RF3375_06

RF3375 0 RoHS Compliant & Pb-Free Product Typical Applications • Basestation Applications • Broadband, Low-Noise Gain Blocks • IF or RF Buffer Amplifiers Product Description The RF3375 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 Ω gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 6000MHz. The device is self-contained with 50 Ω input and output impedances and requires only two external DC-biasing elements to operate as specified. 1.04 0.80 0.50 0.30 1.60 1.40 GENERAL PURPOSE AMPLIFIER • Driver Stage for Power Amplifiers • Final PA for Low-Power Applications • High Reliability Applications 3.10 2.90 0.48 0.36 2 PL 4.60 4.40 2.60 2.40 Shaded lead is pin 1. Dimensions in mm. 1.80 1.45 1.75 1.40 0.43 0.38 0.53 0.41 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS Package Style: SOT89 Features • DC to >6000MHz Operation • Internally Matched Input and Output • 13.2dB Small Signal Gain • +28dBm Output IP3 • +16.0dBm Output P1dB 1 RF IN GND 4 2 GND 3 RF OUT Ordering Information RF3375 General Purpose Amplifier RF337XPCBA-41XFully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A7 050524 4-591 RF3375 Absolute Maximum Ratings Parameter Input RF Power Operating Ambient Temperature Storage Temperature ICC Rating +13 -40 to +85 -60 to +150 80 Unit dBm °C °C mA Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. RoHS marking based on EUDirective2002/95/EC (at time of this printing). However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter Overall Frequency Range 3dB Bandwidth Gain Specification Min. Typ. Max. DC to >6000 6 13.5 13.5 13.2 13.2 13.0 12.4 4.6