder mask clearance. Expansion of the pads to create solder mask clearance can be provided in the master data or requested from the PCB fabrication supplier. A = 1.37 x 0.96 (mm) Typ. Dimensions in mm. Pin 1 A 3.48 2.89 2.44 1.48 1.02 0.48 A 0.03 0.72 Typ. 1.88 Typ. 5.46 Figure 2. PCB Solder Mask Pattern (Top View) Thermal Pad and Via Design Thermal vias are required in the PCB layout to effectively conduct heat away from the package. The via pattern has been designed to address thermal, power dissipation and electrical requirements of the device as well as accommodating routing strategies. The via pattern used for the RFMD qualification is based on thru-hole vias with 0.203mm to 0.330mm finished hole size on a 0.5mm to 1.2mm grid pattern with 0.025mm plating on via walls. If micro vias are used in a design, it is suggested that the quantity of vias be increased by a 4:1 ratio to achieve similar results. 4-568 Rev A10 050318