RF3375TR7

DRAFT RF3375 DRAFT RF3375General Purpose Amplifier GENERAL PURPOSE AMPLIFIER Package Style: SOT89 GND NOT FOR NEW DESIGNS Features  +28dBm Output IP3  +16.0dBm Output P1dB RF IN 1 Applications  Basestation Applications Broadband, Low-Noise Gain Blocks 2 3 S 13.2dB Small Signal Gain RF OUT   4 Internally Matched Input and Output GND  DC to >6000MHz Operation DE SI GN  Functional Block Diagram  IF or RF Buffer Amplifiers  Driver Stage for Power Amplifiers Product Description Final PA for Low-Power Applications The RF3375 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 6000MHz. The device is self-contained with 50 input and output impedances and requires only two external DCbiasing elements to operate as specified. High Reliability Applications NO T FO R  NE W  Ordering Information RF3375 RF337XPCBA-41X GaAs HBT GaAs MESFET InGaP HBT DRAFT General Purpose Amplifier Fully Assembled Evaluation Board Optimum Technology Matching® Applied SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS LDMOS DRAFT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. DS101122 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 7 DRAFT RF3375 DRAFT Absolute Maximum Ratings Parameter Input RF Power Rating Unit +13 dBm Operating Ambient Temperature -40 to +85 °C Storage Temperature -60 to +150 °C 80 mA ICC Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Parameter Min. Specification Typ. Max. Unit Overall Condition 3dB Bandwidth Gain 12.2 DC to >6000 MHz 6 GHz 13.5 dB 13.5 dB Freq=500MHz 13.2 dB Freq=2000MHz 13.2 dB Freq=3000MHz DE SI GN Frequency Range S T=25 °C, ICC =65mA (See Note 1.) 13.0 Freq=1000MHz Freq=4000MHz 12.4 Freq=6000MHz Noise Figure 4.6 Input VSWR