RF3376

RF3376General Purpose Amplifier RF3376 GENERAL PURPOSE AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: SOT89 Features DC to >6000MHz Operation Internally Matched Input and Output 22dB Small Signal Gain +2.0dB Noise Figure +11dBm Output P1dB 1 RF IN GND 4 2 GND 3 RF OUT GaAs pHEMT Si CMOS Si BJT Applications Basestation Applications Broadband, Low-Noise Gain Blocks IF or RF Buffer Amplifiers Driver Stage for Power Amplifiers Final PA for Low-Power Applications High Reliability Applications Functional Block Diagram Product Description The RF3376 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 Ω gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 6000MHz. The device is self-contained with 50 Ω input and output impedances and requires only two external DCbiasing elements to operate as specified. Ordering Information RF3376 RF3376PCBA-410 General Purpose Amplifier Fully Assembled Evaluation Board Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Rev A6 DS050524 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 8 RF3376 Absolute Maximum Ratings Parameter Input RF Power Operating Ambient Temperature Storage Temperature ICC Rating +3 -40 to +85 -60 to +150 40 Unit dBm °C °C mA Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Parameter Overall Frequency Range 3dB Bandwidth Gain Min. Specification Typ. DC to >6000 2 Max. Unit MHz GHz dB dB dB dB Freq=500MHz Freq=1000MHz Freq=2000MHz Freq=3000MHz Freq=4000MHz Freq=6000MHz dB Freq=2000MHz Condition T=25 °C, ICC =35mA (See Note 1.) 22.0 21.0 18.0 23.5 22.5 19.8 18.0 16.0 12.8 Noise Figure Input VSWR Output VSWR Output IP3 Output P1dB Reverse Isolation +22.0 +21.5 +9.5 +9.5 2.0