RF3376TR13

RF3376 RF3376General Purpose Amplifier General Purpose Amplifier Package Style: SOT8 Features GND Internally Matched Input and Output 22dB Small Signal Gain  +2.0dB Noise Figure  +11dBm Output P1dB  Useable with 5V Supply 4 Applications   Basestation Applications Broadband, Low-Noise Gain Blocks  IF or RF Buffer Amplifiers  Driver Stage for Power Amplifiers   Final PA for Low-Power Applications 1 2 3 RF OUT  GND  DC to >6000MHz Operation RF IN  Functional Block Diagram Product Description High Reliability Applications The RF3376 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 6000MHz. The device is self-contained with 50 input and output impedances and requires only two external DCbiasing elements to operate as specified. Ordering Information RF3376 RF3376SR RF3376TR13 RF3376PCK-410 Sample bag with 25 pieces 7” reel with 100 pieces 13” reel with 2500 pieces 0MHz to 6000MHz PCBA with 5-piece sample bag RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc. DS121109 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. 1 of 7 RF3376 Absolute Maximum Ratings Parameter Input RF Power Rating Unit +3 dBm Operating Ambient Temperature -40 to +85 °C Storage Temperature -60 to +150 °C 50 mA ICC Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No Parameter Min. Specification Typ. Max. Unit Overall Condition T=25 °C, ICC =35mA (See Note 1.) Frequency Range 3dB Bandwidth Gain 18.0 DC to >6000 MHz 2 GHz 23.5 dB 22.5 dB Freq=1000MHz 19.8 dB Freq=2000MHz 18.0 dB Freq=3000MHz 16.0 Freq=4000MHz 12.8 Noise Figure 2.0 Input VSWR