RF3396_06

RF3396 0 RoHS Compliant & Pb-Free Product Typical Applications • Basestation Applications • Broadband, Low-Noise Gain Blocks • IF or RF Buffer Amplifiers Product Description The RF3396 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 Ω gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 6000MHz. The device is self-contained with 50 Ω input and output impedances and requires only two external DC-biasing elements to operate as specified. The device is designed for cost effective high reliability in a plastic package. The 3mmx3mm footprint is compatible with standard ceramic and plastic Micro-X packages. 2 PLCS 0.10 C A GENERAL PURPOSE AMPLIFIER • Driver Stage for Power Amplifiers • Final PA for Low-Power Applications • High Reliability Applications 0.05 C -A3 1 3.00 2 PLCS 0.10 C B 0.20 REF. 0.90 0.85 0.05 0.00 3.00 0.10 C B 2 PLCS 12° MAX SEATING PLANE 0.10 C A 2 PLCS 2.75 SQ -B- Dimensions in mm. -C- Shaded lead is pin 1. 0.10 M C A B 0.60 0.24 TYP 0.35 0.30 PIN 1 ID R0.20 1.90 1.60 0.45 0.35 0.375 0.275 1.15 0.85 0.65 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS Package Style: QFN, 12-Pin, 3x3 Features • DC to >6000MHz Operation • Internally Matched Input and Output • 22dB Small Signal Gain GND GND GND • +2.0dB Noise Figure • +11.5dBm Output P1dB 9 NC 8 RF OUT 7 NC 12 NC 1 RF IN 2 NC 3 4 GND 11 10 • Footprint Compatible with Micro-X 5 GND 6 GND Ordering Information RF3396 General Purpose Amplifier RF3396PCBA-41X Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A7 060907 4-599 RF3396 Absolute Maximum Ratings Parameter Input RF Power Operating Ambient Temperature Storage Temperature ICC Rating +3 -40 to +85 -60 to +150 40 Unit dBm °C °C mA Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. RoHS marking based on EUDirective2002/95/EC (at time of this printing). However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter Overall Frequency Range 3dB Bandwidth Gain Specification Min. Typ. Max. DC to >6000 2 22.7 22.2 19.8 17.4 16.0 12.9 2.0